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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R8-40YSDX

Name: PSMN2R8-40YSDX
Brand: Nexperia USA Inc.
SKU: PSMN2R8-40YSDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R8-40YSDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN2R8-40YSDX.pdf

Description:: MOSFET N-CH 40V 160A LFPAK56

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Product details

Overview

PSMN2R8-40YSD from Nexperia is an N-channel standard-level MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V and 25 A, 160 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It employs NextPower-S3 Schottky-Plus technology for soft-recovery body diode operation and is designed for high-efficiency power switching in DC-DC converters and synchronous rectification.

For engineers reviewing the PSMN2R8-40YSD datasheet, PSMN2R8-40YSD pinout, PSMN2R8-40YSD application, or PSMN2R8-40YSD equivalent, key selection criteria include its 2.8 mΩ on-resistance at 10 V gate drive, 150 A avalanche rating, 7 nC typical Q_GD, 44 nC typical Q_G(tot), and LFPAK56 thermal performance with 0.92 K/W R_th(j-mb).

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with copper-clip die attach and solder die bonding in a 4-terminal LFPAK56 package. Its Schottky-Plus body diode delivers low V_SD (0.8 V typ. at 25 A), soft reverse recovery (t_rr = 29 ns), and low Q_r (23 nC), enabling high-frequency hard-switching and ZVS topologies.

The device features strong linear-mode SOA up to 100 ms at 40 V, 100% tested unclamped avalanche capability (E_AS = 452 mJ), and gate threshold voltage of 3.1 V (typ.) with -6.4 mV/K temperature coefficient - supporting robust gate drive margin in thermally demanding environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - supports 36 V nominal bus systems with 10 % margin for transients.
R_DS(on)	2.8 mΩ max at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.8 W conduction loss at 80 A in optimized PCB layout.
I_D(cont)	160 A at T_mb = 25 °C - validated under application conditions; limited by thermal design in practice.
Q_G(tot)	44 nC typical - reduces gate driver power requirement and enables fast 10–20 ns switching transitions.
Q_GD	7 nC typical - minimizes Miller-induced shoot-through risk and improves hard-switching EMI profile.
t_rr	29 ns typical - ensures clean turn-off in synchronous rectifiers without voltage spikes or cross-conduction.
R_th(j-mb)	0.92 K/W typical - allows >100 W dissipation with 100 K rise from mounting base to junction.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with exposed copper mounting base connected to drain, three source terminals (Pins 1–3), and one gate terminal (Pin 4). The copper-clip construction and solder die attach deliver low parasitic inductance (<1.5 nH) and resistance, while exposed leads support wave soldering and visual solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel source connections reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate	Single gate input with 0.7 Ω typical gate resistance - compatible with standard 5–10 V logic-level drivers.
Mounting Base (mb)	Drain	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return node.

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft recovery (t_a/t_b = 16/13 ns), low Q_r (23 nC), and V_SD = 0.8 V @ 25 A - eliminates snubbers in synchronous rectifiers.
Avalanche ruggedness	100 % tested at I_AS = 150 A - ensures reliability under inductive load switching and fault conditions without derating.
Thermal robustness	175 °C rated junction temperature and 0.92 K/W R_th(j-mb) - supports compact thermal design in space-constrained industrial and automotive-adjacent systems.
Low dynamic losses	Q_G(tot) = 44 nC, Q_GD = 7 nC, C_iss = 3219 pF - enables >500 kHz operation in LLC and phase-shifted full-bridge converters.

Applications

High-Performance Synchronous Rectification

DC-to-DC Converters

Use Scenario: Secondary-side switching in 48 V–12 V isolated buck-derived converters for server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %.

Use Value: 2.8 mΩ R_DS(on) and soft-recovery body diode eliminate reverse-recovery losses and enable zero-voltage switching at 300–600 kHz.

Use Scenario: High-current step-down conversion in industrial PLC power modules and battery-powered test equipment.

IC Role / Device Role / Timing Role: Main switch in 30–100 A buck regulators operating at 200–500 kHz with forced-air or heatsink cooling.

Use Value: 160 A continuous rating and 0.92 K/W thermal resistance allow stable operation at 80–100 A with <60 K temperature rise on 25 mm² copper area.

Brushless DC Motor Control

Battery Protection

Use Scenario: Half-bridge leg in 24–48 V BLDC inverters for e-bikes, power tools, and HVAC blowers.

IC Role / Device Role / Timing Role: High-side or low-side switching element handling PWM commutation with peak currents up to 658 A (pulsed).

