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Nexperia USA Inc. PSMN3R0-60PS,127

Part No.:
PSMN3R0-60PS,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixPSMN3R0-60PS,127.pdf
Description:
MOSFET N-CH 60V 100A TO220AB
Quantity:
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Shipping:
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Inventory:7,737

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Product details

Overview

PSMN3R0-60PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 60 V VDS, 3.0 mΩ RDS(on) at 10 VGS/25 A/25 °C, 100 A continuous drain current at Tmb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in industrial DC-DC converters and server power supplies.

For engineers reviewing the PSMN3R0-60PS datasheet, PSMN3R0-60PS pinout, PSMN3R0-60PS application, or PSMN3R0-60PS equivalent, key selection criteria include its low RDS(on) stability over temperature, unclamped avalanche energy rating of 800 mJ, gate charge profile optimized for standard 10 V drive, and thermal resistance of 0.3–0.49 K/W from junction to mounting base.

Technical Context

This MOSFET employs planar silicon technology with an integrated body diode and is designed for hard-switched, non-synchronous topologies. Its gate threshold voltage (2–4 V typ.) enables compatibility with standard logic-level and microcontroller-driven gate drivers without level-shifting.

The device features a drain-connected mounting base for direct heatsink attachment, enabling efficient thermal management in high-power applications. Its dynamic parameters-including 130 nC total gate charge, 28 nC QGD, and 8079 pF Ciss-support stable switching performance up to several hundred kHz in power conversion stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V bus systems with margin.
RDS(on)2.4–3.0 mΩ @ 10 VGS, 25 A, 25 °C - Enables <0.2 W conduction loss at 50 A, critical for high-efficiency server PSUs.
ID (cont.)100 A @ Tmb = 25 °C - Continuous current limited by TO-220AB package thermal capacity, not die capability.
EAS800 mJ unclamped avalanche - Supports robustness against inductive turn-off transients in motor control and relay driving.
Rth(j-mb)0.3–0.49 K/W - Low thermal resistance allows >200 W dissipation with modest heatsinking, verified per Figure 2.
QG(tot)130 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers.
VGS(th)2–4 V @ 1 mA - Ensures reliable turn-on with 3.3 V or 5 V logic; remains ≥1 V even at 175 °C for hot-start reliability.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3 leads; mounting base electrically connected to drain. Dimensions per IEC/JEDEC SC-46 outline; 16.0 × 10.3 × 4.7 mm body; 3.3 mm lead pitch.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; requires ≤20 V absolute max; 1.1 Ω internal gate resistance limits ringing.
2 (D)DrainMain high-side current path; electrically tied to mounting base for low-inductance heatsink connection.
3 (S)SourceReturn path for load current; referenced for gate drive; forms source-drain diode anode.
Mounting BaseDrain (common)Provides mechanical attachment and primary thermal path; must be insulated if drain is not at chassis ground.

Key Features

FeatureDesign Value
Low RDS(on) at high TjRDS(on) rises only to 7.2 mΩ at 175 °C - maintains efficiency in thermally constrained enclosures.
Standard-level gate driveOperates fully enhanced with 10 VGS - eliminates need for gate boosters in 12 V control rails.
Avalanche-rated800 mJ EAS - withstands repetitive inductive switching stress without derating in motor H-bridge snubbers.
High-temperature qualificationRated for 175 °C Tj - supports operation in sealed industrial cabinets or near hot components.
Integrated body diodeVSD = 0.88–1.2 V @ 25 A - enables freewheeling in buck converters; trr = 54 ns minimizes recovery loss.

Applications

DC-DC ConvertersServer Power Supplies

Use Scenario: Primary-side synchronous rectification in 48 V input telecom DC-DC modules delivering 12 V/100 A output.

IC Role / Device Role / Timing Role: High-side power switch operating at 200–300 kHz with 50% duty cycle; handles peak currents up to 120 A.

Use Value: 3.0 mΩ RDS(on) reduces conduction loss to <1.8 W at full load, improving system efficiency by 0.8% versus 4.5 mΩ alternatives.

Use Scenario: 12 V VRM output stage in dual-socket x86 server motherboards with transient load steps up to 200 A/µs.

