Nexperia USA Inc. PSMN3R3-100SSFJ
- Part No.:
- PSMN3R3-100SSFJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1235
- Datasheet:
-
PSMN3R3-100SSFJ.pdf
- Description:
- NEXTPOWER 80/100V MOSFETS
- Quantity:
- Payment:

- Shipping:

Inventory:700
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMN3R3-100SSF from Nexperia is a 100 V, 3.3 mΩ RDS(on), 180 A continuous N-channel MOSFET in LFPAK88 (SOT1235) package, qualified to 175 °C junction temperature and optimized for high-efficiency switching in high-current DC-DC converters and motor drives.
For engineers reviewing the PSMN3R3-100SSF datasheet, PSMN3R3-100SSF pinout, PSMN3R3-100SSF application, or PSMN3R3-100SSF equivalent, key selection criteria include its low QG×RDS(on) figure of merit (106 nC × 3.3 mΩ), strong unclamped avalanche rating (478 mJ), and mounting-base thermal resistance (0.25 K/W).
Technical Context
This NextPower MOSFET employs a trench-gated superjunction structure enabling low on-resistance with fast switching dynamics. Its gate threshold voltage (2–4 V typ.) supports standard-level 10 V gate drive, and the integrated source-drain diode exhibits 46 nC recovered charge and 46 ns reverse recovery time at 25 °C.
The device features a thermally enhanced LFPAK88 package with drain-connected mounting base, delivering 341 W total power dissipation at Tmb = 25 °C and supporting pulsed peak current up to 848 A. Avalanche ruggedness is 100% production-tested per IEC 60134.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum drain-source voltage - supports primary-side switching in 48 V and 60 V industrial DC-DC systems. |
| RDS(on) | 3.3 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1.7 W conduction loss at 180 A continuous operation. |
| ID | 180 A continuous drain current at Tmb = 25 °C - validated under application test conditions with thermal derating above 25 °C mounting base temperature. |
| QG(tot) | 106 nC typical total gate charge - balances switching speed and gate driver power requirements in hard-switched topologies. |
| EAS | 478 mJ non-repetitive avalanche energy - provides robustness against inductive turn-off transients without external snubbers. |
| Rth(j-mb) | 0.25 K/W typical junction-to-mounting-base thermal resistance - enables direct heatsink attachment for high-power density designs. |
| Qr | 46 nC source-drain diode recovered charge - reduces switching losses in synchronous rectification and half-bridge freewheeling. |
Pinout & Package
LFPAK88 (SOT1235) is a 4-lead, single-ended surface-mount package with 8 mm × 8 mm × 1.6 mm body, featuring an exposed copper mounting base electrically connected to the drain terminal for low-inductance, high-current routing and enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - accepts standard 10 V logic-level drive; 0.8 Ω typical gate resistance minimizes ringing. |
| 2 | S | Source return path - internally bonded to two parallel source terminals (pins 2 and 3) for low-inductance current return. |
| 3 | S | Source return path - redundant source connection improves current sharing and reduces package inductance. |
| 4 | mb | Mounting base - electrically tied to drain; serves as primary thermal interface and high-current drain node. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qrr | 46 nC recovered charge - reduces diode switching losses and EMI in synchronous rectifier applications. |
| High avalanche energy rating | 478 mJ unclamped EAS - eliminates need for external avalanche protection in motor control and power supply clamping circuits. |
| Optimized FOM | 106 nC × 3.3 mΩ = 349.8 nC·mΩ - delivers superior efficiency in high-frequency, high-current buck and full-bridge converters. |
| 175 °C rated junction | Full 180 A current capability maintained up to Tj = 175 °C - enables compact thermal design in sealed industrial enclosures. |
| RoHS-compliant LFPAK88 | Halogen-free, lead-free construction with 260 °C peak soldering tolerance - compatible with standard reflow profiles and IPC-A-610 Class 3 assembly. |
Applications
| Synchronous Rectifier in AC-DC | Primary-Side Switch in Isolated DC-DC |
|---|---|
|
Use Scenario: Used as secondary-side switch in LLC resonant and active clamp forward converters delivering >1 kW output. IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diodes to improve efficiency by 2–3% at full load. Use Value: 3.3 mΩ RDS(on) and 46 nC Qr minimize conduction and reverse recovery losses under high dI/dt conditions. |
