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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R0-30YLD/2X

Name: PSMN3R0-30YLD/2X
Brand: Nexperia USA Inc.
SKU: PSMN3R0-30YLD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R0-30YLD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R0-30YLD/2X.pdf

Description:: PSMN3R0-30YLD/SOT669/LFPAK

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Product details

Overview

PSMN3R0-30YLD from Nexperia is an N-channel 30 V, 3.0 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, engineered for high-efficiency synchronous rectification and DC-DC conversion. It delivers R_DS(on) = 2.57 mΩ @ V_GS = 10 V, 25 °C; Q_G(tot) = 14.5–21.9 nC @ V_GS = 4.5 V; and soft-recovery diode performance with s-factor > 1.07, enabling low EMI in telecom VRM and POL modules.

For engineers reviewing the PSMN3R0-30YLD datasheet, PSMN3R0-30YLD pinout, PSMN3R0-30YLD application, or PSMN3R0-30YLD equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 100 A continuous drain current capability at T_mb = 25 °C, SchottkyPlus diode behavior with < 1 µA leakage, and LFPAK56 thermal resistance of 1.46 K/W (j-mb).

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-integrating a low-leakage, soft-recovery body diode that mimics Schottky performance without elevated reverse leakage. Its gate charge profile (Q_GD = 4.5–6.7 nC, Q_G(tot) = 14.5–21.9 nC @ 4.5 V) enables fast switching with minimal spiking, critical for >1 MHz DC-DC topologies.

The LFPAK56 package uses clip-bonded die attach and exposed mounting base (drain-connected), eliminating wire bonds and glue to achieve 175 °C junction rating and 1.46 K/W R_th(j-mb). Gate threshold voltage is tightly specified at 1.2–2.2 V, ensuring robust turn-on with standard logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom/server power stages.
R_DS(on)	2.57 mΩ @ V_GS = 10 V, 25 °C - Enables < 0.26 W conduction loss at 100 A, critical for high-current POL efficiency.
I_D	100 A continuous @ T_mb = 25 °C - Package-limited current supports high-density VRM output stages without external heatsinking.
Q_G(tot)	14.5–21.9 nC @ V_GS = 4.5 V - Low gate charge reduces driver losses and enables efficient operation with 4.5 V controllers like uP-based PMICs.
s-factor	>1.07 - Quantifies soft reverse recovery; suppresses voltage overshoot and ringing during diode commutation in synchronous buck secondaries.
R_th(j-mb)	1.46 K/W - Direct thermal path from junction to PCB mounting base enables high-power dissipation with minimal temperature rise on standard 2 oz copper.
V_GS(th)	1.2–2.2 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V gate drivers, eliminating need for level shifters.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, clip-bonded Power-SO8 variant with exposed drain mounting base for optimal thermal transfer and visual solder inspection. It features no wire bonds or die attach glue, qualified to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and resistance, improving current sharing and reducing switching losses.
4	Gate (G)	Single gate input optimized for low-inductance layout; gate resistance typ. 0.57 Ω supports stable high-frequency drive.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; serves as primary thermal and current path to PCB, enabling >90 W power handling.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft recovery (s-factor > 1.07) with < 1 µA leakage at 25 °C-enables synchronous rectification without Schottky's reliability trade-offs.
Ultra-low Q_G and Q_GD	Q_G(tot) = 14.5–21.9 nC, Q_GD = 4.5–6.7 nC @ 4.5 V-minimizes switching energy and dv/dt-induced shoot-through risk in high-frequency converters.
Optimized for 4.5 V drive	R_DS(on) = 3.2–4.0 mΩ @ V_GS = 4.5 V, 25 °C-ensures full enhancement with common PMIC outputs, eliminating gate boost requirements.
Low parasitic inductance	Clip-bonded construction and triple-source terminals reduce L_source and L_gate, suppressing voltage spikes and EMI in hard-switched topologies.
Wave-solderable package	Exposed leads allow automated optical inspection of solder joints-critical for high-reliability server and telecom manufacturing.

Applications

Server DC-DC Conversion

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation delivering 12 V → 1.2 V/100 A to CPU/GPU in rack-mounted servers.

IC Role / Device Role: Synchronous rectifier switch in multiphase buck converter secondary side.

Use Value: 2.57 mΩ R_DS(on) and 1.46 K/W thermal resistance enable >95% efficiency at full load while maintaining T_j < 125 °C on standard PCB.

Use Scenario: 48 V → 12 V isolated DC-DC module in telecom base station power supplies.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes in forward or LLC resonant converters.

