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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R8-80SSFJ

Name: PSMN2R8-80SSFJ
Brand: Nexperia USA Inc.
SKU: PSMN2R8-80SSFJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN2R8-80SSFJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1235

Datasheet:: PSMN2R8-80SSFJ.pdf

Description:: NEXTPOWER 80/100V MOSFETS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN2R8-80SSF from Nexperia is an N-channel NextPower 80 V MOSFET in LFPAK88 (SOT1235) package, rated for 205 A continuous drain current at T_mb = 25 °C, with R_DS(on) = 2.2–2.8 mΩ at V_GS = 10 V and T_j = 25 °C, qualified to 175 °C junction temperature, and used as a primary-side switch or synchronous rectifier in high-current DC-DC converters.

For engineers reviewing the PSMN2R8-80SSF datasheet, PSMN2R8-80SSF pinout, PSMN2R8-80SSF application, or PSMN2R8-80SSF equivalent, this page delivers verified electrical parameters, thermal resistance (R_th(j-mb) = 0.36–0.44 K/W), avalanche energy rating (E_AS = 482 mJ), gate charge profile (Q_G(tot) = 47–143 nC), and LFPAK88 mounting-base thermal interface details critical for high-power switching design validation.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low Q_G × R_DS(on) figure-of-merit (FOM), enabling high-efficiency hard-switching in industrial power supplies and motor drives. Its 80 V V_DS rating supports 48 V bus architectures with margin, while its 100% tested avalanche ruggedness ensures robustness under unclamped inductive switching.

The device features a source-connected triple-pin configuration (Pins 2–4) and drain-connected mounting base (Pin mb), delivering low-inductance, high-current conduction paths. Its gate threshold voltage (V_GS(th) = 2–4 V, typ. 3 V) enables standard 10 V gate drive compatibility without requiring level-shifting circuitry in most half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V maximum drain-source voltage - supports 48 V systems with ≥66% overvoltage margin for transient suppression.
R_DS(on)	2.2–2.8 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 205 A, critical for thermally constrained PCB layouts.
I_D	205 A continuous drain current at T_mb = 25 °C - validated for sustained operation in high-current synchronous rectification and BLDC phase legs.
Q_G(tot)	47–143 nC total gate charge - determines driver power requirement and switching speed trade-off in 100–500 kHz SMPS designs.
E_AS	482 mJ non-repetitive avalanche energy - provides fault tolerance during short-circuit events without external snubbers in full-bridge inverters.
R_th(j-mb)	0.36–0.44 K/W junction-to-mounting-base thermal resistance - enables direct thermal coupling to heatsinks or copper planes for >300 W dissipation capability.
Q_RR	42 nC recovered charge - reduces diode reverse recovery losses and EMI in synchronous rectifier applications versus standard MOSFETs.

Pinout & Package

LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package with 8 mm × 8 mm × 1.6 mm body, featuring a large exposed copper mounting base (Pin mb) electrically connected to the drain for low-inductance, high-current thermal and electrical path. The package uses 2 mm pitch leads and is optimized for reflow soldering on 70 µm copper FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate terminal - accepts standard 10 V logic-level drive; RG = 0.6–2.4 Ω internal gate resistance limits ringing.
2, 3, 4	S	Source terminals - parallel connection reduces source inductance and improves current sharing in high-di/dt switching.
mb	D	Mounting base (drain) - primary thermal path and high-current drain return; requires soldered thermal pad to PCB copper plane.

Key Features

Feature	Design Value
Low Q_RR	42 nC - cuts reverse recovery losses by >40% vs. legacy MOSFETs, reducing heat generation and EMI in synchronous rectifiers.
Avalanche-rated & 100% tested	482 mJ E_AS - eliminates need for external clamping circuits in motor control and UPS inverters subjected to load dump or shoot-through faults.
Triple-source pin configuration	Pins 2–4 tied to source - lowers effective source inductance by ~3×, improving gate control stability and dV/dt immunity in fast-switching bridges.
LFPAK88 thermal performance	R_th(j-mb) = 0.36 K/W - enables 341 W total power dissipation at T_mb = 25 °C, supporting compact, fanless industrial power modules.
High-temperature qualification	175 °C T_j max - allows operation in sealed enclosures or high-ambient environments (e.g., EV charging stations, solar inverters).

Applications

AC-to-DC Synchronous Rectifier

Primary-Side Switch in Isolated DC-DC

Use Scenario: Secondary-side rectification in 1–3 kW telecom and server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 2.8 mΩ R_DS(on) and 42 nC Q_RR cut rectifier losses by 30–50% versus 40 V Schottky alternatives, enabling higher power density.

Use Scenario: Primary-side high-side switch in 600–1200 W LLC resonant converters for data center power supplies.

IC Role / Device Role / Timing Role: Fast-switching, high-current primary switch handling 205 A peak currents during resonant transitions.

