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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R3-40YS/2X

Name: PSMN3R3-40YS/2X
Brand: Nexperia USA Inc.
SKU: PSMN3R3-40YS/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R3-40YS/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R3-40YS/2X.pdf

Description:: PSMN3R3-40YS/SOT669/LFPAK

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Product details

Overview

PSMN3R3-40YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 40 V V_DS, 3.3 mΩ R_DS(on) at T_j = 25 °C and 100 A continuous drain current at T_mb = 25 °C. It features advanced TrenchMOS technology, operates up to 175 °C junction temperature, and is optimized for high-efficiency switching in power conversion and load control circuits.

For engineers reviewing the PSMN3R3-40YS datasheet, PSMN3R3-40YS pinout, PSMN3R3-40YS application, or PSMN3R3-40YS equivalent, this device is selected for high-current, thermally demanding roles where low conduction loss, robust avalanche energy (162 mJ), and LFPAK's superior thermal resistance (R_th(j-mb) = 0.54 K/W typ.) are critical design requirements.

Technical Context

This MOSFET employs Nexperia's TrenchMOS process to achieve low R_DS(on) and gate charge (Q_G(tot) = 49 nC), enabling fast switching with reduced drive losses. Its LFPAK package integrates a large mounting base directly connected to the drain, delivering enhanced thermal performance over conventional SO8 packages.

The device supports unclamped inductive switching with 162 mJ non-repetitive avalanche energy at T_j(init) = 25 °C and exhibits stable threshold voltage (V_GS(th) = 2–4 V at 25 °C) and low leakage (I_DSS ≤ 1 µA at 125 °C), ensuring reliable operation across industrial temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V/24 V/36 V bus systems.
R_DS(on)	3.3 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-efficiency DC-DC stages.
I_D (cont.)	100 A @ T_mb = 25 °C - High current capability supports single-device solutions in server VRMs and motor phase legs.
Q_G(tot)	49 nC - Total gate charge determines driver strength requirement; enables efficient 100–500 kHz switching with moderate gate drivers.
E_AS	162 mJ - Non-repetitive avalanche energy rating allows robustness against inductive turn-off transients without external snubbers.
R_th(j-mb)	0.54 K/W typ. - Low junction-to-mounting-base thermal resistance enables direct heatsinking and >100 W power dissipation with minimal ΔT.
V_GS(th)	2–4 V @ T_j = 25 °C - Threshold voltage ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers.

Pinout & Package

PSMN3R3-40YS uses the SOT669 (LFPAK) 4-lead plastic surface-mount package. The mounting base (mb) is electrically connected to the drain terminal and serves as the primary thermal path. Package dimensions: 5.0 × 3.3 × 1.3 mm (L × E × H), with exposed drain pad for PCB copper area attachment.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input; requires <50 Ω series resistance to damp ringing during fast switching transitions.
Mounting Base (mb)	Drain (D)	Exposed drain pad forms low-inductance, high-current drain connection and primary thermal interface to PCB heatsink.

Key Features

Feature	Design Value
Advanced TrenchMOS structure	Delivers 3.3 mΩ R_DS(on) at 10 V drive while maintaining rugged short-circuit capability.
LFPAK thermal architecture	0.54 K/W typical junction-to-mounting-base resistance enables >100 W dissipation with 2 oz copper and 10 cm² thermal pad.
175 °C rated junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating below 100 A.
High avalanche energy (162 mJ)	Withstands unclamped inductive switching events common in motor drives and synchronous rectifiers without failure.
Low Q_GD/Q_G ratio	11.2 nC / 49 nC = 0.23 - Improves Miller immunity and reduces risk of spurious turn-on during high dv/dt conditions.

Applications

DC-DC Converters

Lithium-ion Battery Protection

Use Scenario: Primary-side switch in 48 V–12 V buck converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch handling 50–100 A continuous current with 200–500 kHz PWM.

Use Value: 3.3 mΩ R_DS(on) minimizes conduction loss (<0.83 W at 50 A), improving full-load efficiency by ≥0.5% versus 5 mΩ alternatives.