IC Role / Device Role / Timing Role: Low-side switching element in multiphase buck converter; driven by dedicated gate controller with 1.5 Ω external resistor.

Use Value: 130 nC QG and 28 nC QGD enable clean 30 ns rise/fall times, minimizing shoot-through risk during phase interleaving.

Motor ControlLoad Switching

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for HVAC blowers, handling 30 A RMS continuous current.

IC Role / Device Role / Timing Role: Upper-arm switch subjected to inductive flyback during PWM commutation; operates with 10 kHz PWM frequency.

Use Value: 800 mJ unclamped avalanche energy absorbs worst-case inductive kick without clamping diodes, reducing BOM count by one component per phase.

Use Scenario: Hot-swap protection and inrush limiting for 48 V backplane distribution in industrial PLC racks.

IC Role / Device Role / Timing Role: Single-pole main power switch controlled via microcontroller GPIO; activated after soft-start sequencing completes.

Use Value: 100 A continuous rating and 824 A pulsed capability support 10× inrush surges while maintaining <100 mV drop across RDS(on).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404PBFHigher RDS(on) (4.7 mΩ), lower VDS (40 V), same TO-220AB packageLimited to ≤36 V systems; less suitable for 48 V server railsSelect when cost sensitivity outweighs efficiency needs and voltage margin is sufficient.
STP100N6F6Lower RDS(on) (2.1 mΩ), higher QG (160 nC), same 60 V ratingRequires stronger gate driver; better for low-frequency, high-current loadsPrefer for motor drives where switching loss is secondary to conduction loss.

Compared with IRF1404PBF and STP100N6F6, PSMN3R0-60PS delivers optimal balance: lowest gate charge among 3 mΩ-class 60 V devices, superior thermal resistance, and guaranteed 175 °C operation-making it ideal for space-constrained, high-reliability industrial power stages.

Availability

PSMN3R0-60PS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for PSMN3R0-60PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and communications power applications where robustness, consistency, and thermal resilience are prioritized over ultra-low gate charge or trench architecture.

FAQ

What is the maximum safe operating temperature for PSMN3R0-60PS?

The device is qualified for continuous operation up to 175 °C junction temperature (Tj) and 175 °C storage temperature. Mounting base temperature (Tmb) must remain ≤100 °C for 83.4 A continuous current rating per Table 4; derating applies above that point using Figure 1. Thermal design must account for Rth(j-mb) = 0.3–0.49 K/W.

Can PSMN3R0-60PS be used with 5 V gate drive?

No-it is a standard-level MOSFET requiring ≥10 VGS for full enhancement. At 5 VGS, RDS(on) exceeds 15 mΩ (per transfer curve Fig 7), increasing conduction loss 5× and risking thermal runaway at high current. Use only with 10–15 V gate drive sources compliant with ±20 V VGS limit.

Is the mounting base electrically isolated?

No-the mounting base is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 and Figure 18. When mounted to a heatsink, electrical isolation (e.g., mica washer + shoulder washer) is mandatory unless the heatsink is at drain potential. Failure to isolate risks short-circuiting the drain node to chassis ground.

Does PSMN3R0-60PS have avalanche capability, and how is it tested?

Yes-its non-repetitive drain-source avalanche energy (EAS) is rated at 800 mJ under specified conditions: VGS = 10 V, Tj(init) = 25 °C, ID = 100 A, Vsup ≤60 V, RGS = 50 Ω, unclamped inductive load. This rating is validated per JEDEC JESD24-11 and reflects single-event ruggedness-not repetitive operation.

PSMN3R0-60PS,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8079 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
306W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

PSMN3R0-60PS,127 FAQ

1.How can I place an order for PSMN3R0-60PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R0-60PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R0-60PS,127 reliable?

The price and inventory of PSMN3R0-60PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R0-60PS,127 is usually 5 days.

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PSMN3R0-60PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R0-60PS,127 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for PSMN3R0-60PS,127?

For technical support, including PSMN3R0-60PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R0-60PS,127 requirements.

6.How does Aetrix verify that PSMN3R0-60PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN3R0-60PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R0-60PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN3R0-60PS,127?

All PSMN3R0-60PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R0-60PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R0-60PS,127 part is unused and in its original packaging.

Return procedure for PSMN3R0-60PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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