Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R2-40YLDX

Name: PSMN3R2-40YLDX
Brand: Nexperia USA Inc.
SKU: PSMN3R2-40YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN3R2-40YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R2-40YLDX.pdf

Description:: MOSFET N-CH 40V 120A LFPAK56

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,828

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN3R2-40YLD from Nexperia is a logic-level N-channel enhancement-mode MOSFET designed for high-current, high-efficiency power switching in the drain-source path of DC-DC converters, synchronous rectifiers, and battery protection circuits. It delivers 120 A continuous drain current at T_mb = 25 °C, 3.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and operates up to 175 °C junction temperature in the LFPAK56 (SOT669) package.

For engineers reviewing the PSMN3R2-40YLD datasheet, PSMN3R2-40YLD pinout, PSMN3R2-40YLD application, or PSMN3R2-40YLD equivalent, key selection criteria include its 4.5 V gate drive optimization, Schottky-Plus body diode with 0.8–1.0 V V_SD and 25 ns trr, avalanche rating (IAS = 120 A), and low Q_G/Q_GD for fast, low-EMI switching in high-frequency power stages.

Technical Context

This MOSFET employs Nexperia's NextPower-S3 Superjunction trench technology, enabling strong linear-mode SOA and robust unclamped avalanche performance (E_AS = 243 mJ). Its gate threshold voltage (V_GS(th) = 1.35–2.05 V) and low 4.5 V turn-on capability support direct microcontroller or low-voltage driver interfacing without level-shifting.

The LFPAK56 package integrates copper-clip die attach and exposed mounting base (drain-connected), delivering R_th(j-mb) = 1.18 K/W and enabling wave soldering with visual joint inspection. The Schottky-Plus body diode provides soft reverse recovery (Q_r = 16 nC, t_b = 11 ns) and low leakage (I_DSS ≤ 1.2 µA at 125 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe blocking voltage in 12 V/24 V/36 V bus applications
R_DS(on)	3.3 mΩ max at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 120 A
I_D	120 A continuous at T_mb = 25 °C - validated for high-current synchronous rectification
Q_G	18 nC typical - supports efficient 500 kHz+ switching with low gate drive power
V_GS(th)	1.8 V typical - ensures reliable turn-on with 3.3 V or 4.5 V logic-level drivers
t_rr	25 ns - minimizes switching losses and voltage spikes during body-diode commutation
R_th(j-mb)	1.18 K/W - enables high-power dissipation with direct thermal coupling to PCB copper

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal surface-mount power package with copper-clip construction, qualified to 175 °C. It features an exposed mounting base (drain-connected) for low-inductance, low-resistance thermal and electrical paths, and supports both reflow and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source leads reduce package inductance and improve current sharing in high-dI/dt switching
4	Gate (G)	Single gate input optimized for low-Q_GD (4.3 nC typ) to suppress Miller-induced shoot-through
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat sink and high-current return path

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft recovery (t_b = 11 ns), low Q_r = 16 nC, and V_SD = 0.8–1.0 V reduce EMI and boost efficiency in synchronous rectification
Avalanche ruggedness	100% tested I_AS = 120 A - eliminates need for external snubbers in inductive load switching
Optimized for 4.5 V gate drive	R_DS(on) = 3.6–4.2 mΩ at V_GS = 4.5 V - enables direct interface with 3.3 V/5 V MCUs and gate drivers
High-reliability LFPAK56 package	R_th(j-mb) = 1.18 K/W and wave-solderable leads - simplifies thermal design and improves manufacturing yield vs. TO-252
Strong linear-mode SOA	Rated for 100 ms pulse at 40 V/30 A - supports robust operation in motor control and eFuse current limiting

Applications

High-Performance Synchronous Rectification

Brushless DC Motor Control

Use Scenario: Secondary-side switching in 48 V input, 12 V output isolated DC-DC converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 3.3 mΩ R_DS(on) and 25 ns t_rr cut conduction and switching losses by >30% versus standard MOSFETs, enabling higher power density.

Use Scenario: High-current phase-leg switching in 24 V BLDC motor drives for industrial automation.

IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in 3-phase inverter bridge, driven by gate driver ICs.

Use Value: Avalanche rating (IAS = 120 A) and strong SOA ensure reliability during PWM dead-time transitions and regenerative braking events.

