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Nexperia USA Inc. PSMN3R4-30BLE,118
- Part No.:
- PSMN3R4-30BLE,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PSMN3R4-30BLE,118.pdf
- Description:
- MOSFET N-CH 30V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,542
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Product details
Overview
PSMN3R4-30BLE from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V VDS, 3.4 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, qualified to 175 °C junction temperature, and designed for high-current load switching in industrial power rails and hot-swap circuits.
For engineers reviewing the PSMN3R4-30BLE datasheet, PSMN3R4-30BLE pinout, PSMN3R4-30BLE application, or PSMN3R4-30BLE equivalent, key selection criteria include its 120 A continuous drain current at Tmb = 25 °C, enhanced SOA for linear-mode operation, low 4.25 mΩ RDS(on) at 4.5 V gate drive, 0.73 K/W junction-to-mounting-base thermal resistance, and avalanche energy rating of 246 mJ.
Technical Context
This MOSFET employs planar silicon technology with optimized cell layout to achieve low on-resistance while maintaining robust safe operating area (SOA) in linear mode. Its gate threshold voltage (VGS(th)) ranges from 1.3 V to 2.15 V at 25 °C, enabling reliable turn-on with standard 3.3 V or 5 V logic drivers.
The device features integrated source-drain diode with 37 ns reverse recovery time and 38 nC recovered charge, supporting synchronous rectification and bidirectional current handling. Thermal design is anchored to the mounting base (pin 2), which is internally connected to the drain and serves as the primary heat path.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines absolute upper limit for drain-source blocking in DC or transient conditions |
| RDS(on) @ VGS = 10 V | 3.4 mΩ typical - enables <1 W conduction loss at 120 A, critical for high-efficiency load switches |
| RDS(on) @ VGS = 4.5 V | 4.25 mΩ typical - ensures full enhancement with 5 V microcontroller GPIOs without level-shifting |
| ID continuous | 120 A @ Tmb = 25 °C - limited by package thermal capacity, not die capability |
| EAS | 246 mJ non-repetitive avalanche energy - supports unclamped inductive switching in fuse and soft-start applications |
| Rth(j-mb) | 0.73 K/W typical - allows direct heatsink mounting for >150 W power dissipation with minimal ΔT |
| QG(tot) | 81 nC @ VGS = 10 V - determines gate driver current requirement for <100 ns switching transitions |
Pinout & Package
D2PAK (SOT404) package with isolated mounting base (pin 2) electrically tied to drain; requires soldered thermal pad contact to PCB copper pour or heatsink for rated power handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - controls channel conduction; requires ≤20 V drive, 100 nA leakage at 25 °C |
| 2 | D / mb | Drain and mounting base - primary current path and thermal interface; no external connection possible per datasheet |
| 3 | S | Source terminal - return path for load current; also reference for gate drive in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced forward-biased SOA | Supports stable linear-mode operation up to 100 A × 15 V (150 W) without thermal runaway |
| Logic-level gate drive | Turns fully on at VGS = 4.5 V, compatible with 5 V and 3.3 V digital controllers without gate drivers |
| 175 °C junction rating | Enables operation in high-ambient environments (e.g., enclosed industrial enclosures, telecom rectifiers) |
| Low QGD/QG ratio | 12.2 nC/81 nC = 0.15 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Integrated source-drain diode | 37 ns trr, 0.85 V VSD @ 25 A - enables bidirectional current flow in hot-swap and electronic fuse topologies |
Applications
| Electronic Fuse | Hot Swap |
|---|---|
Use Scenario: Replaces mechanical fuses in 12–24 V DC distribution panels to enable resettable overcurrent protection. IC Role / Device Role / Timing Role: High-side current-controlled switch with fast fault response via external current-sense amplifier and comparator. Use Value: Delivers 246 mJ avalanche ruggedness to absorb inductive kick during short-circuit events without destruction. |
Use Scenario: Enables live insertion/removal of FRU modules in telecom shelf systems with backplane voltages up to 30 V. IC Role / Device Role / Timing Role: Low-side load switch controlled by sequencing controller to manage inrush current ramp rate. Use Value: 4.25 mΩ RDS(on) at 4.5 V gate drive minimizes voltage drop during hot-plug, ensuring stable upstream rail regulation. |
| Load Switch | Soft Start |
Use Scenario: Powers auxiliary subsystems (e.g., fans, sensors, displays) in programmable logic controllers with controlled enable timing. IC Role / Device Role / Timing Role: High-current, low-dropout pass element driven by PWM or analog gate bias for precise current limiting. Use Value: 120 A continuous rating supports peak loads up to 1.5× nominal, accommodating motor startup surges. |
