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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R4-30BL,118

Name: PSMN3R4-30BL,118
Brand: Nexperia USA Inc.
SKU: PSMN3R4-30BL,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R4-30BL,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN3R4-30BL,118.pdf

Description:: MOSFET N-CH 30V 100A D2PAK

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Product details

Overview

PSMN3R4-30BL from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V V_DS, 3.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in high-current DC-DC converters and server power supplies.

For engineers reviewing the PSMN3R4-30BL datasheet, PSMN3R4-30BL pinout, PSMN3R4-30BL application, or PSMN3R4-30BL equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, avalanche energy rating of 200 mJ, thermal resistance R_th(j-mb) of 0.65 K/W, and D2PAK mounting base configuration for enhanced heatsinking.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges from 1.3 V to 2.15 V at 25 °C and drops to 0.5 V at 175 °C, enabling robust turn-on under high-temperature operation.

It features integrated source-drain diode with 36 ns reverse recovery time and 28 nC recovered charge, supporting synchronous rectification. The device's C_iss = 3907 pF and Q_G(tot) = 64 nC at V_GS = 10 V reflect fast switching capability suitable for high-frequency power stages up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input systems and 12 V output rails.
R_DS(on)	3.3 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-efficiency server PSUs.
I_D	100 A continuous @ T_mb = 25 °C - Supports high-current load switching without external parallel devices.
R_th(j-mb)	0.65 K/W - Low thermal resistance enables direct mounting to heatsink, sustaining 175 °C junction temperature.
E_AS	200 mJ unclamped avalanche energy - Provides ruggedness against inductive switching transients in motor control.
Q_G(tot)	64 nC @ V_GS = 10 V - Determines gate driver strength requirement; compatible with standard 1-A peak drivers.
V_GS(th)	1.7 V typical @ 25 °C - Ensures full enhancement with 3.3 V or 5 V logic-level controllers without level-shifting.
C_iss	3907 pF @ V_DS = 15 V - Impacts high-frequency switching losses and EMI behavior in hard-switched topologies.

Pinout & Package

D2PAK (SOT404) package with isolated mounting base connected to drain; thermally optimized for PCB surface-mounting with screw-down heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level drive; 1.7 V threshold ensures compatibility with 3.3 V microcontrollers.
2 (D)	Drain	Main high-side power path; electrically and thermally tied to mounting base for efficient heat extraction.
3 (S)	Source	Power return node; referenced to gate drive circuit ground; defines common-source switching topology.
Mounting Base (mb)	Drain / Thermal Interface	Exposed copper pad soldered to PCB thermal plane; provides primary thermal path (0.65 K/W) and electrical connection to drain.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate driver ICs in 5 V/3.3 V control systems.
High-temperature qualification	Rated for continuous operation up to T_j = 175 °C, enabling use in sealed industrial enclosures without derating.
Low R_DS(on) at elevated T_j	5.3 mΩ @ T_j = 175 °C ensures predictable conduction loss in thermal-stressed environments like server racks.
Avalanche-rated	200 mJ non-repetitive E_AS supports reliable operation during inductive load turn-off without snubbers.
Optimized dynamic parameters	Q_GD/Q_G(tot) ratio of ~0.125 improves Miller immunity and reduces switching oscillation risk in high-dV/dt applications.

Applications

Server Power Supplies

Industrial DC-DC Converters

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V intermediate bus converters delivering >200 A per rail.

IC Role / Device Role / Timing Role: High-side power switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 3.3 mΩ R_DS(on) minimizes conduction loss while 0.65 K/W R_th(j-mb) sustains 175 °C junction temperature under full load.

Use Scenario: Output stage switch in isolated 24 V input, 5 V/3.3 V output telecom power modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier controlled by transformer-coupled gate drive.

Use Value: 36 ns t_rr and 28 nC Q_r reduce body-diode conduction loss and improve efficiency by >1.2% at 250 kHz.

Motor Control (BLDC)

High-Current Load Switching

Use Scenario: Half-bridge leg in 24 V/48 V brushless DC motor drives for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Low-side switching element handling 60 A peak phase current with PWM commutation.

Use Value: 200 mJ E_AS withstands flyback energy from motor inductance during rapid PWM transitions.