Use Value: 143 nC Q_G(tot) and 0.44 K/W R_th(j-mb) support stable 200 kHz operation with minimal gate drive loss and thermal derating.

BLDC Motor Phase Leg

Battery Protection Circuit

Use Scenario: High-power 3-phase inverter driving 5–10 kW industrial BLDC motors in HVAC compressors or traction systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated source sensing and fast turn-off for precise PWM commutation.

Use Value: Triple-source pins and 940 A pulsed IDM enable 10× overload current handling during motor startup without thermal runaway.

Use Scenario: Main discharge/charge FET in 48 V Li-ion battery packs for e-bikes and energy storage systems.

IC Role / Device Role / Timing Role: Bidirectional current-handling protection switch with avalanche energy absorption during cell imbalance faults.

Use Value: 482 mJ E_AS and 175 °C T_j rating allow safe operation during 100 ms short-circuit events without fuse activation or thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 80 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N	R_DS(on) = 2.6 mΩ (typ.), Q_G(tot) = 120 nC, TO-220FP package, R_th(j-case) = 1.2 K/W	Larger footprint, higher thermal resistance, no triple-source pins - less suitable for ultra-low-inductance PCB layouts.	Select when legacy through-hole assembly or lower gate charge sensitivity is prioritized over thermal performance.
Vishay SiR626DP	R_DS(on) = 2.7 mΩ (typ.), Q_G(tot) = 105 nC, PowerPAK 8x8 package, R_th(j-mb) = 0.55 K/W	Higher thermal resistance than LFPAK88, no 100% avalanche test, lower E_AS (320 mJ)	Choose where cost is critical and avalanche stress is mitigated by system-level protection.

Compared with IPP026N08N and SiR626DP, PSMN2R8-80SSF delivers superior thermal interface (0.36 K/W), lower Q_RR, and guaranteed avalanche ruggedness - making it optimal for space-constrained, high-reliability industrial switching where board-level thermal management and fault tolerance are design-critical.

Availability

PSMN2R8-80SSF is available at Aetrix Electronics and suitable for high-current DC-DC converters, BLDC motor drives, and battery protection systems requiring stable component supply across extended production lifecycles.

Supply support for PSMN2R8-80SSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

This part belongs to the NextPower series - engineered specifically for high-efficiency, high-current switching in industrial power conversion, emphasizing low R_DS(on), robust avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current for PSMN2R8-80SSF at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 166 A per the datasheet Fig. 2. This reflects thermal limitations of the PCB copper area and ambient conditions, not device failure - actual current must be validated against measured T_j using R_th(j-mb) = 0.44 K/W and power loss calculations.

Is PSMN2R8-80SSF suitable for use in automotive applications?

No - this device is not AEC-Q101 qualified and is explicitly designated for industrial and consumer applications per the datasheet General Description. It lacks automotive-grade screening, qualification testing, and guaranteed PPAP documentation required for automotive ECUs or powertrain systems.

How does the LFPAK88 package improve thermal performance compared to traditional SO-8 or DPAK?

LFPAK88's exposed drain mounting base (Pin mb) provides a direct, low-resistance thermal path to the PCB, achieving R_th(j-mb) = 0.36 K/W - up to 3× better than DPAK (1.1 K/W) and 5× better than SO-8 (1.8 K/W). This enables higher power density and eliminates need for external heatsinks in many 300–500 W designs.

Can PSMN2R8-80SSF replace a 100 V MOSFET in a 48 V system?

Yes - its 80 V V_DS rating provides sufficient margin for 48 V nominal systems with typical transients up to 60–70 V. However, if the system experiences >80 V spikes (e.g., due to long cable inductance or regenerative braking), a 100 V device remains safer; verify worst-case V_DS stress with oscilloscope measurements before substitution.

PSMN2R8-80SSFJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1235

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 190A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 143 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10088 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 341W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK88 (SOT1235)

PSMN2R8-80SSFJ FAQ

1.How can I place an order for PSMN2R8-80SSFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R8-80SSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R8-80SSFJ reliable?

The price and inventory of PSMN2R8-80SSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R8-80SSFJ is usually 5 days.

3.What payment methods are accepted for PSMN2R8-80SSFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R8-80SSFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R8-80SSFJ?

PSMN2R8-80SSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R8-80SSFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R8-80SSFJ?

For technical support, including PSMN2R8-80SSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R8-80SSFJ requirements.

6.How does Aetrix verify that PSMN2R8-80SSFJ is sourced from the original manufacturer or authorized distributors?

All PSMN2R8-80SSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R8-80SSFJ meets industry standards.

7.What is the process for return or replacement of PSMN2R8-80SSFJ?

All PSMN2R8-80SSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R8-80SSFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R8-80SSFJ part is unused and in its original packaging.

Return procedure for PSMN2R8-80SSFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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