Use Scenario: Primary-side high-side switch in 48 V–12 V isolated bidirectional DC-DC converters for server power distribution. IC Role / Device Role / Timing Role: High-current, high-voltage switching element operating at 100–300 kHz with hard switching. Use Value: 100 V VDS rating and 848 A pulsed current support enable reliable operation during transient overloads. |
| BLDC Motor Control | Battery Protection Circuit |
|
Use Scenario: Half-bridge leg in 3-phase 48 V BLDC inverters for e-bikes and industrial pumps. IC Role / Device Role / Timing Role: Power stage switch handling 150 A peak phase current with PWM commutation at 20–50 kHz. Use Value: 175 °C qualification and 0.25 K/W Rth(j-mb) allow direct heatsink mounting without thermal interface pads. |
Use Scenario: Main discharge/charge FET in 48 V Li-ion battery packs with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: High-reliability power switch performing rapid fault isolation during 100 A+ short events. Use Value: 478 mJ EAS and 100% avalanche testing ensure survival during unclamped inductive interruption. |
Availability
PSMN3R3-100SSF is available at Aetrix Electronics and suitable for high-current DC-DC conversion, BLDC motor drives, and battery protection systems requiring stable component supply across extended industrial temperature ranges.
Supply support for PSMN3R3-100SSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
This device belongs to the NextPower series - engineered specifically for high-efficiency, high-current switching applications where low RDS(on), robust avalanche capability, and thermal performance are critical.
FAQ
What is the maximum continuous drain current at 100 °C mounting base temperature?
The datasheet specifies 150 A continuous drain current at Tmb = 100 °C (Fig. 2), reflecting thermal derating from the 180 A rating at 25 °C. This value is validated under real-world PCB thermal conditions using a 25.4 mm square copper pad on FR4.
Does PSMN3R3-100SSF require gate resistors for stability in hard-switched applications?
Yes - due to its low gate resistance (0.8 Ω typ.) and high dV/dt immunity, a 5 Ω external gate resistor is recommended (per Fig. 14 test condition) to dampen ringing and control switching speed, especially in full-bridge configurations with high stray inductance.
Can this MOSFET be used in paralleled configurations?
Yes - its positive RDS(on) temperature coefficient (Fig. 13) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use Kelvin source connections to maintain balance under dynamic load conditions.
Is the mounting base electrically isolated from other pins?
No - the mounting base (pin 4) is internally connected to the drain terminal. It must be electrically isolated from the PCB ground plane unless the drain node is at system ground potential; thermal interface material must be electrically insulating if isolation is required.
PSMN3R3-100SSFJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1235
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 7V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 159 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9940 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 341W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK88 (SOT1235)
PSMN3R3-100SSFJ FAQ
1.How can I place an order for PSMN3R3-100SSFJ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN3R3-100SSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN3R3-100SSFJ reliable?
The price and inventory of PSMN3R3-100SSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-100SSFJ is usually 5 days.
3.What payment methods are accepted for PSMN3R3-100SSFJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R3-100SSFJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN3R3-100SSFJ?
PSMN3R3-100SSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN3R3-100SSFJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN3R3-100SSFJ?
For technical support, including PSMN3R3-100SSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-100SSFJ requirements.
6.How does Aetrix verify that PSMN3R3-100SSFJ is sourced from the original manufacturer or authorized distributors?
All PSMN3R3-100SSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-100SSFJ meets industry standards.
7.What is the process for return or replacement of PSMN3R3-100SSFJ?
All PSMN3R3-100SSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-100SSFJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN3R3-100SSFJ part is unused and in its original packaging.
Return procedure for PSMN3R3-100SSFJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN3R3-100SSFJ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