Use Scenario: Main battery disconnect switch in 24 V industrial battery management systems with >80 A continuous load.

IC Role / Device Role / Timing Role: Single-pole, high-current solid-state relay replacing electromechanical contactors.

Use Value: 100 A I_D rating and 114 W P_tot allow direct replacement without parallel devices or forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	Higher R_DS(on) (4.0 mΩ), higher Q_G (71 nC), TO-220 package, not logic-level (V_GS(th) = 2–4 V).	Requires 10 V gate drive; less suitable for 3.3 V controller interfaces; lower thermal performance (R_th(j-c) ≈ 1.2 K/W).	Choose only if legacy TO-220 footprint is mandatory and gate drive voltage ≥10 V is available.
STL220N3LLH6	Lower R_DS(on) (2.2 mΩ), same D2PAK package, logic-level (V_GS(th) = 1.5 V), but lower avalanche rating (120 mJ).	Better conduction efficiency but reduced ruggedness in inductive switching; limited to ≤150 °C T_j.	Select when maximum efficiency is prioritized over transient overload margin in well-controlled DC-DC designs.

Compared with IRF1404PBF, PSMN3R4-30BL offers superior logic-level compatibility and thermal performance; versus STL220N3LLH6, it trades 1.1 mΩ higher R_DS(on) for +67% avalanche energy and extended 175 °C operation-critical for industrial reliability.

Availability

PSMN3R4-30BL is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and high-current load switching requiring stable component supply across multi-year production cycles.

Supply support for PSMN3R4-30BL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's Logic Level Power MOSFET product line, engineered for high-efficiency, high-temperature switching in industrial power conversion, motor control, and communications infrastructure.

FAQ

Is PSMN3R4-30BL suitable for 3.3 V microcontroller gate drive?

Yes. With a typical V_GS(th) of 1.7 V and guaranteed enhancement at V_GS ≥ 4.5 V, the device achieves full conduction using standard 3.3 V GPIO outputs. R_DS(on) remains 3.8 mΩ at V_GS = 4.5 V and T_j = 25 °C, ensuring low-loss operation without external level shifters.

What is the maximum continuous current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, continuous drain current drops to approximately 65 A at T_mb = 100 °C due to thermal derating. This reflects the package-limited current, not silicon limitation, and assumes proper PCB copper area and heatsinking per SOT404 layout guidelines.

Can PSMN3R4-30BL replace older D2PAK MOSFETs like PSMN2R8-30YL in existing designs?

Yes, with verification. Both share D2PAK (SOT404) footprint and 30 V rating, but PSMN3R4-30BL has higher R_DS(on) (3.3 mΩ vs. 2.8 mΩ) and lower Q_G (64 nC vs. 75 nC). Layout compatibility is confirmed; thermal design must accommodate slightly higher conduction loss at identical current.

Does the mounting base require electrical isolation from the heatsink?

No. The mounting base is internally connected to the drain terminal, so direct metal-to-metal contact with the heatsink is required for optimal thermal performance. Electrical isolation (e.g., mica washers) must be avoided unless high-voltage isolation is explicitly needed-and then a different package (e.g., TO-247 with isolated tab) should be selected.

PSMN3R4-30BL,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3907 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN3R4-30BL,118 FAQ

1.How can I place an order for PSMN3R4-30BL,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R4-30BL,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R4-30BL,118 reliable?

The price and inventory of PSMN3R4-30BL,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R4-30BL,118 is usually 5 days.

3.What payment methods are accepted for PSMN3R4-30BL,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R4-30BL,118 transactions.

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4.How is shipping managed for PSMN3R4-30BL,118?

PSMN3R4-30BL,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R4-30BL,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R4-30BL,118?

For technical support, including PSMN3R4-30BL,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R4-30BL,118 requirements.

6.How does Aetrix verify that PSMN3R4-30BL,118 is sourced from the original manufacturer or authorized distributors?

All PSMN3R4-30BL,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R4-30BL,118 meets industry standards.

7.What is the process for return or replacement of PSMN3R4-30BL,118?

All PSMN3R4-30BL,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R4-30BL,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R4-30BL,118 part is unused and in its original packaging.

Return procedure for PSMN3R4-30BL,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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