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Nexperia USA Inc. PSMN3R0-60BS,118

Name: PSMN3R0-60BS,118
Brand: Nexperia USA Inc.
SKU: PSMN3R0-60BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R0-60BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN3R0-60BS,118.pdf

Description:: MOSFET N-CH 60V 100A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,875

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Product details

Overview

PSMN3R0-60BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 60 V V_DS, 3.2 mΩ R_DS(on) at 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in DC-DC converters, server power supplies, and motor control circuits where low conduction loss and robust thermal performance are critical.

For engineers reviewing the PSMN3R0-60BS,118 datasheet, PSMN3R0-60BS,118 pinout, PSMN3R0-60BS,118 application, or PSMN3R0-60BS,118 equivalent, key selection criteria include its 3.2 mΩ on-resistance at 10 V gate drive, 130 nC total gate charge, 800 mJ unclamped avalanche energy rating, and D2PAK mounting-base thermal path enabling high-power dissipation in industrial and communications equipment.

Technical Context

This MOSFET employs a planar trench-gate silicon process optimized for standard-level gate drive compatibility (V_GS = 10 V), delivering low R_DS(on) without requiring logic-level or enhanced gate drivers. Its thermal design centers on direct junction-to-mounting-base conduction (R_th(j-mb) = 0.3–0.49 K/W), supporting high-current operation when soldered to a thermally robust PCB copper area.

The device features a built-in source-drain diode with 0.88–1.2 V forward voltage at 25 A and 54 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched topologies. Its 8079 pF input capacitance and 492 pF reverse transfer capacitance support predictable switching behavior under 10 V gate drive with 1.5 Ω external gate resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in power stage applications; supports 48 V bus systems with margin.
R_DS(on)	3.2 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-efficiency server PSUs.
I_D (continuous)	100 A @ T_mb = 25 °C - Sustains high load currents when mounted on adequately sized copper heatsink pads.
Q_G(tot)	130 nC - Determines gate driver power requirement and switching speed; compatible with common 1–2 A peak gate drivers.
E_AS	800 mJ unclamped avalanche energy - Provides ruggedness against inductive turn-off transients in motor drives and DC-DC converters.
R_th(j-mb)	0.3–0.49 K/W - Enables efficient heat transfer to PCB mounting base; allows >250 W power handling with proper thermal design.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures reliable turn-on with standard 5–10 V gate drive; remains functional up to 175 °C junction.

Pinout & Package

D2PAK (SOT404) package with isolated mounting base connected internally to drain; requires thermal pad soldering to PCB for optimal heat dissipation. Pin 2 is not electrically accessible per datasheet.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; driven by 10 V standard-level source; 1.1 Ω internal gate resistance limits dV/dt.
2 (D)	Drain	Not externally accessible; internally tied to mounting base; primary high-side connection point for power path.
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side return path in buck or half-bridge topologies.
Mounting Base (mb)	Drain (thermal & electrical)	Electrically and thermally coupled to drain; must be soldered to large copper area for R_th(j-mb) ≤ 0.49 K/W performance.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V, eliminating need for level-shifters or specialized gate drivers in 12/15 V control rails.
High-temperature qualification	Rated for continuous operation up to T_j = 175 °C, supporting reliability in enclosed industrial enclosures and server chassis.
Low R_DS(on) temperature coefficient	R_DS(on) increases only 2.3× from 25 °C to 175 °C (2.7 → 6.21 mΩ), maintaining stable conduction loss across wide thermal range.
Robust avalanche capability	800 mJ non-repetitive E_AS enables tolerance of inductive switching faults without failure in motor control and converter designs.
Optimized for surface-mount thermal management	D2PAK mounting base provides direct thermal path to PCB; R_th(j-mb) = 0.3 K/W enables >250 W dissipation with 50 °C rise over ambient.

Applications

DC-DC Converters

Server Power Supplies

Use Scenario: High-current synchronous buck converter in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Primary high-side power switch handling up to 100 A output current with 300 kHz switching frequency.

Use Value: 3.2 mΩ R_DS(on) minimizes conduction loss, while 130 nC Q_G enables efficient gate drive with low driver power consumption.

