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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R3-40MLHX

Name: PSMN3R3-40MLHX
Brand: Nexperia USA Inc.
SKU: PSMN3R3-40MLHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R3-40MLHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN3R3-40MLHX.pdf

Description:: MOSFET N-CH 40V 118A LFPAK33

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Product details

Overview

PSMN3R3-40MLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 40 V V_DS, 3.3 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 118 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 TrenchMOS Superjunction technology and is qualified to 175 °C junction temperature for high-efficiency, high-frequency switching in power conversion stages.

For engineers reviewing the PSMN3R3-40MLHX datasheet, PSMN3R3-40MLHX pinout, PSMN3R3-40MLHX application, or PSMN3R3-40MLHX equivalent, this device is selected for synchronous rectification, DC-DC converters, and motor drive circuits where low Q_G, soft body-diode recovery, and wave-solderable exposed leads are critical design requirements.

Technical Context

This MOSFET uses advanced TrenchMOS Superjunction architecture with clip-bonded die attach and solder die bonding-no wire bonds or adhesive-enabling robust 175 °C operation and low parasitic inductance. Its gate threshold voltage (V_GS(th)) is 1.77 V typical, supporting direct drive from 3.3 V or 5 V logic without level shifting.

The device features avalanche-rated ruggedness (200 mJ E_AS), low Q_GD (1.2–8 nC), and fast switching (t_r = 19 ns, t_f = 11 ns) with soft reverse recovery (t_rr = 27 ns, Q_r = 22 nC), minimizing EMI and voltage spiking in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 36 V nominal systems and 48 V bus applications.
R_DS(on) @ V_GS = 10 V	2.7–3.3 mΩ at T_j = 25 °C - enables <1 W conduction loss at 100 A, critical for high-current synchronous rectifiers.
I_D continuous	118 A at T_mb = 25 °C - validated under application testing; limited by PCB thermal design in practice.
Q_G(tot)	11–24 nC @ V_GS = 4.5 V - low gate charge reduces driver power and enables efficient operation above 500 kHz.
t_r/t_f	19 ns rise / 11 ns fall time - supports fast edge control and minimizes overlap loss in half-bridge configurations.
R_th(j-mb)	1.3–1.48 K/W - low junction-to-mounting-base thermal resistance enables direct heatsinking via PCB copper.
V_GS(th)	1.45–2.15 V - logic-level threshold ensures full enhancement with standard microcontroller GPIOs.

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, single-ended surface-mount package with exposed mounting base connected to drain, three source terminals (Pins 1–3), and one gate terminal (Pin 4). The package supports wave soldering, visual solder-joint inspection, and achieves low parasitic inductance due to short internal interconnects and solder die attach.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel source terminals reduce current density and package inductance; enable high-current return path routing.
4	Gate	Single gate input with low RG (0.3–2 Ω) - optimized for clean turn-on/turn-off with minimal external gate resistance.
Mounting Base (mb)	Drain	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current drain node.

Key Features

Feature	Design Value
Avalanche rating	100% tested to 200 mJ non-repetitive E_AS - eliminates need for external snubbers in inductive load switching.
NextPower-S3 technology	Superfast switching with soft body-diode recovery - reduces voltage overshoot and EMI during commutation.
Low Q_rr and Q_GD	Q_rr = 22 nC, Q_GD = 1.2–8 nC - improves efficiency and stability in high-frequency synchronous rectification.
175 °C qualified construction	Clip-bonded die + solder attach, no wire bonds or glue - ensures long-term reliability in automotive under-hood and industrial power modules.
Wave-solderable leads	Exposed source and gate leads allow automated wave soldering and real-time solder joint inspection - reduces assembly cost and defect rate.

Applications

Secondary Side Synchronous Rectification

High-Frequency DC-DC Converters

Use Scenario: Used on secondary side of isolated flyback or LLC resonant converters delivering 12–24 V output at >10 A.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 3.3 mΩ R_DS(on) cuts forward voltage drop to ~330 mV at 100 A, reducing rectifier loss by >60% vs. 40 V Schottky.

Use Scenario: Input/output switches in 300–1000 kHz buck, boost, or multiphase VRMs for server PSUs and telecom rectifiers.

IC Role / Device Role: High-current, high-dV/dt power switch requiring fast turn-on and minimal ringing.

Use Value: Low Q_GD and soft body-diode recovery suppress voltage spikes and EMI, enabling smaller EMI filters and higher layout density.

