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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R2-40YLBX

Name: PSMN3R2-40YLBX
Brand: Nexperia USA Inc.
SKU: PSMN3R2-40YLBX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R2-40YLBX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R2-40YLBX.pdf

Description:: PSMN3R2-40YLB/SOT669/LFPAK

Quantity:: RFQ Add To RFQ list

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Inventory:1,500

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Product details

Overview

PSMN3R2-40YLBX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 3.3 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 120 A continuous drain current at T_mb = 25 °C. It employs NextPowerS3 Schottky-Plus technology for soft body-diode recovery and low EMI, targeting high-efficiency DC-DC converters and motor control.

For engineers reviewing the PSMN3R2-40YLBX datasheet, PSMN3R2-40YLBX pinout, PSMN3R2-40YLBX application, or PSMN3R2-40YLBX equivalent, key selection criteria include its 4.5 V gate drive compatibility, 175 °C junction-rated LFPAK56 package, avalanche ruggedness (100% tested I_AS = 120 A), and low Q_rr/Q_G for high-frequency switching efficiency.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture optimized for fast switching with soft reverse-recovery characteristics-tr_r = 24 ns and Q_r = 14 nC-enabling reduced voltage overshoot and system-level EMI suppression. Its Schottky-Plus body diode delivers V_SD = 0.8–1.0 V @ I_S = 25 A and low leakage (I_DSS ≤ 1 µA @ 125 °C).

The device features a copper-clip die attach and exposed mounting base (drain-connected) for ultra-low thermal resistance (R_th(j-mb) = 1.18 K/W typ.) and high board-level reliability. Gate threshold voltage is tightly controlled (V_GS(th) = 1.35–2.05 V), with negative temperature coefficient (−4.7 mV/K) enabling stable parallel operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - supports 36 V nominal bus systems with 10% margin for transients.
R_DS(on) @ V_GS = 10 V	2.9–3.3 mΩ typ./max @ 25 °C - enables <1 W conduction loss at 120 A, critical for high-current load switches.
I_D continuous	120 A @ T_mb = 25 °C - validated under real-world thermal conditions, not just silicon-limited rating.
Q_G(tot)	12–27 nC @ V_GS = 4.5 V - low gate charge reduces driver power and enables efficient 500 kHz+ PWM operation.
Q_rr	14 nC - minimized reverse recovery charge cuts diode switching losses and dv/dt-induced shoot-through risk.
T_j max	175 °C - qualified for extended industrial and automotive-adjacent environments without derating.
R_th(j-mb)	1.18 K/W typ. - enables direct heatsinking via PCB copper pour or external heatsink on mounting base.

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with copper-clip construction, solder die attach, and an exposed metal mounting base (drain-connected). It supports wave and reflow soldering, offers visual solder-joint inspection, and achieves low parasitic inductance/resistance for high-speed switching.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source leads reduce bond-wire inductance and improve current sharing; connected internally to source metallization.
4	Gate (G)	Single gate input with low RG (0.3–1.8 Ω) for precise turn-on/turn-off timing control.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; serves as primary heat path and high-current return node.

Key Features

Feature	Design Value
NextPowerS3 Schottky-Plus body diode	Soft recovery (trr = 24 ns), low V_SD (0.8 V), and low Q_r (14 nC) eliminate need for external freewheeling diodes in synchronous rectifiers.
Avalanche ruggedness	100% tested I_AS = 120 A - ensures robustness against inductive switching stress without external snubbers.
EMC-optimized layout	Up to 6 dB lower radiated emissions vs. standard TrenchMOS - reduces need for filtering components in EMI-critical applications.
4.5 V logic-level gate drive	V_GS(th) = 1.35–2.05 V with −4.7 mV/K tempco - compatible with 3.3 V and 5 V microcontrollers without level-shifting.
Strong SOA in linear mode	Rated for sustained operation in active region (e.g., eFuse, hot-swap) with defined safe operating area up to 100 µs pulses.

Applications

DC-DC Converters

Brushless DC Motor Control

Use Scenario: High-current buck converter in server VRMs or telecom power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch handling peak currents >100 A with minimal conduction and switching loss.

Use Value: Low R_DS(on) and Q_G directly reduce power loss and thermal footprint; Schottky-Plus diode eliminates reverse-recovery spikes during dead-time.

Use Scenario: Three-phase inverter stage in collaborative robot joint drives requiring compact, reliable power stages.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack inverter topology, commutating motor phase currents up to 120 A RMS.

