Nexperia USA Inc. PSMN3R0-60PS,127
- Part No.:
- PSMN3R0-60PS,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PSMN3R0-60PS,127.pdf
- Description:
- MOSFET N-CH 60V 100A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,737
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Product details
Overview
PSMN3R0-60PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 60 V VDS, 3.0 mΩ RDS(on) at 10 VGS/25 A/25 °C, 100 A continuous drain current at Tmb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in industrial DC-DC converters and server power supplies.
For engineers reviewing the PSMN3R0-60PS datasheet, PSMN3R0-60PS pinout, PSMN3R0-60PS application, or PSMN3R0-60PS equivalent, key selection criteria include its low RDS(on) stability over temperature, unclamped avalanche energy rating of 800 mJ, gate charge profile optimized for standard 10 V drive, and thermal resistance of 0.3–0.49 K/W from junction to mounting base.
Technical Context
This MOSFET employs planar silicon technology with an integrated body diode and is designed for hard-switched, non-synchronous topologies. Its gate threshold voltage (2–4 V typ.) enables compatibility with standard logic-level and microcontroller-driven gate drivers without level-shifting.
The device features a drain-connected mounting base for direct heatsink attachment, enabling efficient thermal management in high-power applications. Its dynamic parameters-including 130 nC total gate charge, 28 nC QGD, and 8079 pF Ciss-support stable switching performance up to several hundred kHz in power conversion stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V bus systems with margin. |
| RDS(on) | 2.4–3.0 mΩ @ 10 VGS, 25 A, 25 °C - Enables <0.2 W conduction loss at 50 A, critical for high-efficiency server PSUs. |
| ID (cont.) | 100 A @ Tmb = 25 °C - Continuous current limited by TO-220AB package thermal capacity, not die capability. |
| EAS | 800 mJ unclamped avalanche - Supports robustness against inductive turn-off transients in motor control and relay driving. |
| Rth(j-mb) | 0.3–0.49 K/W - Low thermal resistance allows >200 W dissipation with modest heatsinking, verified per Figure 2. |
| QG(tot) | 130 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers. |
| VGS(th) | 2–4 V @ 1 mA - Ensures reliable turn-on with 3.3 V or 5 V logic; remains ≥1 V even at 175 °C for hot-start reliability. |
Pinout & Package
TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3 leads; mounting base electrically connected to drain. Dimensions per IEC/JEDEC SC-46 outline; 16.0 × 10.3 × 4.7 mm body; 3.3 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤20 V absolute max; 1.1 Ω internal gate resistance limits ringing. |
| 2 (D) | Drain | Main high-side current path; electrically tied to mounting base for low-inductance heatsink connection. |
| 3 (S) | Source | Return path for load current; referenced for gate drive; forms source-drain diode anode. |
| Mounting Base | Drain (common) | Provides mechanical attachment and primary thermal path; must be insulated if drain is not at chassis ground. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at high Tj | RDS(on) rises only to 7.2 mΩ at 175 °C - maintains efficiency in thermally constrained enclosures. |
| Standard-level gate drive | Operates fully enhanced with 10 VGS - eliminates need for gate boosters in 12 V control rails. |
| Avalanche-rated | 800 mJ EAS - withstands repetitive inductive switching stress without derating in motor H-bridge snubbers. |
| High-temperature qualification | Rated for 175 °C Tj - supports operation in sealed industrial cabinets or near hot components. |
| Integrated body diode | VSD = 0.88–1.2 V @ 25 A - enables freewheeling in buck converters; trr = 54 ns minimizes recovery loss. |
Applications
| DC-DC Converters | Server Power Supplies |
|---|---|
Use Scenario: Primary-side synchronous rectification in 48 V input telecom DC-DC modules delivering 12 V/100 A output. IC Role / Device Role / Timing Role: High-side power switch operating at 200–300 kHz with 50% duty cycle; handles peak currents up to 120 A. Use Value: 3.0 mΩ RDS(on) reduces conduction loss to <1.8 W at full load, improving system efficiency by 0.8% versus 4.5 mΩ alternatives. | Use Scenario: 12 V VRM output stage in dual-socket x86 server motherboards with transient load steps up to 200 A/µs. IC Role / Device Role / Timing Role: Low-side switching element in multiphase buck converter; driven by dedicated gate controller with 1.5 Ω external resistor. Use Value: 130 nC QG and 28 nC QGD enable clean 30 ns rise/fall times, minimizing shoot-through risk during phase interleaving. |
| Motor Control | Load Switching |
