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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R0-30YL,115

Name: PSMN3R0-30YL,115
Brand: Nexperia USA Inc.
SKU: PSMN3R0-30YL,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R0-30YL,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R0-30YL,115.pdf

Description:: MOSFET N-CH 30V 100A LFPAK56

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Product details

Overview

PSMN3R0-30YL from Nexperia is a logic-level N-channel enhancement-mode TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V V_DS, 3 mΩ R_DS(on) at V_GS = 10 V and 15 A, 100 A continuous drain current at T_mb = 25 °C, and optimized for high-efficiency switching in industrial and communications power stages.

For engineers reviewing the PSMN3R0-30YL datasheet, PSMN3R0-30YL pinout, PSMN3R0-30YL application, or PSMN3R0-30YL equivalent, this device supports logic-level gate drive (V_GS(th) = 1.3–2.15 V), delivers low conduction loss in DC-DC converters and Class-D amplifiers, and features robust avalanche energy rating (75 mJ) and thermal resistance of 0.9–1.5 K/W from junction to mounting base.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) and fast switching with Q_G(tot) = 21 nC at V_GS = 4.5 V and Q_GD = 5.1 nC, enabling efficient operation in hard-switched topologies. Its gate threshold voltage range (1.3–2.15 V at 25 °C) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The LFPAK package integrates a thermally enhanced mounting base connected to the drain, supporting high-current operation up to 100 A with low thermal resistance (R_th(j-mb) = 0.9 K/W typ). The internal source-drain diode exhibits V_SD = 0.82–1.2 V at 25 A and t_rr = 35 ns, suitable for synchronous rectification and freewheeling roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe operating voltage ceiling in buck, boost, and half-bridge topologies.
R_DS(on)	2.19–3 mΩ at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <1 W conduction loss at 50 A, critical for high-current server PSU rails.
I_D (cont)	100 A at T_mb = 25 °C - supported by LFPAK's low R_th(j-mb) and copper clip construction, not limited by wirebond capacity.
Q_G(tot)	21 nC at V_GS = 4.5 V - determines gate driver current requirement (~2.1 A peak for 10 ns rise time), compatible with standard logic-level drivers.
E_AS	75 mJ non-repetitive avalanche energy - provides margin against inductive switching transients in motor control and relay driving.
R_th(j-mb)	0.9–1.5 K/W - enables direct thermal coupling to heatsink or PCB copper, reducing junction temperature rise by >50% vs. SO-8.
V_GS(th)	1.3–2.15 V at I_D = 1 mA - ensures full enhancement with 3.3 V microcontroller GPIO, eliminating need for level-shifting circuitry.

Pinout & Package

PSMN3R0-30YL uses the SOT669 (LFPAK) plastic surface-mount package with exposed mounting base (drain-connected) for superior thermal and current handling. Dimensions: 5.0 × 3.3 × 1.3 mm (L × W × H), with 4 solder terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and resistance, improving switching efficiency and current sharing in high-frequency operation.
4	Gate (G)	Single gate input with R_G = 0.55–1.5 Ω - minimizes gate ringing and simplifies RC snubber design in hard-switched applications.
Mounting base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heat dissipation interface to PCB or heatsink.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) ≤ 2.15 V ensures full enhancement using 3.3 V or 5 V controllers without external level shifters.
TrenchMOS low R_DS(on)	2.19 mΩ typical at 10 V gate drive reduces conduction losses by >30% versus planar MOSFETs in same package class.
LFPAK thermal performance	R_th(j-mb) = 0.9 K/W enables 81 W power dissipation at T_mb = 25 °C - 2× higher than SO-8 equivalents.
Robust avalanche capability	75 mJ E_AS withstands unclamped inductive turn-off events common in motor gate drivers and solenoid controls.
Low gate charge asymmetry	Q_GD/Q_G(tot) = 24% optimizes Miller effect control, reducing risk of spurious turn-on during high dV/dt commutation.

Applications

Class-D Audio Amplifier

Server DC-DC Converter

Use Scenario: High-efficiency output stage in 100 W+ audio amplifiers requiring low THD and wide bandwidth.

IC Role / Device Role / Timing Role: Power switch in half-bridge topology, switching at 300–500 kHz with precise dead-time control.

Use Value: 3 mΩ R_DS(on) and 21 nC Q_G(tot) minimize combined conduction and switching loss, enabling >90% efficiency at full load.

