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Nexperia USA Inc. PSMN3R2-30YLC,115

Part No.:
PSMN3R2-30YLC,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixPSMN3R2-30YLC,115.pdf
Description:
MOSFET N-CH 30V 100A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,028

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Product details

Overview

PSMN3R2-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V VDS, 3.5 mΩ RDS(on) at VGS = 10 V and 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at Tmb = 25 °C and supports high-efficiency DC-DC conversion with ultra-low QG (14.2 nC @ 4.5 V) and QGD (4.1 nC).

For engineers reviewing the PSMN3R2-30YLC datasheet, PSMN3R2-30YLC pinout, PSMN3R2-30YLC application, or PSMN3R2-30YLC equivalent, this device is selected for high-current load switching, synchronous rectification, and power OR-ing where low gate drive voltage (4.5 V), thermal robustness, and fast switching with minimal switching loss are critical.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction technology, optimized for 4.5 V gate drive and delivering ultra-low gate charge parameters (QG(tot) = 14.2 nC, QGD = 4.1 nC) to minimize turn-on/turn-off energy loss. Its LFPAK package provides low parasitic inductance and resistance while enabling direct mounting-base thermal conduction (Rth(j-mb) = 1.46 K/W).

The device features a 1.53 V typical gate threshold voltage (VGS(th)) at 25 °C and maintains stable RDS(on) up to 150 °C (7.45 mΩ max @ VGS = 4.5 V), supporting reliable operation in industrial and server power environments with wide ambient temperature ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V and 30 V bus systems.
RDS(on) @ 4.5 V 3.75 mΩ (typ) - Enables efficient switching at logic-level gate drive without external level-shifting circuitry.
ID (continuous) 100 A @ Tmb = 25 °C - High current capability supports single-device solutions in high-power DC-DC and OR-ing applications.
QG(tot) 14.2 nC @ VGS = 4.5 V - Low total gate charge reduces driver power demand and enables high-frequency PWM operation.
Rth(j-mb) 1.46 K/W - Low junction-to-mounting-base thermal resistance allows direct heatsinking for high-power density designs.
VGS(th) 1.53 V (typ) - Ensures strong turn-on margin with standard 3.3 V or 5 V logic controllers.
QGD 4.1 nC - Minimizes Miller-induced switching delay and dv/dt-induced false turn-on in hard-switched topologies.

Pinout & Package

Package: LFPAK (SOT669), also known as Power-SO8 - a plastic single-ended surface-mounted package with exposed mounting base connected to drain, optimized for high-current, low-inductance PCB layouts and direct thermal transfer to heatsink or copper plane.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4 Gate (G) Single gate input; designed for low-impedance drive to minimize ringing and ensure clean switching transitions.
Mounting base (mb) Drain (D) Exposed copper pad electrically and thermally connected to drain; serves as primary heat path and high-current drain connection.

Key Features

Feature Design Value
Logic-level gate drive compatibility Guaranteed RDS(on) ≤ 4.55 mΩ at VGS = 4.5 V, enabling direct interface with 3.3 V/5 V microcontrollers and gate drivers.
NextPower Superjunction architecture Delivers 3.5 mΩ RDS(on) at 10 V with ultra-low QOSS (12.2 nC), improving light-load and full-load efficiency simultaneously.
175 °C qualified junction temperature Rated for continuous operation up to Tj = 175 °C, supporting high-reliability deployment in industrial and server power supplies.
Low parasitic inductance design LFPAK layout minimizes source and gate loop inductance, reducing voltage overshoot and EMI in high-speed switching.
Optimized for synchronous rectification Fast reverse recovery (trr = 27 ns) and low VSD (0.8–1.1 V) enable high-efficiency replacement of Schottky diodes in secondary-side rectification.

Applications

DC-DC Converters Server Power Supplies

Use Scenario: Primary-side switch in 48 V–12 V isolated buck-derived converters for AI accelerators and CPU VRMs.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–600 kHz with 4.5 V gate drive from integrated controller.

Use Value: 3.75 mΩ RDS(on) and 14.2 nC QG reduce conduction and switching losses, enabling >95% efficiency at 80 A output.

Use Scenario: 12 V intermediate bus distribution in multi-rail server PSUs with hot-swap and OR-ing requirements.

IC Role / Device Role / Timing Role: Load switch and power path controller managing redundant 12 V inputs with fast fault response.

Use Value: 100 A continuous rating and 482 A pulsed current support handle inrush and transient loads without derating.

