Nexperia USA Inc. PSMN2R9-30MLC,115

Overview

PSMN2R9-30MLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK33 (SOT1210) package, designed for high-efficiency DC-to-DC conversion and load switching. It delivers 2.95 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 70 A continuous drain current at T_mb = 25 °C, and features ultra-low Q_G (16.7 nC @ 4.5 V) and Q_GD (4.4 nC) for fast switching in synchronous buck regulators.

For engineers reviewing the PSMN2R9-30MLC datasheet, PSMN2R9-30MLC pinout, PSMN2R9-30MLC application, or PSMN2R9-30MLC equivalent, this device is selected for its low gate charge, 30 V V_DS rating, LFPAK33 thermal performance, and optimized 4.5 V drive compatibility in industrial power supplies and communications infrastructure.

Technical Context

This MOSFET uses Nexperia's NextPower Superjunction technology to achieve ultra-low parasitic inductance and resistance while maintaining robust avalanche ruggedness (75 mJ unclamped). Its gate threshold voltage (1.45–2.15 V) and low R_DS(on) temperature coefficient enable stable operation across -55 °C to 175 °C junction range.

The LFPAK33 package integrates a thermally enhanced mounting base connected directly to the drain, delivering R_th(j-mb) = 1.44 K/W and enabling high-power density designs without external heatsinking in many applications.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount plastic package with exposed mounting base for direct thermal coupling to PCB copper. The package features three parallel source terminals and one gate terminal, with drain internally connected to the mounting base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPP040N04L and NTMFS4C09NT1G, PSMN2R9-30MLC offers superior thermal performance via LFPAK33 mounting base, lower Q_G for faster switching, and tighter R_DS(on) tolerance-making it optimal for high-current, high-efficiency industrial DC-DC and load switching where thermal density matters.

Availability

PSMN2R9-30MLC is available at Aetrix Electronics and suitable for industrial power supplies, telecommunications infrastructure equipment, and domestic appliance motor control requiring stable component supply and long-term manufacturability.

Supply support for PSMN2R9-30MLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.

This part belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in industrial and communications power systems.

FAQ

What is the maximum continuous drain current for PSMN2R9-30MLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current remains 70 A per datasheet limiting values (Table 4), as current rating is not derated with mounting base temperature up to 100 °C. Derating begins above 100 °C per Figure 1, where ID drops to ~55 A at T_mb = 125 °C.

Can PSMN2R9-30MLC be used with 3.3 V gate drive in a synchronous buck converter?

No-while V_GS(th) starts at 1.45 V, R_DS(on) rises sharply below 4.5 V: at V_GS = 3.3 V, R_DS(on) exceeds 10 mΩ (extrapolated from Figure 7), causing excessive conduction loss. It is specified and optimized for ≥4.5 V gate drive.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base is internally connected to the drain (as confirmed in Table 2 pinning and Figure 17 package outline). It must be routed as a high-voltage node on the PCB and cannot serve as a ground or source reference plane.

Does PSMN2R9-30MLC have integrated ESD protection on the gate?

Yes-the datasheet specifies V_ESD = 340 V (MM method, JEDEC JESD22-A115), confirming built-in gate oxide protection sufficient for standard handling and board assembly, though external TVS is still recommended in high-noise industrial environments.