Use Value: 175 °C rating and strong SOA allow operation under high ambient temperatures and short-circuit conditions; soft diode recovery prevents shoot-through during PWM transitions.

Battery Isolation

Industrial eFuse

Use Scenario: Bidirectional battery disconnect in energy storage systems with fault detection and automatic isolation.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for polarity-insensitive isolation, controlled by protection IC.

Use Value: Low V_GS(th) enables reliable turn-on with standard logic; avalanche rating handles inductive kickback during sudden disconnection.

Use Scenario: Programmable overcurrent protection in programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: Main current-handling switch in active eFuse circuit, responding to fault signals within microseconds.

Use Value: Linear-mode SOA rating and 175 °C junction capability support sustained current limiting without thermal runaway; low R_DS(on) minimizes voltage drop during normal operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V, 2.6 mΩ @ 10 V, but only rated to 150 A @ T_c = 25 °C; no avalanche testing specified; TO-252 package.	Lacks integrated mounting-base thermal path and Schottky-Plus diode; requires external heatsink and freewheeling diode.	Prefer PSMN3R2-40YLBX where board-level thermal management, EMI reduction, or diode-less operation is required.
Vishay SiR626DP	40 V, 3.0 mΩ @ 10 V, 120 A, PowerPAK SO-8; Q_G = 22 nC @ 4.5 V; no published Q_rr or avalanche test data.	Higher Q_rr and unverified avalanche performance limit suitability in high-reliability or high-dv/dt environments.	PSMN3R2-40YLBX offers verified ruggedness, lower EMI, and superior thermal interface for space-constrained designs.

Compared with IPP026N04L and SiR626DP, PSMN3R2-40YLBX uniquely combines 100% avalanche testing, Schottky-Plus soft recovery, and LFPAK56's low-inductance mounting base-making it optimal for high-density, high-reliability power stages where thermal, EMI, and fault robustness are co-constrained.

Availability

PSMN3R2-40YLBX is available at Aetrix Electronics and suitable for industrial motor control, battery management systems, and high-efficiency DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN3R2-40YLBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in power MOSFETs, ESD protection, and logic ICs.

This device belongs to the NextPowerS3 Schottky-Plus series, engineered specifically for high-efficiency, high-power-density switching applications demanding low EMI, robust avalanche behavior, and simplified thermal design.

FAQ

What is the maximum continuous drain current for PSMN3R2-40YLBX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 95 A per Figure 2 of the datasheet. This derating reflects real thermal limits of the LFPAK56 package under practical PCB thermal conditions-not theoretical silicon capability-and aligns with validated application testing.

Does PSMN3R2-40YLBX require a gate resistor for stability in high-frequency switching?

Yes-a gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's low gate resistance (0.3–1.8 Ω) and fast switching (tr = 21 ns, tf = 12 ns) make external damping essential for clean edges and EMI control.

Can PSMN3R2-40YLBX be used in parallel configurations?

Yes-its negative V_GS(th) temperature coefficient (−4.7 mV/K) promotes inherent current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared thermal mass on the mounting base to maintain uniform junction temperatures.

Is the mounting base electrically isolated from the PCB in standard assembly?

No-the mounting base is electrically connected to the drain terminal and must be routed as a high-current drain node. It is not insulated; isolation requires either a non-conductive thermal interface material or mechanical separation from grounded copper planes.

PSMN3R2-40YLBX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4211 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R2-40YLBX FAQ

1.How can I place an order for PSMN3R2-40YLBX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R2-40YLBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R2-40YLBX reliable?

The price and inventory of PSMN3R2-40YLBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R2-40YLBX is usually 5 days.

3.What payment methods are accepted for PSMN3R2-40YLBX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R2-40YLBX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R2-40YLBX?

PSMN3R2-40YLBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R2-40YLBX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R2-40YLBX?

For technical support, including PSMN3R2-40YLBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R2-40YLBX requirements.

6.How does Aetrix verify that PSMN3R2-40YLBX is sourced from the original manufacturer or authorized distributors?

All PSMN3R2-40YLBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R2-40YLBX meets industry standards.

7.What is the process for return or replacement of PSMN3R2-40YLBX?

All PSMN3R2-40YLBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R2-40YLBX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R2-40YLBX part is unused and in its original packaging.

Return procedure for PSMN3R2-40YLBX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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