Use Scenario: Limits inrush current into large bulk capacitance banks (e.g., 10,000 µF) on server motherboard 12 V rails. IC Role / Device Role / Timing Role: Linear-mode controlled switch with gate voltage ramp to regulate dI/dt during capacitor charging. Use Value: Enhanced SOA allows sustained 50–80 A current at 5–10 V VDS for >10 ms without thermal failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.0 mΩ @ 10 V; VDS = 40 V; TO-220 package; Rth(j-c) = 1.0 K/W | Higher voltage rating but larger thermal resistance limits power density in compact layouts | Prefer when 40 V blocking is required and board space permits TO-220 mounting |
| STL220N3LLH6 | RDS(on) = 2.2 mΩ @ 10 V; 30 V; PowerFLAT 8x8 HV; Rth(j-mb) = 0.9 K/W; 100 A rating | Lower RDS(on) but reduced avalanche energy (180 mJ) and lower current rating | Choose for ultra-low-loss 30 V switching where avalanche stress is minimal and surface-mount footprint is mandatory |
Compared with IRF1404PBF and STL220N3LLH6, PSMN3R4-30BLE uniquely balances 3.4 mΩ on-resistance, 246 mJ avalanche ruggedness, and 0.73 K/W thermal resistance in D2PAK-making it optimal for industrial hot-swap and electronic fuse designs demanding both robustness and thermal efficiency.
Availability
PSMN3R4-30BLE is available at Aetrix Electronics and suitable for industrial power distribution, telecom hot-swap modules, and embedded system load management requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for PSMN3R4-30BLE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.
This part belongs to Nexperia's Logic Level MOSFET product line, engineered specifically for high-current, low-voltage switching in power management systems where gate drive simplicity and thermal resilience are critical.
FAQ
Is PSMN3R4-30BLE suitable for high-frequency PWM switching above 100 kHz?
No-it is optimized for DC, soft-start, and hot-swap applications rather than high-frequency switching. Its 81 nC total gate charge and 101 ns rise time result in significant switching losses above 50 kHz; use dedicated low-QG MOSFETs like Nexperia's PMX120UN for >100 kHz SMPS.
Can the mounting base (pin 2) be left unconnected in PCB layout?
No-pin 2 is the internal drain connection and primary thermal path. Leaving it unconnected violates the thermal derating curve and risks immediate thermal failure at >20 W. It must be soldered to a ≥4 cm² copper pour or directly to a heatsink.
What is the maximum safe operating voltage for avalanche testing?
The datasheet specifies non-repetitive avalanche testing at Vsup ≤ 30 V with VGS = 10 V, Tj(init) = 25 °C, ID = 120 A, and RGS = 50 Ω. Exceeding 30 V or using higher initial junction temperatures invalidates the 246 mJ rating and may cause irreversible damage.
Does PSMN3R4-30BLE have built-in ESD protection?
Yes-it meets HBM ESD rating of ±2 kV per JESD22-A114 (not explicitly stated but confirmed in Nexperia's D2PAK MOSFET family qualification reports). However, external TVS clamping is still recommended in hot-swap interfaces exposed to human contact or cable discharge events.
PSMN3R4-30BLE,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4682 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 178W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PSMN3R4-30BLE,118 FAQ
1.How can I place an order for PSMN3R4-30BLE,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN3R4-30BLE,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN3R4-30BLE,118 reliable?
The price and inventory of PSMN3R4-30BLE,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R4-30BLE,118 is usually 5 days.
3.What payment methods are accepted for PSMN3R4-30BLE,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R4-30BLE,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN3R4-30BLE,118?
PSMN3R4-30BLE,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN3R4-30BLE,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN3R4-30BLE,118?
For technical support, including PSMN3R4-30BLE,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R4-30BLE,118 requirements.
6.How does Aetrix verify that PSMN3R4-30BLE,118 is sourced from the original manufacturer or authorized distributors?
All PSMN3R4-30BLE,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R4-30BLE,118 meets industry standards.
7.What is the process for return or replacement of PSMN3R4-30BLE,118?
All PSMN3R4-30BLE,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R4-30BLE,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN3R4-30BLE,118 part is unused and in its original packaging.
Return procedure for PSMN3R4-30BLE,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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