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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R3-80YSFX

Name: PSMN3R3-80YSFX
Brand: Nexperia USA Inc.
SKU: PSMN3R3-80YSFX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R3-80YSFX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R3-80YSFX.pdf

Description:: PSMN3R3-80YSF/SOT669/LFPAK

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Product details

Overview

PSMN3R3-80YSFX from Nexperia is a NextPower 80 V, 3.1 mΩ (T_j = 25 °C), 160 A N-channel MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C junction temperature and optimized for high-efficiency switching in DC-DC converters and motor drives. It delivers low Q_G × R_DS(on) FOM (70 nC × 3.1 mΩ), strong avalanche ruggedness (289 mJ), and halogen-free RoHS-compliant construction.

For engineers reviewing the PSMN3R3-80YSFX datasheet, PSMN3R3-80YSFX pinout, PSMN3R3-80YSFX application, or PSMN3R3-80YSFX equivalent, key selection criteria include its 160 A continuous current rating at T_mb = 25 °C, 0.43 K/W junction-to-mounting-base thermal resistance, and low 36 nC reverse recovery charge for synchronous rectification in USB PD adapters and resonant topologies.

Technical Context

This MOSFET employs a trench-gate silicon process with optimized cell layout to achieve ultra-low R_DS(on) while maintaining robust avalanche capability and fast switching dynamics. Its gate threshold voltage (2–4 V typ.) enables standard 10 V gate drive compatibility without requiring level-shifting circuitry.

The device integrates a co-packaged body diode with 36 nC recovered charge and 38 ns reverse recovery time, enabling efficient synchronous rectification in AC-DC and LLC resonant converters. The mounting base (Pin mb) is electrically connected to drain, supporting low-inductance PCB layouts and direct thermal coupling to heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V maximum - supports primary-side switching in 48 V industrial DC-DC and 60 V USB PD systems with margin.
R_DS(on)	3.1 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 100 A, critical for high-current BLDC inverters.
I_D (cont)	160 A @ T_mb = 25 °C - demonstrated continuous current rating validated under application test conditions.
Q_G(tot)	70 nC typ. - balances switching speed and gate driver power loss in 100–500 kHz hard-switched converters.
E_AS	289 mJ non-repetitive avalanche energy - ensures robustness against inductive turn-off transients in half-bridge motor control.
R_th(j-mb)	0.43 K/W typ. - enables >200 W power dissipation with minimal ΔT between junction and copper mounting pad.
Q_r	36 nC - reduces diode conduction loss and EMI in synchronous rectifier operation across flyback and resonant topologies.

Pinout & Package

LFPAK56 (SOT669) is a single-ended surface-mount plastic package with exposed copper mounting base for enhanced thermal and electrical performance. It features four terminals: three source pins (Pins 1–3), one gate pin (Pin 4), and a drain-connected mounting base (mb).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source connections reduce package inductance and improve current sharing in high-di/dt applications like BLDC phase legs.
4	Gate (G)	Single gate input with 0.7 Ω typical gate resistance - compatible with standard 1–5 Ω external gate resistors for controlled dV/dt.
mb	Mounting Base / Drain (D)	Drain-connected copper pad provides low-impedance thermal path to PCB and eliminates need for separate drain trace routing.

Key Features

Feature	Design Value
Low Q_rr	36 nC - minimizes switching loss and voltage overshoot during diode commutation in synchronous rectifiers.
High current rating	160 A continuous - validated via application testing, not just theoretical derating, enabling compact inverter designs.
Avalanche ruggedness	289 mJ E_AS - allows safe operation under unclamped inductive switching without external snubbers in half-bridge motor drives.
Thermal resistance	0.43 K/W R_th(j-mb) - delivers >2× better thermal performance than DPAK packages, reducing heatsink size by ~40%.
Halogen-free & RoHS	Compliant with EU Directive 2011/65/EU - meets environmental requirements for industrial and consumer end equipment.

Applications

USB Power Delivery Adapter

BLDC Motor Inverter

Use Scenario: Primary-side switch in 100 W GaN-assisted USB PD 3.1 adapter operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-side switching element in active-clamp forward or asymmetrical half-bridge topology.

Use Value: 3.1 mΩ R_DS(on) and 70 nC Q_G(tot) enable >95% efficiency at full load while maintaining low gate drive loss.

Use Scenario: Phase-leg low-side switch in 3-phase 750 W BLDC motor controller for e-bikes and power tools.

IC Role / Device Role / Timing Role: Low-side power switch handling 160 A peak phase current with 10 µs dead-time constraints.

Use Value: Triple-source-pin configuration reduces source inductance, minimizing shoot-through risk and improving PWM fidelity.

Synchronous Rectifier

Flyback Converter

Use Scenario: Secondary-side synchronous rectifier in 65 W laptop adapter using QR flyback architecture.