Use Scenario: Half-bridge leg in 24 V BLDC motor driver for HVAC blowers, handling 30 A RMS continuous current. IC Role / Device Role / Timing Role: Upper-arm switch subjected to inductive flyback during PWM commutation; operates with 10 kHz PWM frequency. Use Value: 800 mJ unclamped avalanche energy absorbs worst-case inductive kick without clamping diodes, reducing BOM count by one component per phase. | Use Scenario: Hot-swap protection and inrush limiting for 48 V backplane distribution in industrial PLC racks. IC Role / Device Role / Timing Role: Single-pole main power switch controlled via microcontroller GPIO; activated after soft-start sequencing completes. Use Value: 100 A continuous rating and 824 A pulsed capability support 10× inrush surges while maintaining <100 mV drop across RDS(on). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | Higher RDS(on) (4.7 mΩ), lower VDS (40 V), same TO-220AB package | Limited to ≤36 V systems; less suitable for 48 V server rails | Select when cost sensitivity outweighs efficiency needs and voltage margin is sufficient. |
| STP100N6F6 | Lower RDS(on) (2.1 mΩ), higher QG (160 nC), same 60 V rating | Requires stronger gate driver; better for low-frequency, high-current loads | Prefer for motor drives where switching loss is secondary to conduction loss. |
Compared with IRF1404PBF and STP100N6F6, PSMN3R0-60PS delivers optimal balance: lowest gate charge among 3 mΩ-class 60 V devices, superior thermal resistance, and guaranteed 175 °C operation-making it ideal for space-constrained, high-reliability industrial power stages.
Availability
PSMN3R0-60PS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.
Supply support for PSMN3R0-60PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.
This part belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and communications power applications where robustness, consistency, and thermal resilience are prioritized over ultra-low gate charge or trench architecture.
FAQ
What is the maximum safe operating temperature for PSMN3R0-60PS?
The device is qualified for continuous operation up to 175 °C junction temperature (Tj) and 175 °C storage temperature. Mounting base temperature (Tmb) must remain ≤100 °C for 83.4 A continuous current rating per Table 4; derating applies above that point using Figure 1. Thermal design must account for Rth(j-mb) = 0.3–0.49 K/W.
Can PSMN3R0-60PS be used with 5 V gate drive?
No-it is a standard-level MOSFET requiring ≥10 VGS for full enhancement. At 5 VGS, RDS(on) exceeds 15 mΩ (per transfer curve Fig 7), increasing conduction loss 5× and risking thermal runaway at high current. Use only with 10–15 V gate drive sources compliant with ±20 V VGS limit.
Is the mounting base electrically isolated?
No-the mounting base is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 and Figure 18. When mounted to a heatsink, electrical isolation (e.g., mica washer + shoulder washer) is mandatory unless the heatsink is at drain potential. Failure to isolate risks short-circuiting the drain node to chassis ground.
Does PSMN3R0-60PS have avalanche capability, and how is it tested?
Yes-its non-repetitive drain-source avalanche energy (EAS) is rated at 800 mJ under specified conditions: VGS = 10 V, Tj(init) = 25 °C, ID = 100 A, Vsup ≤60 V, RGS = 50 Ω, unclamped inductive load. This rating is validated per JEDEC JESD24-11 and reflects single-event ruggedness-not repetitive operation.
PSMN3R0-60PS,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8079 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PSMN3R0-60PS,127 FAQ
1.How can I place an order for PSMN3R0-60PS,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN3R0-60PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN3R0-60PS,127 reliable?
The price and inventory of PSMN3R0-60PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R0-60PS,127 is usually 5 days.
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5.How can I obtain technical support or documentation for PSMN3R0-60PS,127?
For technical support, including PSMN3R0-60PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R0-60PS,127 requirements.
6.How does Aetrix verify that PSMN3R0-60PS,127 is sourced from the original manufacturer or authorized distributors?
All PSMN3R0-60PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R0-60PS,127 meets industry standards.
7.What is the process for return or replacement of PSMN3R0-60PS,127?
All PSMN3R0-60PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R0-60PS,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN3R0-60PS,127 part is unused and in its original packaging.
Return procedure for PSMN3R0-60PS,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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