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Nexperia USA Inc. PSMN3R3-100SSFJ

Part No.:
PSMN3R3-100SSFJ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1235
Datasheet:
AetrixPSMN3R3-100SSFJ.pdf
Description:
NEXTPOWER 80/100V MOSFETS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:700

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Product details

Overview

PSMN3R3-100SSF from Nexperia is a 100 V, 3.3 mΩ RDS(on), 180 A continuous N-channel MOSFET in LFPAK88 (SOT1235) package, qualified to 175 °C junction temperature and optimized for high-efficiency switching in high-current DC-DC converters and motor drives.

For engineers reviewing the PSMN3R3-100SSF datasheet, PSMN3R3-100SSF pinout, PSMN3R3-100SSF application, or PSMN3R3-100SSF equivalent, key selection criteria include its low QG×RDS(on) figure of merit (106 nC × 3.3 mΩ), strong unclamped avalanche rating (478 mJ), and mounting-base thermal resistance (0.25 K/W).

Technical Context

This NextPower MOSFET employs a trench-gated superjunction structure enabling low on-resistance with fast switching dynamics. Its gate threshold voltage (2–4 V typ.) supports standard-level 10 V gate drive, and the integrated source-drain diode exhibits 46 nC recovered charge and 46 ns reverse recovery time at 25 °C.

The device features a thermally enhanced LFPAK88 package with drain-connected mounting base, delivering 341 W total power dissipation at Tmb = 25 °C and supporting pulsed peak current up to 848 A. Avalanche ruggedness is 100% production-tested per IEC 60134.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V maximum drain-source voltage - supports primary-side switching in 48 V and 60 V industrial DC-DC systems.
RDS(on) 3.3 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1.7 W conduction loss at 180 A continuous operation.
ID 180 A continuous drain current at Tmb = 25 °C - validated under application test conditions with thermal derating above 25 °C mounting base temperature.
QG(tot) 106 nC typical total gate charge - balances switching speed and gate driver power requirements in hard-switched topologies.
EAS 478 mJ non-repetitive avalanche energy - provides robustness against inductive turn-off transients without external snubbers.
Rth(j-mb) 0.25 K/W typical junction-to-mounting-base thermal resistance - enables direct heatsink attachment for high-power density designs.
Qr 46 nC source-drain diode recovered charge - reduces switching losses in synchronous rectification and half-bridge freewheeling.

Pinout & Package

LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package with 8 mm × 8 mm × 1.6 mm body, featuring an exposed copper mounting base electrically connected to the drain terminal for low-inductance, high-current routing and enhanced thermal transfer.

Pin/Terminal Circuit Role Design Meaning
1 G Gate input - accepts standard 10 V logic-level drive; 0.8 Ω typical gate resistance minimizes ringing.
2 S Source return path - internally bonded to two parallel source terminals (pins 2 and 3) for low-inductance current return.
3 S Source return path - redundant source connection improves current sharing and reduces package inductance.
4 mb Mounting base - electrically tied to drain; serves as primary thermal interface and high-current drain node.

Key Features

Feature Design Value
Low Qrr 46 nC recovered charge - reduces diode switching losses and EMI in synchronous rectifier applications.
High avalanche energy rating 478 mJ unclamped EAS - eliminates need for external avalanche protection in motor control and power supply clamping circuits.
Optimized FOM 106 nC × 3.3 mΩ = 349.8 nC·mΩ - delivers superior efficiency in high-frequency, high-current buck and full-bridge converters.
175 °C rated junction Full 180 A current capability maintained up to Tj = 175 °C - enables compact thermal design in sealed industrial enclosures.
RoHS-compliant LFPAK88 Halogen-free, lead-free construction with 260 °C peak soldering tolerance - compatible with standard reflow profiles and IPC-A-610 Class 3 assembly.

Applications

Synchronous Rectifier in AC-DC Primary-Side Switch in Isolated DC-DC

Use Scenario: Used as secondary-side switch in LLC resonant and active clamp forward converters delivering >1 kW output.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diodes to improve efficiency by 2–3% at full load.

Use Value: 3.3 mΩ RDS(on) and 46 nC Qr minimize conduction and reverse recovery losses under high dI/dt conditions.

Use Scenario: Primary-side high-side switch in 48 V–12 V isolated bidirectional DC-DC converters for server power distribution.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element operating at 100–300 kHz with hard switching.

Use Value: 100 V VDS rating and 848 A pulsed current support enable reliable operation during transient overloads.

BLDC Motor Control Battery Protection Circuit

Use Scenario: Half-bridge leg in 3-phase 48 V BLDC inverters for e-bikes and industrial pumps.

IC Role / Device Role / Timing Role: Power stage switch handling 150 A peak phase current with PWM commutation at 20–50 kHz.

Use Value: 175 °C qualification and 0.25 K/W Rth(j-mb) allow direct heatsink mounting without thermal interface pads.

Use Scenario: Main discharge/charge FET in 48 V Li-ion battery packs with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: High-reliability power switch performing rapid fault isolation during 100 A+ short events.

Use Value: 478 mJ EAS and 100% avalanche testing ensure survival during unclamped inductive interruption.

Availability

PSMN3R3-100SSF is available at Aetrix Electronics and suitable for high-current DC-DC conversion, BLDC motor drives, and battery protection systems requiring stable component supply across extended industrial temperature ranges.

Supply support for PSMN3R3-100SSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to the NextPower series - engineered specifically for high-efficiency, high-current switching applications where low RDS(on), robust avalanche capability, and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The datasheet specifies 150 A continuous drain current at Tmb = 100 °C (Fig. 2), reflecting thermal derating from the 180 A rating at 25 °C. This value is validated under real-world PCB thermal conditions using a 25.4 mm square copper pad on FR4.

Does PSMN3R3-100SSF require gate resistors for stability in hard-switched applications?

Yes - due to its low gate resistance (0.8 Ω typ.) and high dV/dt immunity, a 5 Ω external gate resistor is recommended (per Fig. 14 test condition) to dampen ringing and control switching speed, especially in full-bridge configurations with high stray inductance.

Can this MOSFET be used in paralleled configurations?

Yes - its positive RDS(on) temperature coefficient (Fig. 13) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use Kelvin source connections to maintain balance under dynamic load conditions.

Is the mounting base electrically isolated from other pins?

No - the mounting base (pin 4) is internally connected to the drain terminal. It must be electrically isolated from the PCB ground plane unless the drain node is at system ground potential; thermal interface material must be electrically insulating if isolation is required.

PSMN3R3-100SSFJ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOT-1235
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
180A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
159 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9940 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
341W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK88 (SOT1235)

PSMN3R3-100SSFJ FAQ

1.How can I place an order for PSMN3R3-100SSFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R3-100SSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R3-100SSFJ reliable?

The price and inventory of PSMN3R3-100SSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-100SSFJ is usually 5 days.

3.What payment methods are accepted for PSMN3R3-100SSFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R3-100SSFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R3-100SSFJ?

PSMN3R3-100SSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R3-100SSFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R3-100SSFJ?

For technical support, including PSMN3R3-100SSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-100SSFJ requirements.

6.How does Aetrix verify that PSMN3R3-100SSFJ is sourced from the original manufacturer or authorized distributors?

All PSMN3R3-100SSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-100SSFJ meets industry standards.

7.What is the process for return or replacement of PSMN3R3-100SSFJ?

All PSMN3R3-100SSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-100SSFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R3-100SSFJ part is unused and in its original packaging.

Return procedure for PSMN3R3-100SSFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN3R3-100SSFJ Tags

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