Use Scenario: OR-ing FET and hot-swap controller in redundant 12 V server PSU outputs.

IC Role / Device Role / Timing Role: Low-loss bidirectional power path switch with fast turn-on/off for fault isolation and current sharing.

Use Value: 0.88 V V_SD forward drop and 54 ns t_rr reduce body-diode conduction loss during transient events.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor driver for industrial automation.

IC Role / Device Role / Timing Role: High-current switching element subjected to inductive kickback and PWM commutation.

Use Value: 800 mJ E_AS withstands unclamped inductive energy during short-circuit or stall conditions without degradation.

Use Scenario: High-side power switch for 48 V battery-powered equipment with soft-start and current limiting.

IC Role / Device Role / Timing Role: Main power path controller enabling controlled ramp-up of system voltage and fault protection.

Use Value: 60 V V_DS rating accommodates battery overvoltage transients; 100 A I_D supports peak surge loads up to 824 A (pulsed).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	60 V, 4 mΩ R_DS(on), 200 A I_D, TO-220 package, higher Q_G (190 nC)	Larger footprint, lower thermal efficiency due to higher R_th(j-c); less suitable for high-density SMT designs	Prefer PSMN3R0-60BS,118 for space-constrained, thermally demanding SMT applications requiring <4 mΩ and D2PAK mounting.
STP60NF06	60 V, 0.008 Ω (8 mΩ) R_DS(on), 60 A I_D, TO-220, lower avalanche rating (E_AS = 300 mJ)	Lower current and ruggedness headroom; unsuitable for 100 A continuous or high-energy inductive loads	Choose PSMN3R0-60BS,118 where ≥100 A continuous current, 3.2 mΩ conduction loss, and 800 mJ avalanche energy are required.

Compared with IRF1404PBF and STP60NF06, PSMN3R0-60BS,118 delivers superior power density via D2PAK thermal integration, lower R_DS(on) at operating temperature, and significantly higher avalanche energy-making it optimal for compact, high-reliability industrial and server power stages.

Availability

PSMN3R0-60BS,118 is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN3R0-60BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-effective, thermally robust switching in industrial power conversion, communications infrastructure, and computing power delivery.

FAQ

What is the maximum continuous drain current for PSMN3R0-60BS,118 at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 83.4 A per the datasheet limiting values table. This reflects thermal constraints of the D2PAK package under real-world PCB thermal conditions, not a device limitation at the silicon level.

Does PSMN3R0-60BS,118 have an integrated body diode, and what are its key parameters?

Yes-it features a monolithic source-drain diode with typical forward voltage of 0.88 V at 25 A and 25 °C, reverse recovery time of 54 ns, and recovered charge of 97 nC. These values enable efficient freewheeling in hard-switched topologies without external diode supplementation.

Can PSMN3R0-60BS,118 be used with 5 V gate drive?

No-its gate threshold voltage is 2–4 V, but full enhancement requires V_GS ≥ 10 V to achieve the specified 3.2 mΩ R_DS(on). At 5 V, R_DS(on) rises significantly (>15 mΩ), increasing conduction loss and thermal stress; it is designed for standard-level, not logic-level, drive.

What is the thermal resistance from junction to mounting base, and how should the mounting base be implemented on the PCB?

R_th(j-mb) is 0.3–0.49 K/W. The mounting base must be soldered to a large, low-impedance copper area (≥ 10 cm² recommended) with multiple thermal vias to inner ground planes. Avoid isolation gaps or thin traces beneath the base to maintain thermal performance.

PSMN3R0-60BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8079 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN3R0-60BS,118 FAQ

1.How can I place an order for PSMN3R0-60BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R0-60BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R0-60BS,118 reliable?

The price and inventory of PSMN3R0-60BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R0-60BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN3R0-60BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R0-60BS,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R0-60BS,118?

PSMN3R0-60BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R0-60BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R0-60BS,118?

For technical support, including PSMN3R0-60BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R0-60BS,118 requirements.

6.How does Aetrix verify that PSMN3R0-60BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN3R0-60BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R0-60BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN3R0-60BS,118?

All PSMN3R0-60BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R0-60BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R0-60BS,118 part is unused and in its original packaging.

Return procedure for PSMN3R0-60BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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