Use Scenario: Primary-side synchronous rectifier in 12 V → 1 V/100 A VRM for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter, driven by dedicated gate controller.

Use Value: Three-source-pin layout lowers source inductance, improving transient response and reducing voltage overshoot during load steps.

Industrial Motor Control

Communications Power Supply

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: High-current switching element with integrated body diode used for PWM-controlled phase current.

Use Value: 75 mJ avalanche rating protects against back-EMF spikes during abrupt current interruption in inductive loads.

Use Scenario: Main switch in 48 V input telecom rectifier supplying 12 V/30 A to base station subsystems.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant converter operating at 200–300 kHz.

Use Value: LFPAK mounting base enables direct thermal attachment to cold plate, maintaining T_j < 125 °C under full load at 60 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	Higher R_DS(on) (3.3 mΩ min), SO-8 package, no exposed drain pad - R_th(j-a) = 62 K/W vs. 0.9 K/W (j-mb).	Limited to lower-current (<40 A) or forced-air-cooled applications; unsuitable for high-power density designs.	Select when board space allows SO-8 footprint and thermal budget permits higher junction temperature rise.
DMT3006LPS-13	Lower V_DS (25 V), similar R_DS(on) (2.8 mΩ), PowerSO-10 package with drain tab - R_th(j-mb) = 1.2 K/W.	Better suited for 24 V systems; not rated for 30 V bus transients or 48 V intermediate bus architectures.	Prefer for cost-sensitive 24 V motor drives where 30 V rating margin is unnecessary.

Compared with IRL3803PbF and DMT3006LPS-13, PSMN3R0-30YL delivers superior thermal performance via its LFPAK mounting base, higher voltage rating for 48 V system margin, and lower gate charge for faster switching - making it optimal for compact, high-current industrial and telecom power stages.

Availability

PSMN3R0-30YL is available at Aetrix Electronics and suitable for Class-D amplifiers, server DC-DC converters, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN3R0-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power supplies, communications infrastructure, and motor control where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PSMN3R0-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 96 A per the datasheet limiting values table. This reflects thermal constraints of the LFPAK package, not silicon limits - the device maintains full 30 V V_DS rating across this range.

Can PSMN3R0-30YL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes - with V_GS(th) as low as 1.3 V and guaranteed turn-on at 4.5 V, the device achieves usable R_DS(on) (~4.04 mΩ) at 3.3 V gate drive. However, full 2.19 mΩ performance requires 10 V; for high-frequency or high-current use, a dedicated gate driver is recommended to ensure fast switching and low Q_G-related losses.

How does the LFPAK package improve thermal performance compared to standard SO-8?

The LFPAK's exposed mounting base (connected to drain) provides a direct thermal path from junction to PCB copper or heatsink, achieving R_th(j-mb) = 0.9 K/W - over 6× better than SO-8's typical R_th(j-a) = 62 K/W. This allows 81 W power dissipation at T_mb = 25 °C, versus ~2.5 W for SO-8 under natural convection.

Is the internal body diode suitable for synchronous rectification in a buck converter?

Yes - the source-drain diode has V_SD = 0.82–1.2 V at 25 A and t_rr = 35 ns, enabling efficient freewheeling. Its Q_r = 29 nC is low enough to minimize reverse recovery loss when paired with appropriate gate timing, though external Schottky diodes may still be preferred in ultra-high-frequency (>1 MHz) designs.

PSMN3R0-30YL,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 45.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2822 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 81W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R0-30YL,115 FAQ

1.How can I place an order for PSMN3R0-30YL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R0-30YL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R0-30YL,115 reliable?

The price and inventory of PSMN3R0-30YL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R0-30YL,115 is usually 5 days.

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PSMN3R0-30YL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R0-30YL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R0-30YL,115?

For technical support, including PSMN3R0-30YL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R0-30YL,115 requirements.

6.How does Aetrix verify that PSMN3R0-30YL,115 is sourced from the original manufacturer or authorized distributors?

All PSMN3R0-30YL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R0-30YL,115 meets industry standards.

7.What is the process for return or replacement of PSMN3R0-30YL,115?

All PSMN3R0-30YL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R0-30YL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R0-30YL,115 part is unused and in its original packaging.

Return procedure for PSMN3R0-30YL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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