Sync Rectifier Power OR-ing

Use Scenario: Secondary-side rectification in LLC resonant converters for GPU power delivery.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by dedicated gate controller with adaptive dead-time management.

Use Value: 27 ns trr and 19.5 nC Qr minimize body-diode conduction loss and reverse recovery stress.

Use Scenario: Redundant 48 V input combining in telecom rectifier modules and edge computing power shelves.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with low forward drop and fast turn-off.

Use Value: 0.8 V VSD and 3.5 mΩ RDS(on) cut forward voltage drop by >60% vs. Schottky diodes, reducing thermal footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRL3803PBF Higher RDS(on) (3.5 mΩ @ 10 V, but 6.5 mΩ @ 4.5 V); TO-220 package; no mounting-base thermal path. Limited to lower-current, non-compact designs due to larger footprint and higher thermal resistance (Rth(j-c) ≈ 1.5 K/W). Choose only when through-hole assembly or legacy board compatibility is required; not suitable for high-density server boards.
STL220N3LLH6 Similar RDS(on) (3.2 mΩ @ 4.5 V), but in PowerFLAT 5x6 package; lower QG (12.5 nC), yet unqualified above 150 °C. Not rated for 175 °C operation; unsuitable for extended-life industrial or high-ambient server applications. Select for cost-sensitive consumer-grade DC-DC where junction temperature remains below 150 °C and compactness is prioritized over long-term reliability.

Compared with IRL3803PBF and STL220N3LLH6, PSMN3R2-30YLC uniquely combines 175 °C qualification, ultra-low 4.5 V RDS(on), and LFPAK's superior thermal performance-making it the only option validated for mission-critical, high-power-density server and industrial power stages requiring sustained thermal margin.

Availability

PSMN3R2-30YLC is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and power OR-ing applications requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp.

Supply support for PSMN3R2-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in industrial, communications, and datacenter infrastructure where thermal resilience and low gate-drive dependency are essential.

FAQ

What is the maximum continuous drain current for PSMN3R2-30YLC at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is derated to 85 A (per Table 5 limiting values). This reflects thermal constraints of the LFPAK package under real-world heatsink conditions, not silicon limitation. Derating follows the normalized curve in Figure 2, where power dissipation drops to ~65% of its 25 °C value.

Can PSMN3R2-30YLC be used as a replacement for a standard 30 V Schottky diode in synchronous rectification?

Yes-it is explicitly qualified for synchronous rectifier use, with 27 ns reverse recovery time, 19.5 nC recovered charge, and 0.8–1.1 V source-drain forward voltage. Its low RDS(on) yields lower conduction loss than Schottky diodes above ~5 A, and its controlled turn-off eliminates reverse recovery spikes common in diode-based designs.

Does the mounting base (drain) require electrical isolation from the PCB ground plane?

Yes-the mounting base is internally connected to the drain terminal (per Table 2 pinning), so it must be electrically isolated from any other net unless drain is referenced to system ground. Standard practice uses thermally conductive but electrically isolating pads (e.g., ceramic-filled thermal interface material) when mounting to grounded heatsinks.

Is PSMN3R2-30YLC automotive-qualified?

No-this part is not automotive-qualified. The datasheet explicitly states in Section 10.3 that "non-automotive qualified products" are not tested per AEC-Q101 and lack automotive-specific reliability validation. It is intended for industrial, communications, and domestic equipment per Section 1.1.

PSMN3R2-30YLC,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
29.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2081 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
92W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

PSMN3R2-30YLC,115 FAQ

1.How can I place an order for PSMN3R2-30YLC,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R2-30YLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R2-30YLC,115 reliable?

The price and inventory of PSMN3R2-30YLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R2-30YLC,115 is usually 5 days.

3.What payment methods are accepted for PSMN3R2-30YLC,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R2-30YLC,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R2-30YLC,115?

PSMN3R2-30YLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R2-30YLC,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R2-30YLC,115?

For technical support, including PSMN3R2-30YLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R2-30YLC,115 requirements.

6.How does Aetrix verify that PSMN3R2-30YLC,115 is sourced from the original manufacturer or authorized distributors?

All PSMN3R2-30YLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R2-30YLC,115 meets industry standards.

7.What is the process for return or replacement of PSMN3R2-30YLC,115?

All PSMN3R2-30YLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R2-30YLC,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R2-30YLC,115 part is unused and in its original packaging.

Return procedure for PSMN3R2-30YLC,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN3R2-30YLC,115 Tags

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