Nexperia USA Inc. PSMN3R0-60ES,127

Overview

PSMN3R0-60ES from Nexperia is a standard-level N-channel MOSFET in I2PAK (SOT226) package, rated for 60 V drain-source voltage, 3.0 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency load switching in server power supplies and motor control circuits.

For engineers reviewing the PSMN3R0-60ES datasheet, PSMN3R0-60ES pinout, PSMN3R0-60ES application, or PSMN3R0-60ES equivalent, key selection criteria include its low R_DS(on), robust avalanche energy rating (800 mJ), thermal resistance of 0.3 K/W (junction-to-mounting base), and compatibility with standard 10 V gate drive sources.

Technical Context

This MOSFET uses planar silicon technology with optimized channel geometry to achieve low conduction loss while maintaining ruggedness under repetitive and unclamped inductive switching. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable turn-on across wide temperature ranges.

The device integrates an intrinsic body diode with 54 ns reverse recovery time and 97 nC recovered charge, supporting synchronous rectification and freewheeling in DC-DC converters. Its 0.3 K/W thermal resistance and 306 W total power dissipation at T_mb = 25 °C enable high-current operation with minimal heatsink requirements.

Key Specifications

Pinout & Package

I2PAK (SOT226) plastic single-ended package with isolated mounting base connected internally to the drain terminal. The package features low-profile 3-lead TO-262 outline, 15.0 mm × 10.3 mm footprint, and 1.27 mm lead pitch for high-current PCB routing and mechanical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFB4115PBF and STP110N6F6, PSMN3R0-60ES offers superior thermal performance (0.3 K/W vs. ≥0.45 K/W), higher avalanche ruggedness (800 mJ vs. ≤520 mJ), and lower conduction loss-making it optimal for high-reliability, high-power-density server and industrial power stages where thermal headroom and transient robustness are critical.

Availability

PSMN3R0-60ES is available at Aetrix Electronics and suitable for server power supplies, motor control systems, and DC-to-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for PSMN3R0-60ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for high-efficiency, thermally demanding applications in communications infrastructure, industrial automation, and enterprise computing power systems.

FAQ

What is the maximum continuous drain current for PSMN3R0-60ES at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 83.4 A, as specified in Table 5 (Limiting values). This value reflects thermal derating due to reduced heat transfer efficiency at elevated mounting temperatures and must be applied in thermal design calculations for sustained operation.

Is PSMN3R0-60ES suitable for use with 5 V gate drive?

No. PSMN3R0-60ES is a standard-level MOSFET with V_GS(th) of 2–4 V and is fully enhanced at V_GS = 10 V. At 5 V, R_DS(on) increases significantly (≥10 mΩ), causing excessive conduction loss and thermal runaway. It requires ≥8 V, preferably 10 V, gate drive for reliable operation.

How is the mounting base electrically connected in the I2PAK package?

The mounting base is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 (Pinning information) and Figure 18 (Package outline). This configuration provides a low-inductance, low-resistance path for both power conduction and thermal dissipation, requiring electrical isolation from other circuit nodes unless drain-referenced heatsinking is intended.

Does PSMN3R0-60ES have automotive qualification?

No. Per Nexperia's legal disclaimers (Section 12.3), this device is explicitly labeled as non-automotive qualified. It has not undergone AEC-Q101 testing or been validated for automotive temperature cycling, humidity, or vibration requirements. Use in automotive applications is unsupported and at the customer's sole risk.