Nexperia USA Inc. PSMN2R9-25YLC,115
- Part No.:
- PSMN2R9-25YLC,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN2R9-25YLC,115.pdf
- Description:
- MOSFET N-CH 25V 100A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:9,962
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Product details
Overview
PSMN2R9-25YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 25 V VDS, 3.15 mΩ RDS(on) at VGS = 10 V and 25 °C, and 100 A continuous drain current at Tmb = 25 °C. It employs NextPower Superjunction technology, optimized for 4.5 V gate drive, and is qualified to 175 °C junction temperature for industrial power OR-ing and synchronous rectification.
For engineers reviewing the PSMN2R9-25YLC datasheet, PSMN2R9-25YLC pinout, PSMN2R9-25YLC application, or PSMN2R9-25YLC equivalent, key selection criteria include its ultra-low QG (16 nC @ 4.5 V), low QGD (4.4 nC), 1.46 K/W junction-to-mounting-base thermal resistance, and robust avalanche energy rating (47 mJ).
Technical Context
This MOSFET uses NextPower Superjunction architecture to achieve high efficiency across low- and high-load conditions. Its gate threshold voltage (VGS(th)) ranges from 1.05 V to 1.95 V at 25 °C, enabling reliable turn-on with logic-level drivers, and maintains stable RDS(on) up to 150 °C (5.05 mΩ @ VGS = 10 V).
The LFPAK package integrates a thermally enhanced mounting base connected directly to the drain, delivering low parasitic inductance and resistance. Dynamic characteristics-including 19.5 ns td(on), 19 ns tr, and 32 ns td(off)-support high-frequency switching in DC-DC converters and server power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 24 V rail systems and battery protection circuits |
| RDS(on) | 3.15 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current load switching |
| ID | 100 A @ Tmb = 25 °C - Continuous current capability limited by LFPAK thermal performance, not silicon |
| QG(tot) | 16 nC @ VGS = 4.5 V - Low gate charge reduces driver power demand and switching losses in 4.5 V control environments |
| Rth(j-mb) | 1.46 K/W - Junction-to-mounting-base thermal resistance enables efficient heat transfer to PCB copper or heatsink |
| EAS | 47 mJ - Non-repetitive avalanche energy supports robustness against inductive switching transients |
| VGS(th) | 1.54 V typ @ 25 °C - Ensures full enhancement with standard 3.3 V/5 V logic outputs without level-shifting |
Pinout & Package
PSMN2R9-25YLC is housed in the SOT669 (LFPAK; Power-SO8) plastic surface-mount package, featuring an exposed mounting base electrically connected to the drain for low-inductance, high-current routing and direct thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel source terminals reduce source inductance and improve current sharing in high-frequency switching |
| 4 | Gate | Single gate input with 2 Ω typical gate resistance; compatible with standard MOSFET drivers without external gate resistor |
| Mounting base | Drain | Exposed copper pad tied internally to drain; serves as primary current path and thermal interface to PCB |
Key Features
| Feature | Design Value |
|---|---|
| NextPower Superjunction technology | Enables 3.15 mΩ RDS(on) at 25 V while maintaining low QOSS (18.5 nC) for high-efficiency hard-switching |
| Logic-level gate drive (4.5 V) | Guarantees full enhancement at VGS = 4.5 V, eliminating need for gate boosters in 5 V or 3.3 V microcontroller-driven designs |
| 175 °C qualified operation | Supports extended thermal margin in enclosed industrial and server environments without derating |
| Ultra-low QGD (4.4 nC) | Minimizes Miller-induced switching delay and dv/dt-induced false turn-on in high-side configurations |
| Optimized for power OR-ing | Low forward voltage drop and fast reverse recovery (trr = 32 ns) reduce body diode conduction loss during transition |
Applications
| DC-DC Converters | Lithium-ion Battery Protection |
|---|---|
|
Use Scenario: High-current buck converter in telecom power modules operating at 300 kHz switching frequency. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 12 A. Use Value: 3.15 mΩ RDS(on) cuts conduction loss by >60% vs. 15 mΩ alternatives, enabling >95% efficiency at full load. |
Use Scenario: Primary overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs for power tools. IC Role / Device Role / Timing Role: Low-side protection FET controlled by battery management IC to interrupt fault current within 10 µs. Use Value: 517 A peak drain current (IDM) withstands surge currents during short-circuit events without failure. |
| Power OR-ing | Server Power Supplies |
|
Use Scenario: Redundant 12 V input OR-ing circuit in enterprise storage enclosures with dual PSUs. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, bidirectional current path with reverse polarity protection. Use Value: 0.8 V typical VSD and 32 ns trr minimize body diode conduction loss during switchover transients. |