Battery Protection

Load-Switch and eFuse

Use Scenario: Primary overcurrent and short-circuit protection in 3S Li-ion battery packs for power tools.

IC Role / Device Role / Timing Role: Main discharge FET controlled by battery management IC to interrupt fault currents within microseconds.

Use Value: 120 A continuous rating and 537 A pulsed ID_M allow rapid response to >50 A faults while sustaining safe operating area under transient stress.

Use Scenario: Hot-swap and inrush current limiting in 12 V/48 V industrial backplane power distribution.

IC Role / Device Role / Timing Role: Single-N eFuse element providing programmable current limit, overtemperature shutdown, and fault reporting.

Use Value: Low R_DS(on) (3.3 mΩ) minimizes voltage drop and self-heating during sustained 60–100 A loads, extending system uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	R_DS(on) = 3.6 mΩ @ 10 V, but uses TO-252 package (higher R_th(j-a), no wave-solderable leads)	Lacks LFPAK56's mounting-base thermal path and visual solder inspection capability	Prefer PSMN3R2-40YLD where board-level thermal management and manufacturability are critical
Vishay SiR626DP	Q_G = 24 nC (vs. 18 nC), R_DS(on) = 3.7 mΩ, and no 100% avalanche test	Higher gate charge increases driver loss; untested avalanche requires external clamping	Prefer PSMN3R2-40YLD for high-reliability 500 kHz+ SMPS where soft recovery and ruggedness are mandatory

Compared with IPP036N04L and SiR626DP, PSMN3R2-40YLD offers superior thermal performance via LFPAK56's mounting base, lower Q_G/Q_GD, and factory-verified avalanche capability-making it optimal for compact, high-efficiency, high-reliability power stages requiring minimal external protection.

Availability

PSMN3R2-40YLD is available at Aetrix Electronics and suitable for high-current synchronous rectification, brushless DC motor control, and battery protection applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN3R2-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced power MOSFETs and ESD protection solutions.

This device belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in server, industrial, and automotive-qualified systems-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for PSMN3R2-40YLD at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 95 A per Figure 2 of the datasheet. This reflects thermal limits imposed by PCB copper area and ambient conditions-not device failure-but must be validated against actual board layout and airflow.

Does PSMN3R2-40YLD support wave soldering, and what are the key process considerations?

Yes-the LFPAK56 package is explicitly qualified for wave soldering per Figure 19. Key requirements include using the recommended footprint (4.826 mm × 3.81 mm pad), maintaining 0.635 mm lead spacing, and controlling solder temperature to ≤260 °C peak for ≤10 seconds to avoid delamination or gate oxide stress.

How does the Schottky-Plus body diode differ from a standard MOSFET body diode in practical operation?

It delivers lower forward voltage (V_SD = 0.8–1.0 V), softer reverse recovery (t_b = 11 ns), and reduced recovered charge (Q_r = 16 nC), which cuts ringing, EMI, and cross-conduction losses in synchronous rectifier topologies-especially critical in high-frequency, high-current DC-DC converters.

Is PSMN3R2-40YLD automotive-qualified, and what is its temperature rating for industrial use?

No-it is not AEC-Q101 qualified. However, it is fully rated for industrial operation across –55 °C to +175 °C junction temperature, with 175 °C package qualification and 100% avalanche testing, making it suitable for demanding non-automotive applications like industrial motor drives and telecom power supplies.

PSMN3R2-40YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.05V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4103 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R2-40YLDX FAQ

1.How can I place an order for PSMN3R2-40YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R2-40YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R2-40YLDX reliable?

The price and inventory of PSMN3R2-40YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R2-40YLDX is usually 5 days.

3.What payment methods are accepted for PSMN3R2-40YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R2-40YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R2-40YLDX?

PSMN3R2-40YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R2-40YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R2-40YLDX?

For technical support, including PSMN3R2-40YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R2-40YLDX requirements.

6.How does Aetrix verify that PSMN3R2-40YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN3R2-40YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R2-40YLDX meets industry standards.

7.What is the process for return or replacement of PSMN3R2-40YLDX?

All PSMN3R2-40YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R2-40YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R2-40YLDX part is unused and in its original packaging.

Return procedure for PSMN3R2-40YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…