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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R3-40MSHX

Name: PSMN3R3-40MSHX
Brand: Nexperia USA Inc.
SKU: PSMN3R3-40MSHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R3-40MSHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN3R3-40MSHX.pdf

Description:: MOSFET N-CH 40V 118A LFPAK33

Quantity:: RFQ Add To RFQ list

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Inventory:2,990

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Product details

Overview

PSMN3R3-40MSHX from Nexperia is a standard-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated 40 V V_DS, 3.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, with 118 A continuous drain current capability at T_mb = 25 °C. It employs NextPower-S3 TrenchMOS Superjunction technology for high-efficiency synchronous rectification in DC-DC converters operating at high switching frequencies.

For engineers reviewing the PSMN3R3-40MSHX datasheet, PSMN3R3-40MSHX pinout, PSMN3R3-40MSHX application, or PSMN3R3-40MSHX equivalent, key selection criteria include its 1.3 K/W junction-to-mounting-base thermal resistance, 4.8 nC typical Q_GD, soft-recovery body diode, avalanche ruggedness (200 mJ), and LFPAK33's exposed mounting base for low-inductance, high-current PCB routing.

Technical Context

This MOSFET uses advanced TrenchMOS Superjunction architecture optimized for high-frequency power conversion. Its gate charge profile features low Q_G(tot) (30 nC typ), low Q_GD (4.8 nC typ), and a well-defined 4.4 V gate plateau voltage - enabling fast, controlled switching with minimal Miller-induced oscillation.

The device integrates a robust intrinsic body diode with 27 ns reverse recovery time and 21 nC recovered charge, supporting zero-voltage switching (ZVS) topologies. Its 175 °C qualified clip-bonded die attach and solder die attach eliminate wire bonds and glue, ensuring long-term reliability under thermal cycling in high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/48 V input DC-DC stages and motor drive half-bridges
R_DS(on)	3.3 mΩ max at V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current synchronous rectifiers
I_D (cont)	118 A at T_mb = 25 °C - Validated continuous current with proper PCB copper area and thermal management
Q_GD	4.8 nC typ - Low gate-drain charge minimizes switching losses and improves EMI behavior during hard-switching transitions
R_th(j-mb)	1.3 K/W typ - Enables direct thermal coupling to heatsink or copper plane, reducing junction temperature rise by >50% vs SO-8
t_r/t_f	6.4 ns / 7.4 ns - Fast edge rates support >1 MHz operation while maintaining controllable dV/dt via external gate resistor
E_AS	200 mJ - Avalanche energy rating ensures robustness against inductive turn-off transients without snubbers

Pinout & Package

PSMN3R3-40MSHX is housed in the LFPAK33 (SOT1210) package - a leaded surface-mount outline with an exposed copper mounting base (drain-connected), three parallel source leads, and one gate lead. The package enables wave soldering, visual solder-joint inspection, and low-parasitic interconnects due to clip bonding and absence of wire bonds or adhesive.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input with 0.8 Ω typical gate resistance - supports direct drive from common gate drivers without added series resistance
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return path

Key Features

Feature	Design Value
NextPower-S3 Superjunction Technology	Delivers superfast switching with soft body-diode recovery - reduces EMI and eliminates need for external Schottky catch diodes in synchronous rectifiers
Avalanche Rating	100% tested to 200 mJ non-repetitive energy - ensures reliable operation during overvoltage transients in unregulated bus conditions
Clip-Bonded Die Attach	No wire bonds or epoxy - achieves 175 °C qualification and superior thermal cycling endurance in automotive and industrial power modules
Low Q_rr & Soft Recovery	21 nC recovered charge and 27 ns t_rr - minimizes reverse recovery losses and voltage spikes in LLC and phase-shifted full-bridge topologies
Wave-Solderable Exposed Leads	Enables automated assembly and real-time solder-joint quality verification - critical for high-volume server PSU and telecom power manufacturing

Applications

Secondary Side Synchronous Rectification

High-Frequency DC-DC Converters

Use Scenario: Used on secondary side of isolated flyback or forward converters in server PSUs and telecom power supplies.

IC Role / Device Role: High-side synchronous rectifier replacing Schottky diodes to reduce conduction losses at 12–48 V output rails.

Use Value: 3.3 mΩ R_DS(on) cuts conduction loss by >60% vs 40 V Schottky, improving efficiency by 0.8–1.2% at full load.

Use Scenario: Output switch in 500 kHz–1 MHz buck converters for FPGA core voltage regulation.

IC Role / Device Role: Low-side power switch with fast switching and low Q_GD to minimize dead-time losses and cross-conduction risk.

Use Value: 4.8 nC Q_GD and 6.4 ns t_r enable clean, low-spiking switching at 1 MHz, reducing filter size and EMI filtering cost.