IC Role / Device Role / Timing Role: Fast-recovery body diode replacement with gate-driven conduction during output diode conduction interval.

Use Value: 36 nC Q_r and 38 ns t_rr cut reverse recovery loss by >60% vs. Schottky alternatives, boosting light-load efficiency.

Use Scenario: Primary switch in universal-input (90–264 VAC) 30 W flyback SMPS for smart home sensors.

IC Role / Device Role / Timing Role: Main power switch operating in discontinuous conduction mode (DCM) with 65 kHz switching frequency.

Use Value: 80 V V_DS rating provides 20% margin over reflected output voltage + leakage spike, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N08N	80 V, 3.6 mΩ @ 25 °C, 150 A, TO-220 package - higher R_DS(on), larger footprint, no integrated mounting base.	Requires external heatsink and thermal interface material; less suitable for space-constrained SMT-only designs.	Choose when legacy through-hole assembly or higher single-pulse surge current (>1 kA) is required.
Vishay SiR626DP	80 V, 2.8 mΩ @ 25 °C, 160 A, PowerPAK SO-8 - lower R_DS(on) but only 0.62 K/W R_th(j-mb), no triple-source configuration.	Limited thermal performance in sustained high-power operation; higher diode Q_r (48 nC) increases synchronous rectifier losses.	Choose when lowest possible conduction loss dominates over thermal management and diode recovery performance.

Compared with IPP036N08N and SiR626DP, PSMN3R3-80YSFX uniquely combines triple-source low-inductance layout, 0.43 K/W thermal resistance, and 36 nC Q_r - making it optimal for compact, high-efficiency SMT-based motor drives and USB PD adapters where board area and thermal headroom are constrained.

Availability

PSMN3R3-80YSFX is available at Aetrix Electronics and suitable for USB Power Delivery adapters, BLDC motor controllers, synchronous rectifiers, and flyback converters requiring stable component supply and consistent parametric performance across production lots.

Supply support for PSMN3R3-80YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to the NextPower series - engineered specifically for high-efficiency, high-current switching applications such as motor control, server power supplies, and USB-C PD infrastructure, emphasizing ruggedness, thermal performance, and system-level efficiency.

FAQ

What is the maximum continuous drain current rating for PSMN3R3-80YSFX?

The datasheet specifies 160 A continuous drain current at T_mb = 25 °C, validated through application testing-not just calculated from R_DS(on) and thermal resistance. Practical current is limited by PCB copper area, thermal interface quality, and ambient temperature; at T_mb = 100 °C, rated current drops to 133 A.

Is PSMN3R3-80YSFX suitable for avalanche operation?

Yes - it is fully avalanche-rated and 100% tested for non-repetitive avalanche energy, with E_AS = 289 mJ at I_D = 49 A, V_sup ≤ 80 V, and T_j(init) = 25 °C. This enables robust operation in inductive switching circuits like half-bridge motor drivers without external protection components.

How does the LFPAK56 package improve thermal performance compared to standard SO-8?

The LFPAK56's exposed copper mounting base (connected to drain) provides a direct thermal path from die to PCB, achieving R_th(j-mb) = 0.43 K/W - nearly 40% lower than typical SO-8 packages. This allows >200 W power dissipation with minimal junction-to-board temperature rise, eliminating need for bulky heatsinks in many applications.

Can PSMN3R3-80YSFX be used as a synchronous rectifier in a 48 V output DC-DC converter?

Yes - its 36 nC Q_r, 38 ns t_rr, and low 3.1 mΩ R_DS(on) make it highly effective as a secondary-side synchronous rectifier. When driven with precise timing relative to the primary switch, it reduces conduction and recovery losses significantly versus Schottky diodes, especially at high output currents (>20 A) and frequencies >200 kHz.

PSMN3R3-80YSFX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 108 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6986 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R3-80YSFX FAQ

1.How can I place an order for PSMN3R3-80YSFX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R3-80YSFX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R3-80YSFX reliable?

The price and inventory of PSMN3R3-80YSFX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R3-80YSFX is usually 5 days.

3.What payment methods are accepted for PSMN3R3-80YSFX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R3-80YSFX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R3-80YSFX?

PSMN3R3-80YSFX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R3-80YSFX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R3-80YSFX?

For technical support, including PSMN3R3-80YSFX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R3-80YSFX requirements.

6.How does Aetrix verify that PSMN3R3-80YSFX is sourced from the original manufacturer or authorized distributors?

All PSMN3R3-80YSFX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R3-80YSFX meets industry standards.

7.What is the process for return or replacement of PSMN3R3-80YSFX?

All PSMN3R3-80YSFX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R3-80YSFX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R3-80YSFX part is unused and in its original packaging.

Return procedure for PSMN3R3-80YSFX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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