Use Value: SchottkyPlus diode behavior eliminates reverse recovery loss and EMI, while < 1 µA leakage preserves light-load efficiency over temperature.

VRM Voltage Regulator Module

Brushless Motor Control

Use Scenario: High-current voltage regulator for ASIC/FPGA core supply in networking equipment.

IC Role / Device Role: High-side or low-side switch in multi-phase VRM with 300 kHz–1 MHz switching frequency.

Use Value: Ultra-low Q_G and soft-recovery diode reduce gate drive loss and body diode stress, enabling stable operation without snubbers.

Use Scenario: 24 V three-phase inverter driving BLDC motors in industrial automation actuators.

IC Role / Device Role: Low-side switching element in half-bridge leg, conducting high pulsed currents up to 512 A peak.

Use Value: 512 A peak drain current rating and 227.5 mJ avalanche energy support robust motor stall and regenerative braking conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R8-30YLC	Lower R_DS(on) (2.8 mΩ typ @ 10 V), same LFPAK56 package, but higher Q_G (25.5 nC @ 4.5 V)	Better conduction loss at high DC current; less suitable for >1 MHz switching due to higher gate charge	Select when thermal budget dominates over switching loss-e.g., low-frequency VRMs with forced air cooling.
IRLHS6342	SO-8 package, 3.1 mΩ @ 4.5 V, 175 °C rated, but R_th(j-a) = 50 K/W vs. 1.46 K/W j-mb	Higher thermal resistance limits power density; requires larger copper area or heatsink for equivalent current handling	Select only when LFPAK56 footprint is incompatible and board space allows for thermal derating.

Compared with PSMN2R8-30YLC, PSMN3R0-30YLD trades 0.23 mΩ higher R_DS(on) for 30% lower Q_G, favoring high-frequency efficiency; versus IRLHS6342, it delivers 34× better thermal resistance via clip-bonded LFPAK56, enabling compact 100 A designs without external cooling.

Availability

PSMN3R0-30YLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side synchronous rectification, and VRM voltage regulator modules requiring stable component supply across extended production lifecycles.

Supply support for PSMN3R0-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PSMN3R0-30YLD belongs to the NextPowerS3 portfolio-designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low Q_G, soft diode recovery, and robust thermal performance are mandatory.

FAQ

What is the maximum continuous drain current for PSMN3R0-30YLD at 100 °C mounting base temperature?

The maximum continuous drain current is 90 A at T_mb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the LFPAK56 package and is validated by Fig. 2 in the datasheet, which plots ID versus T_mb with a hard cap at 100 A due to package limits.

Does PSMN3R0-30YLD have avalanche capability, and how is it rated?

Yes, PSMN3R0-30YLD is 100% tested for non-repetitive drain-source avalanche energy, rated at 227.5 mJ under conditions of V_GS = 10 V, T_j(init) = 25 °C, I_D = 25 A, V_sup ≤ 30 V, and R_GS = 50 Ω. This ruggedness supports reliable operation during inductive load switching and fault transients.

Can PSMN3R0-30YLD be driven directly by a 3.3 V microcontroller GPIO?

No-while its V_GS(th) min is 1.2 V, full enhancement requires ≥4.5 V to achieve R_DS(on) ≤ 4 mΩ. At 3.3 V, R_DS(on) rises significantly (>10 mΩ), increasing conduction loss. A dedicated gate driver or level shifter is required for robust 3.3 V control.

How does the "SchottkyPlus" technology differ from a true Schottky diode in this MOSFET?

SchottkyPlus integrates a body diode with Schottky-like soft recovery (s-factor > 1.07) and low forward voltage (~0.82 V), but maintains MOSFET-class reverse leakage (< 1 µA at 25 °C)-unlike physical Schottky diodes, which exhibit orders-of-magnitude higher leakage above 85 °C.

PSMN3R0-30YLD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2939 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R0-30YLD/2X FAQ

1.How can I place an order for PSMN3R0-30YLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R0-30YLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R0-30YLD/2X reliable?

The price and inventory of PSMN3R0-30YLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R0-30YLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN3R0-30YLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R0-30YLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R0-30YLD/2X?

PSMN3R0-30YLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R0-30YLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R0-30YLD/2X?

For technical support, including PSMN3R0-30YLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R0-30YLD/2X requirements.

6.How does Aetrix verify that PSMN3R0-30YLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN3R0-30YLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R0-30YLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN3R0-30YLD/2X?

All PSMN3R0-30YLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R0-30YLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R0-30YLD/2X part is unused and in its original packaging.

Return procedure for PSMN3R0-30YLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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