Nexperia USA Inc. PSMN3R4-30PL,127
- Part No.:
- PSMN3R4-30PL,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PSMN3R4-30PL,127.pdf
- Description:
- MOSFET N-CH 30V 100A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,583
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Product details
Overview
PSMN3R4-30PL from Nexperia is a logic-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 30 V VDS, 3.4 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 100 A continuous drain current at Tmb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in DC-DC converters and server power supplies.
For engineers reviewing the PSMN3R4-30PL datasheet, PSMN3R4-30PL pinout, PSMN3R4-30PL application, or PSMN3R4-30PL equivalent, this device is selected for low-RDS(on) switching in thermally demanding industrial and communications systems where logic-level gate drive compatibility and avalanche ruggedness (200 mJ) are critical.
Technical Context
This MOSFET employs planar silicon technology with optimized channel geometry to achieve low conduction loss while maintaining robust switching performance. Its gate threshold voltage (VGS(th)) ranges from 1.3 V to 2.15 V at 25 °C and drops to 0.5 V at 175 °C, enabling reliable turn-on across wide temperature ranges with standard 3.3 V/5 V logic drivers.
Thermal design is supported by a typical Rth(j-mb) of 0.65 K/W and mounting-base–referenced power derating curves. The integrated source-drain diode exhibits 0.7 V forward voltage at 10 A and 25 °C, with 36 ns reverse recovery time and 28 nC recovered charge-key for synchronous rectification and freewheeling applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage before avalanche; defines use in ≤24 V nominal bus systems with margin. |
| RDS(on) | 3.4 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current power stages. |
| ID | 100 A @ Tmb = 25 °C - Continuous current rating limited by TO-220AB package thermal capacity, not die. |
| QG(tot) | 31 nC @ VGS = 4.5 V - Low gate charge supports efficient 100–500 kHz switching with minimal driver loss. |
| EAS | 200 mJ unclamped avalanche energy - Confirmed ruggedness for inductive load switching without external snubbers. |
| VGS(th) | 1.7 V typ @ 25 °C - Ensures full enhancement with 3.3 V logic-level sources, reducing need for level shifters. |
| Rth(j-mb) | 0.65 K/W typ - Direct thermal path to heatsink enables compact thermal design in space-constrained power modules. |
Pinout & Package
TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3 leads; mounting base electrically connected to drain. Dimensions per IEC/JEDEC SC-46 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤20 V absolute max; 1 Ω internal gate resistance limits dV/dt-induced ringing. |
| 2 (D) | Drain | Main high-side power terminal; electrically tied to mounting base-requires insulated heatsink or isolation hardware. |
| 3 (S) | Source | Power return and reference node; forms common ground for gate drive and current sensing in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Turns fully on with 3.3 V or 5 V microcontroller outputs-eliminates need for dedicated gate drivers in cost-sensitive designs. |
| Low RDS(on) at elevated temperature | 6.46 mΩ @ VGS = 10 V, Tj = 175 °C-ensures stable conduction loss under sustained thermal stress in server PSUs. |
| High avalanche energy rating | 200 mJ unclamped EAS-supports reliable operation in motor control and relay driving where inductive kickback occurs. |
| Optimized dynamic characteristics | QGD/QG(tot) ratio of ~0.26-reduces Miller effect, improving switching speed and reducing cross-conduction risk in half-bridge topologies. |
| Integrated source-drain diode | 36 ns trr, 28 nC Qr-enables efficient freewheeling in buck converters without external Schottky diode. |
Applications
| DC-to-DC Converters | Server Power Supplies |
|---|---|
Use Scenario: Primary-side synchronous rectifier in 12 V input, 48 V output isolated DC-DC modules for AI accelerators. IC Role / Device Role / Timing Role: High-side power switch operating at 300 kHz with zero-voltage switching (ZVS) assist. Use Value: 3.4 mΩ RDS(on) reduces conduction loss by >40% versus 5 mΩ alternatives, directly improving full-load efficiency from 93.2% to 94.1%. |
Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for cloud data center racks. IC Role / Device Role / Timing Role: Bidirectional load switch managing hot-swap sequencing and fault isolation between parallel PSUs. Use Value: 175 °C Tj rating and 200 mJ EAS ensure reliability during transient overloads and inrush events without derating. |
| Motor Control | Load Switching |
Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial HVAC fans. IC Role / Device Role / Timing Role: Low-side switch controlling PWM phase current with 100 A peak capability. Use Value: 31 nC QG(tot) at 4.5 V enables fast turn-on using low-power gate drivers, reducing dead-time losses by 18%. |