Use Scenario: 48 V to 12 V intermediate bus converter in rack-mounted servers requiring >800 W output. IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology operating at 200–500 kHz. Use Value: 1.46 K/W Rth(j-mb) allows 92 W Ptot dissipation on 2 oz copper, reducing heatsink size by 35% vs. SO-8 equivalents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN3R3-25YLH | Higher RDS(on) (3.3 mΩ min), same VDS/package, but lower QG (14.5 nC @ 4.5 V) | Better suited for ultra-high-frequency (>1 MHz) DC-DC where gate charge dominates losses | Select when prioritizing switching loss reduction over conduction loss in light-load-dominated applications |
| IRLHS6342TRPBF | Same 25 V rating and LFPAK-4 package, but higher RDS(on) (4.2 mΩ typ), higher QGD (6.2 nC) | Less suitable for high-current sync rectification due to higher conduction and Miller losses | Consider only if Nexperia supply continuity requires second-source qualification with relaxed efficiency targets |
Compared with PSMN2R9-25YLC, PSMN3R3-25YLH trades marginal RDS(on) increase for lower gate charge-ideal for high-frequency operation-while IRLHS6342TRPBF offers broader distributor availability but sacrifices 25% higher conduction loss and slower switching.
Availability
PSMN2R9-25YLC is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and power OR-ing applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and communications equipment.
Supply support for PSMN2R9-25YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET solutions, with manufacturing and R&D centers across Asia, Europe, and the Americas.
This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in industrial, server, and battery-powered systems where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current for PSMN2R9-25YLC at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current is 91 A under VGS = 10 V conditions, as specified in Table 5 (Limiting Values). This derating reflects thermal limits of the LFPAK package rather than silicon capability, and is validated via Figure 1 in the datasheet.
Does PSMN2R9-25YLC require a gate resistor for safe operation in a 300 kHz synchronous buck converter?
A gate resistor is recommended but not strictly required: the device's 2 Ω typical gate resistance and 16 nC total gate charge allow direct drive from most 3.3 V/5 V microcontrollers at ≤300 kHz. However, a 4.7 Ω external resistor (per Figure 14 test condition) ensures controlled turn-on/turn-off and suppresses ringing in high-di/dt layouts.
Can PSMN2R9-25YLC be used in automotive applications?
No-PSMN2R9-25YLC is not automotive-qualified. The datasheet explicitly states it is designed for industrial, communications, and domestic equipment, and lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed operation beyond 125 °C ambient. Automotive use violates Nexperia's suitability disclaimer.
How does the mounting base connection affect PCB layout for thermal performance?
The mounting base is internally connected to the drain and must be soldered to a large, low-thermal-resistance copper pour (≥200 mm², 2 oz Cu) to achieve the rated 1.46 K/W Rth(j-mb). Thermal vias (≥8×0.3 mm) beneath the pad are essential to conduct heat into inner layers or heatsinks; insufficient copper area increases junction temperature by >25 °C at full load.
PSMN2R9-25YLC,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2083 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 92W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN2R9-25YLC,115 FAQ
1.How can I place an order for PSMN2R9-25YLC,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN2R9-25YLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN2R9-25YLC,115 reliable?
The price and inventory of PSMN2R9-25YLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R9-25YLC,115 is usually 5 days.
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PSMN2R9-25YLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN2R9-25YLC,115 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for PSMN2R9-25YLC,115?
For technical support, including PSMN2R9-25YLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R9-25YLC,115 requirements.
6.How does Aetrix verify that PSMN2R9-25YLC,115 is sourced from the original manufacturer or authorized distributors?
All PSMN2R9-25YLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R9-25YLC,115 meets industry standards.
7.What is the process for return or replacement of PSMN2R9-25YLC,115?
All PSMN2R9-25YLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R9-25YLC,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN2R9-25YLC,115 part is unused and in its original packaging.
Return procedure for PSMN2R9-25YLC,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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