Use Scenario: Charge/discharge path switch in multi-cell Li-ion battery packs for power tools and e-bikes.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair controlling bidirectional current flow under protection IC supervision.

Use Value: 175 °C rating ensures reliability during overcurrent fault conditions where internal heating exceeds 150 °C.

Load Switching

Motor Control

Use Scenario: Hot-swap and inrush current limiting in industrial PLC I/O modules and 24 V fieldbus nodes.

IC Role / Device Role / Timing Role: Low-side load switch enabling controlled power-up of downstream capacitive loads up to 10,000 µF.

Use Value: 546 A pulsed peak current (I_DM) supports safe turn-on into highly capacitive loads without bond-wire fusing.

Use Scenario: Half-bridge low-side switch in 24 V BLDC motor drivers for HVAC fans and pumps.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch in 3-phase inverter leg with 20 ns rise/fall times.

Use Value: 11.2 nC Q_GD and 49 nC Q_G(tot) enable clean commutation at 20 kHz PWM with minimal shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	40 V, 3.1 mΩ @ 10 V, TO-220 package, R_th(j-c) = 1.2 K/W	Requires mechanical heatsink; unsuitable for ultra-thin or double-sided PCB layouts.	Select when board space permits discrete heatsinking and lower gate charge (38 nC) is prioritized over thermal density.
STL220N4F7AG	40 V, 2.2 mΩ @ 10 V, PowerFLAT 5×6 package, R_th(j-mb) = 0.75 K/W	Higher current density but lower avalanche rating (120 mJ) and no mounting base drain connection.	Select when ultimate R_DS(on) is required and system-level clamping protects against unclamped inductive spikes.

Compared with IRL3803PbF and STL220N4F7AG, PSMN3R3-40YS uniquely combines 3.3 mΩ on-resistance, 162 mJ avalanche ruggedness, and LFPAK's 0.54 K/W thermal resistance-making it optimal for compact, high-power-density industrial converters where thermal management and transient robustness are co-constrained.

Availability

PSMN3R3-40YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and motor control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN3R3-40YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and communications power systems where efficiency, ruggedness, and package-level thermal performance are jointly critical.

FAQ

What is the maximum continuous drain current for PSMN3R3-40YS at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 97 A per the limiting values table. This reflects thermal constraints of the LFPAK package under real-world PCB heatsinking conditions, not a device limitation-actual current depends on copper area, airflow, and ambient temperature.

Does PSMN3R3-40YS have a built-in body diode, and what are its key parameters?

Yes, it includes an integrated source-drain diode with V_SD = 0.82–1.2 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 44 ns, and recovered charge Q_r = 48 nC. These values support synchronous rectification and freewheeling in hard-switched topologies.

Can PSMN3R3-40YS be used in automotive applications?

No-this part is not AEC-Q101 qualified and lacks automotive-specific stress testing or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in the legal disclaimers; use only in industrial, communications, or consumer equipment.

What is the recommended gate resistor value for 200 kHz switching in a half-bridge configuration?

A 10 Ω gate resistor is recommended to balance switching speed (21 ns rise time) and gate oscillation damping. At 200 kHz, this yields ~1.5 W gate drive loss with 12 V drive, compatible with common dual MOSFET drivers like the UCC27531.

PSMN3R3-40YS/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2754 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 117W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R3-40YS/2X FAQ

1.How can I place an order for PSMN3R3-40YS/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R3-40YS/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R3-40YS/2X reliable?

The price and inventory of PSMN3R3-40YS/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-40YS/2X is usually 5 days.

3.What payment methods are accepted for PSMN3R3-40YS/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R3-40YS/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R3-40YS/2X?

PSMN3R3-40YS/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R3-40YS/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R3-40YS/2X?

For technical support, including PSMN3R3-40YS/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-40YS/2X requirements.

6.How does Aetrix verify that PSMN3R3-40YS/2X is sourced from the original manufacturer or authorized distributors?

All PSMN3R3-40YS/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-40YS/2X meets industry standards.

7.What is the process for return or replacement of PSMN3R3-40YS/2X?

All PSMN3R3-40YS/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-40YS/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R3-40YS/2X part is unused and in its original packaging.

Return procedure for PSMN3R3-40YS/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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