Brushless DC Motor Drive

High-Efficiency LED Lighting Drivers

Use Scenario: Half-bridge low-side switch in 24–48 V BLDC inverters driving fans, pumps, or drones.

IC Role / Device Role: PWM-controlled power stage switch handling peak currents up to 475 A (pulsed).

Use Value: Avalanche ruggedness and 175 °C rating ensure survivability during motor stall, phase reversal, and regenerative braking events.

Use Scenario: Primary-side switch in high-power constant-current LED drivers (e.g., streetlights, horticulture lighting).

IC Role / Device Role: High-duty-cycle, high-temperature switching element in buck or SEPIC topologies.

Use Value: 1.3 K/W R_th(j-mb) allows direct thermal coupling to aluminum PCB, sustaining >90% efficiency at ambient >85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	40 V, 3.6 mΩ @ 10 V, TO-252 package, R_th(j-a) = 50 K/W - higher thermal resistance than LFPAK33's 1.4 K/W to mounting base.	Requires external heatsink for >50 A operation; less suitable for compact, board-level thermal management.	Choose when TO-252 footprint compatibility is required and board-level heatsinking is not feasible.
Vishay SIHL330N04LS	40 V, 3.3 mΩ @ 10 V, PowerPAK SO-8L, Q_G = 22 nC - similar R_DS(on) but higher Q_GD (5.2 nC) and no avalanche rating.	Lacks 100% avalanche test; softer switching performance may increase EMI in high-dV/dt environments.	Choose for cost-sensitive designs where avalanche stress is absent and EMI filtering budget allows.

Compared with PSMN3R3-40MLHX, IPP036N04L trades superior board-level thermal performance for legacy package compatibility, while SIHL330N04LS matches R_DS(on) but sacrifices avalanche ruggedness and soft recovery-critical for unclamped inductive switching.

Availability

PSMN3R3-40MLHX is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-frequency DC-DC converters, and brushless DC motor drives requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for PSMN3R3-40MLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's NextPower-S3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial, computing, and lighting applications demanding ruggedness and thermal performance.

FAQ

What is the maximum continuous drain current for PSMN3R3-40MLHX?

The datasheet specifies 118 A continuous drain current at T_mb = 25 °C, verified in application testing. In real-world designs, actual current is constrained by PCB copper area, thermal interface, ambient temperature, and airflow-not by the MOSFET alone. At T_mb = 100 °C, rated current drops to 84 A per Figure 2.

Can PSMN3R3-40MLHX be driven directly from a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) = 1.45–2.15 V and guaranteed R_DS(on) ≤ 4.2 mΩ at V_GS = 4.5 V, the device fully enhances using 3.3 V logic. However, for lowest R_DS(on) and fastest switching, a 5 V gate driver is recommended-especially at high current or elevated temperature.

Is the mounting base (drain) electrically isolated from the PCB copper pour?

No. The mounting base is the drain terminal and must be connected to the high-side or low-side drain net. When used in low-side configuration, it connects directly to ground plane; in high-side use, it connects to input rail. Thermal vias beneath the mounting base must maintain electrical connectivity to that net.

Does PSMN3R3-40MLHX require a gate resistor for stability?

A small external gate resistor (1–5 Ω) is recommended to dampen gate oscillation caused by PCB trace inductance interacting with low intrinsic gate resistance (0.3–2 Ω). This prevents unintended turn-on during fast dV/dt events and improves EMI behavior-especially in half-bridge layouts with shared source paths.

PSMN3R3-40MLHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 118A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3794 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 101W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN3R3-40MLHX FAQ

1.How can I place an order for PSMN3R3-40MLHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R3-40MLHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R3-40MLHX reliable?

The price and inventory of PSMN3R3-40MLHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-40MLHX is usually 5 days.

3.What payment methods are accepted for PSMN3R3-40MLHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R3-40MLHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R3-40MLHX?

PSMN3R3-40MLHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R3-40MLHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R3-40MLHX?

For technical support, including PSMN3R3-40MLHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-40MLHX requirements.

6.How does Aetrix verify that PSMN3R3-40MLHX is sourced from the original manufacturer or authorized distributors?

All PSMN3R3-40MLHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-40MLHX meets industry standards.

7.What is the process for return or replacement of PSMN3R3-40MLHX?

All PSMN3R3-40MLHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-40MLHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R3-40MLHX part is unused and in its original packaging.

Return procedure for PSMN3R3-40MLHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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