Brushless DC Motor Drive

High-Efficiency LED Drivers

Use Scenario: Half-bridge low-side switch in 24–48 V BLDC inverters for HVAC fans and industrial pumps.

IC Role / Device Role: PWM-controlled power stage switch handling peak currents up to 475 A (pulsed).

Use Value: 175 °C junction rating and 1.3 K/W R_th(j-mb) allow sustained 84 A operation at T_mb = 100 °C - eliminating derating in compact motor controllers.

Use Scenario: Primary-side switch in constant-current LED drivers for street lighting and horticultural fixtures.

IC Role / Device Role: High-efficiency buck or buck-boost switch managing 3–10 A LED strings at 40 V bus.

Use Value: Avalanche ruggedness (200 mJ) withstands inductive kickback from long LED string wiring, eliminating snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R2-40YSH	Same LFPAK33 package, 3.2 mΩ R_DS(on), but logic-level (2.5 V threshold); higher Q_G (39 nC)	Better suited for low-V_GS drive (e.g., 3.3 V microcontrollers), less optimal for high-frequency >500 kHz use due to higher gate charge	Select when gate drive voltage is limited to ≤5 V and switching frequency is moderate (<300 kHz)
IPB110N04S4-02	TO-263 package, 2.0 mΩ R_DS(on), higher Q_GD (12 nC), no avalanche rating	Higher current capacity but larger footprint and no avalanche ruggedness - requires external protection in inductive loads	Select only when board space allows TO-263 and system-level transient protection is already implemented

Compared with PSMN3R3-40MSHX, PSMN3R2-40YSH trades higher gate charge for logic-level compatibility, while IPB110N04S4-02 offers lower R_DS(on) at the cost of package size, thermal interface complexity, and missing avalanche hardening - making PSMN3R3-40MSHX the balanced choice for high-reliability, high-frequency, space-constrained 40 V power stages.

Availability

PSMN3R3-40MSHX is available at Aetrix Electronics and suitable for server power supplies, telecom DC-DC modules, and industrial BLDC motor drives requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for PSMN3R3-40MSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in power MOSFETs, ESD protection, and logic ICs for automotive, industrial, and computing markets.

This device belongs to Nexperia's NextPower-S3 portfolio - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power systems where low Q_GD, soft diode recovery, and 175 °C operation are mandatory.

FAQ

What is the maximum continuous drain current for PSMN3R3-40MSHX under real-world PCB conditions?

The datasheet specifies 118 A at T_mb = 25 °C with sufficient copper area, but practical current is limited by PCB thermal design. With 25.4 mm × 25.4 mm, 70 µm copper on FR4, continuous current drops to ~84 A at T_mb = 100 °C. Derating curves in Figure 2 must be used with actual measured mounting base temperature.

Does PSMN3R3-40MSHX require a gate resistor for stability in high-speed switching?

Yes - although its 0.8 Ω typical gate resistance supports fast switching, a 2–5 Ω external gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Q_GD. This is especially critical above 500 kHz to maintain clean V_GS edges and prevent false turn-on.

Can PSMN3R3-40MSHX replace a standard SO-8 MOSFET in an existing layout?

No - LFPAK33 (SOT1210) has different pad geometry, pin count (4 terminals + mounting base), and thermal land requirements than SO-8. Direct replacement requires PCB redesign to accommodate the larger footprint, exposed drain pad, and three-source-terminal layout per Figure 18.

Is the body diode suitable for freewheeling in hard-switched topologies?

Yes - the body diode is avalanche-rated and exhibits soft reverse recovery (27 ns t_rr, 21 nC Q_r). It performs reliably in hard-switched buck or half-bridge freewheeling, though ZVS topologies benefit more from its low Q_rr and soft recovery characteristics.

PSMN3R3-40MSHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 118A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3063 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 101W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN3R3-40MSHX FAQ

1.How can I place an order for PSMN3R3-40MSHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R3-40MSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R3-40MSHX reliable?

The price and inventory of PSMN3R3-40MSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-40MSHX is usually 5 days.

3.What payment methods are accepted for PSMN3R3-40MSHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R3-40MSHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R3-40MSHX?

PSMN3R3-40MSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R3-40MSHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R3-40MSHX?

For technical support, including PSMN3R3-40MSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-40MSHX requirements.

6.How does Aetrix verify that PSMN3R3-40MSHX is sourced from the original manufacturer or authorized distributors?

All PSMN3R3-40MSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-40MSHX meets industry standards.

7.What is the process for return or replacement of PSMN3R3-40MSHX?

All PSMN3R3-40MSHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-40MSHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R3-40MSHX part is unused and in its original packaging.

Return procedure for PSMN3R3-40MSHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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