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Nexperia USA Inc. PSMN3R3-80PS,127

Name: PSMN3R3-80PS,127
Brand: Nexperia USA Inc.
SKU: PSMN3R3-80PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R3-80PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN3R3-80PS,127.pdf

Description:: MOSFET N-CH 80V 120A TO220AB

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Product details

Overview

PSMN3R3-80PS from Nexperia is an N-channel standard-level MOSFET in TO-220AB package, rated for 80 V drain-source voltage, 3.3 mΩ R_DS(on) at 25 °C, and 120 A continuous drain current at T_mb = 25 °C. It operates up to 175 °C junction temperature and is optimized for high-efficiency power switching in server PSUs and motor control circuits.

For engineers reviewing the PSMN3R3-80PS datasheet, PSMN3R3-80PS pinout, PSMN3R3-80PS application, or PSMN3R3-80PS equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust avalanche energy rating (676 mJ), thermal resistance to mounting base (0.22–0.44 K/W), and compatibility with standard-level gate drivers in high-current DC-DC and load-switching designs.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low conduction losses while maintaining ruggedness under unclamped inductive switching. Its gate threshold voltage (2–4 V at 25 °C) ensures reliable turn-on with standard 10 V logic-level drivers without requiring level-shifting circuitry.

The device features a fast intrinsic body diode (t_rr = 63 ns, Q_r = 121 nC) and low output capacitance (C_oss = 847 pF), enabling efficient hard-switching operation in synchronous rectification and half-bridge topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V input systems and 60 V bus rails.
R_DS(on)	3.3 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current load switches.
I_D (cont)	120 A @ T_mb = 25 °C - Supports high-power server PSU outputs and industrial motor phase legs when heatsinked.
E_AS	676 mJ - Withstands single-pulse inductive energy in motor drive freewheeling and relay snubbing without failure.
R_th(j-mb)	0.22–0.44 K/W - Direct thermal path to heatsink enables >200 W dissipation with modest thermal interface resistance.
Q_G(tot)	139 nC - Compatible with standard gate drivers (e.g., UCC27531) delivering ≥2 A peak without excessive drive loss.
t_f/t_r	44 ns / 43 ns - Supports switching frequencies up to 500 kHz in resonant or hard-switched converters.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted backplate and one mounting hole; 3-lead configuration. Mounting base (mb) serves as thermal and electrical connection to drain.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal accepting 10 V standard-level drive; internal gate resistance 0.9 Ω limits ringing and simplifies layout.
2	Drain (D)	High-side switch node connected to package backplate (mb); requires isolation from heatsink unless referenced to same potential.
3	Source (S)	Power return path and reference for gate drive; low-inductance source bond wires minimize switching overshoot.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V - eliminates need for gate driver boost stages in 12/24 V systems.
High-temperature qualification	Rated for 175 °C junction operation - supports compact, sealed enclosures in industrial motor drives and telecom rectifiers.
Low gate charge	Q_G(tot) = 139 nC - reduces driver power loss and enables higher-frequency operation without sacrificing efficiency.
Rugged body diode	t_rr = 63 ns, Q_r = 121 nC - minimizes reverse recovery loss in synchronous buck and LLC secondary-side rectification.
Avalanche-rated	E_AS = 676 mJ - withstands unclamped inductive transients in motor phase-leg and solenoid drive applications.

Applications

Server Power Supplies

DC-to-DC Converters

Use Scenario: Primary-side switching in 48 V input, 12 V output server VRMs handling >200 A per rail.

IC Role / Device Role / Timing Role: High-current synchronous rectifier switch operating at 300–500 kHz with tight duty-cycle control.

Use Value: 3.3 mΩ R_DS(on) at 25 °C reduces conduction loss by >35% vs. comparable 5 mΩ devices, directly improving full-load efficiency.