Use Scenario: Main power distribution switch for 48 V telecom equipment backplane with inrush limiting. IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse with controlled soft-start via gate ramp. Use Value: 100 A continuous rating and 609 A pulsed IDM support 2× inrush surge without thermal shutdown or bond-wire fusing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3205PBF | RDS(on) = 8.0 mΩ @ 10 V; QG(tot) = 71 nC; Tj max = 175 °C; TO-220AB package. | Higher conduction and switching losses; less suitable for high-frequency, high-current DC-DC stages. | Select when cost is primary constraint and thermal margin allows higher RDS(on)-not recommended for >200 kHz operation. |
| STP30NF20 | VDS = 200 V; RDS(on) = 38 mΩ @ 10 V; QG(tot) = 45 nC; TO-220 package; logic-level compatible. | Higher voltage rating but significantly higher RDS(on); unsuitable for low-voltage, high-current applications like server PSUs. | Choose only if system requires >100 V blocking; otherwise, PSMN3R4-30PL delivers superior efficiency at 30 V. |
Compared with IRF3205PBF and STP30NF20, PSMN3R4-30PL offers the lowest RDS(on) and gate charge in its 30 V class, delivering measurable efficiency gains in thermally constrained, high-current applications-making it the preferred choice for modern server and industrial power designs.
Availability
PSMN3R4-30PL is available at Aetrix Electronics and suitable for DC-to-DC converters, server power supplies, and motor control systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for PSMN3R4-30PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.
This part belongs to Nexperia's Logic Level Power MOSFET product line, engineered for high-efficiency switching in industrial power conversion, communications infrastructure, and domestic equipment where thermal robustness and gate-drive simplicity are essential.
FAQ
Is PSMN3R4-30PL suitable for surface-mount assembly?
No. PSMN3R4-30PL uses a through-hole TO-220AB (SOT78) package with a metal mounting base designed for mechanical attachment to a heatsink. It is not compatible with reflow soldering or pick-and-place SMT processes. Thermal performance relies on direct mechanical mounting and thermal interface material.
What is the maximum safe operating temperature for continuous use?
The device is qualified for continuous operation up to 175 °C junction temperature (Tj). However, sustained operation above 150 °C requires careful thermal design due to RDS(on) increase-typical RDS(on) rises to 6.46 mΩ at 175 °C, doubling conduction loss versus 25 °C.
Does the mounting base require electrical isolation?
Yes. Pin 2 (Drain) and the mounting base are internally connected. When mounted to a heatsink, an electrically insulating pad or washer must be used unless the heatsink is intentionally referenced to the drain potential-failure to isolate risks short circuits in grounded-system layouts.
Can PSMN3R4-30PL replace older 30 V MOSFETs like IRF1404 in existing designs?
Yes, with verification. PSMN3R4-30PL offers lower RDS(on) (3.4 mΩ vs. 4.0 mΩ), lower QG(tot) (31 nC vs. 131 nC), and identical TO-220AB footprint. Gate threshold is lower (1.7 V vs. 2.0 V), improving logic-level compatibility-but layout review for gate drive stability and thermal margin is required.
PSMN3R4-30PL,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3907 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 114W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PSMN3R4-30PL,127 FAQ
1.How can I place an order for PSMN3R4-30PL,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN3R4-30PL,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN3R4-30PL,127 reliable?
The price and inventory of PSMN3R4-30PL,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R4-30PL,127 is usually 5 days.
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Once your PSMN3R4-30PL,127 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for PSMN3R4-30PL,127?
For technical support, including PSMN3R4-30PL,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R4-30PL,127 requirements.
6.How does Aetrix verify that PSMN3R4-30PL,127 is sourced from the original manufacturer or authorized distributors?
All PSMN3R4-30PL,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R4-30PL,127 meets industry standards.
7.What is the process for return or replacement of PSMN3R4-30PL,127?
All PSMN3R4-30PL,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R4-30PL,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN3R4-30PL,127 part is unused and in its original packaging.
Return procedure for PSMN3R4-30PL,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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