Use Value: Strong SOA and 150 A avalanche rating withstand motor stall and regenerative braking energy without external clamping.

Use Scenario: Primary protection FET in smart battery packs for laptops and portable medical devices (12–24 V, 10–30 A).

IC Role / Device Role / Timing Role: Load switch and overcurrent cutoff device controlled by battery management ICs.

Use Value: Low 2.8 mΩ on-resistance minimizes voltage drop during normal operation; 175 °C rating ensures reliability during short-circuit shutdown events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP023N04L	2.3 mΩ R_DS(on) but higher Q_G(tot) (55 nC), TO-252 package, no Schottky-Plus diode.	Lacks soft-recovery diode - requires external snubber in synchronous rectification; lower thermal resistance to ambient but higher R_th(j-mb).	Preferred where lowest conduction loss dominates and diode recovery is managed externally.
Vishay SiR626DP	2.6 mΩ R_DS(on), 40 nC Q_G(tot), PowerPAK SO-8 package, standard body diode.	Higher t_rr (60 ns) and Q_r (52 nC) - increases switching loss and EMI in high-frequency sync rectifiers.	Suitable for cost-sensitive DC-DC where efficiency >94 % is acceptable and layout space permits larger heatsinking.

Compared with IPP023N04L and SiR626DP, PSMN2R8-40YSD offers superior diode softness and lower Q_GD, making it optimal for high-frequency synchronous rectification and motor control where EMI and dv/dt stress must be minimized - despite slightly higher R_DS(on) than IPP023N04L.

Availability

PSMN2R8-40YSD is available at Aetrix Electronics and suitable for high-current DC-DC converters, synchronous rectifiers, BLDC motor drives, and battery protection circuits requiring stable component supply across production lifecycles.

Supply support for PSMN2R8-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This part belongs to Nexperia's NextPower-S3 portfolio - engineered specifically for high-efficiency, high-power-density switching applications where low R_DS(on), fast soft-recovery diodes, and robust thermal performance are critical.

FAQ

What is the maximum continuous drain current for PSMN2R8-40YSD under real-world PCB conditions?

The datasheet specifies 160 A at T_mb = 25 °C with sufficient copper area (25.4 mm square, 70 µm thick FR4). In practice, sustained current is limited by thermal design: at T_mb = 100 °C, continuous I_D drops to 119 A. For reliable operation above 80 A, a 4-layer board with ≥100 mm² 2 oz copper on drain and source layers is recommended.

Does PSMN2R8-40YSD require gate resistors for safe paralleling?

Yes - gate resistors (typically 2.2–4.7 Ω) are required when paralleling multiple units to ensure balanced turn-on/turn-off and prevent current hogging. The device's 0.7 Ω typical gate resistance and low Q_GD make it well-suited for paralleling, but mismatched layout inductance can cause dynamic imbalance without individual gate damping.

Can PSMN2R8-40YSD replace a standard Schottky diode in a 48 V synchronous rectifier?

Yes - its Schottky-Plus body diode (V_SD = 0.8 V @ 25 A, t_rr = 29 ns) outperforms most 45 V Schottky diodes in forward voltage and reverse recovery. When actively driven as a synchronous rectifier, conduction loss drops significantly versus passive diodes - especially above 10 A - while eliminating reverse-recovery spikes.

Is PSMN2R8-40YSD qualified for automotive applications?

No - this part is not AEC-Q101 qualified and is intended for industrial, computing, and consumer applications. Nexperia offers automotive-qualified variants (e.g., PSMN2R8-40YLH) with extended temperature screening and PPAP documentation, but PSMN2R8-40YSD lacks those qualifications and should not be used in safety-critical automotive systems.

PSMN2R8-40YSDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4507 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R8-40YSDX FAQ

1.How can I place an order for PSMN2R8-40YSDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R8-40YSDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R8-40YSDX reliable?

The price and inventory of PSMN2R8-40YSDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R8-40YSDX is usually 5 days.

3.What payment methods are accepted for PSMN2R8-40YSDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R8-40YSDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R8-40YSDX?

PSMN2R8-40YSDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R8-40YSDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R8-40YSDX?

For technical support, including PSMN2R8-40YSDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R8-40YSDX requirements.

6.How does Aetrix verify that PSMN2R8-40YSDX is sourced from the original manufacturer or authorized distributors?

All PSMN2R8-40YSDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R8-40YSDX meets industry standards.

7.What is the process for return or replacement of PSMN2R8-40YSDX?

All PSMN2R8-40YSDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R8-40YSDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R8-40YSDX part is unused and in its original packaging.

Return procedure for PSMN2R8-40YSDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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