Use Scenario: Step-down conversion in industrial PLC power modules converting 24 V to 5 V/3.3 V for logic rails.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology with 100–250 kHz PWM frequency.

Use Value: 139 nC total gate charge allows clean switching with low-cost 1 A gate drivers, reducing BOM cost and board space.

Motor Control

Load Switch

Use Scenario: Half-bridge phase leg in 24–48 V BLDC motor drives for HVAC blowers and robotic actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor winding current with 10–20 kHz PWM.

Use Value: 676 mJ avalanche energy rating prevents failure during commutation-induced inductive kickback without external snubbers.

Use Scenario: Hot-swap and inrush-limited power distribution in network switches and storage enclosures.

IC Role / Device Role / Timing Role: Main pass element enabling soft-start and overcurrent protection via external sense resistor.

Use Value: 120 A continuous rating at 25 °C mounting base supports 60 A system loads with 2× derating margin and thermal headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1405PBF	R_DS(on) = 5.3 mΩ @ 10 V; Q_G = 131 nC; TO-220 package; 55 V rating	Limited to ≤55 V systems; higher conduction loss increases thermal stress in 48 V server rails.	Choose only if voltage requirement is ≤55 V and cost sensitivity outweighs efficiency loss.
STP120N80M5	R_DS(on) = 5.8 mΩ @ 10 V; Q_G = 120 nC; TO-247 package; 80 V rating	Higher R_DS(on) and larger TO-247 footprint increase board area and conduction loss vs. PSMN3R3-80PS.	Prefer when higher avalanche rating (E_AS = 1.2 J) justifies trade-off in size and efficiency for harsh motor environments.

Compared with IRF1405PBF and STP120N80M5, PSMN3R3-80PS delivers the lowest R_DS(on) in TO-220 form factor for 80 V systems, enabling higher power density and lower thermal design complexity in space-constrained server and industrial power supplies.

Availability

PSMN3R3-80PS is available at Aetrix Electronics and suitable for server power supplies, motor control inverters, and high-current DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN3R3-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's standard-level TrenchMOS family, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor drive applications where thermal robustness and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PSMN3R3-80PS at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 75 A, based on Figure 1 of the datasheet. This reflects thermal limitation of the TO-220AB package rather than semiconductor capability, and assumes proper heatsinking with low thermal interface resistance.

Does PSMN3R3-80PS have avalanche capability, and how is it specified?

Yes - it is fully rated for non-repetitive drain-source avalanche with E_AS = 676 mJ under defined conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 120 A, V_sup ≤ 80 V, and R_GS = 50 Ω. This rating is validated per JEDEC standards and applies to unclamped inductive switching events.

Can PSMN3R3-80PS be driven directly from a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is 2–4 V, but full enhancement requires V_GS ≥ 10 V for low R_DS(on). Driving from 3.3 V will result in partial turn-on and excessive conduction loss (>10× nominal). A dedicated gate driver or level shifter is required.

What is the thermal resistance from junction to ambient for PSMN3R3-80PS in free air?

R_th(j-a) is 60 K/W in vertical free-air orientation, per Table 5. However, this value is not practical for operational use - the device must be mounted to a heatsink. The relevant spec is R_th(j-mb) = 0.22–0.44 K/W, which governs real-world thermal performance when properly heatsinked.

PSMN3R3-80PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9961 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 338W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN3R3-80PS,127 FAQ

1.How can I place an order for PSMN3R3-80PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R3-80PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R3-80PS,127 reliable?

The price and inventory of PSMN3R3-80PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-80PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN3R3-80PS,127?

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PSMN3R3-80PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R3-80PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R3-80PS,127?

For technical support, including PSMN3R3-80PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-80PS,127 requirements.

6.How does Aetrix verify that PSMN3R3-80PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN3R3-80PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-80PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN3R3-80PS,127?

All PSMN3R3-80PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-80PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R3-80PS,127 part is unused and in its original packaging.

Return procedure for PSMN3R3-80PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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