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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R5-25MLDX

Name: PSMN3R5-25MLDX
Brand: Nexperia USA Inc.
SKU: PSMN3R5-25MLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R5-25MLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN3R5-25MLDX.pdf

Description:: MOSFET N-CH 25V 70A LFPAK33

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Product details

Overview

PSMN3R5-25MLDX from Nexperia is an N-channel 25 V logic-level MOSFET in LFPAK33 (SOT1210) package, featuring 3.72 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 70 A continuous drain current, and NextPowerS3 SchottkyPlus technology enabling soft-recovery (s-factor > 1) with < 1 µA leakage at 25 °C. It serves as a high-efficiency synchronous rectifier or power switch in server DC/DC converters and POL modules.

For engineers reviewing the PSMN3R5-25MLDX datasheet, PSMN3R5-25MLDX pinout, PSMN3R5-25MLDX application, or PSMN3R5-25MLDX equivalent, key selection criteria include gate charge (Q_G(tot) = 10.7 nC), thermal resistance (R_th(j-mb) = 2.08 K/W), ultra-low Q_GD (2.1 nC), optimized 4.5 V drive capability, and avalanche ruggedness (E_AS = 106.6 mJ).

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus body diode integration, delivering low spiking and ringing for EMI-sensitive high-frequency switching (e.g., >500 kHz VRMs). Its LFPAK33 clip-bonded construction eliminates wire bonds and glue, enabling 175 °C junction operation and robust thermal performance via exposed mounting base (drain-connected).

The device features a logic-level gate threshold (V_GS(th) = 1.2–2.2 V), low parasitic inductance, and fast switching (t_r = 12.9 ns, t_f = 7 ns) with soft reverse recovery (trr = 24.4 ns, Q_r = 13.5 nC), making it suitable for secondary-side synchronous rectification where diode conduction loss and recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 24 V input rail systems and POL applications.
R_DS(on)	3.72 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current VRMs.
I_D	70 A continuous @ T_mb = 25 °C - Limited by LFPAK33 package thermal capacity, not silicon.
Q_G(tot)	10.7 nC @ V_GS = 10 V - Low gate charge reduces driver power and enables efficient 1 MHz+ switching.
R_th(j-mb)	2.08 K/W - Mounting-base thermal path supports direct heatsinking for high-power density designs.
trr / Q_r	24.4 ns / 13.5 nC - Fast, soft recovery minimizes voltage overshoot and EMI in synchronous rectifier topologies.
E_AS	106.6 mJ - Non-repetitive avalanche energy rating ensures robustness against inductive load transients.

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, solder-die-attached surface-mount package with exposed copper leads for visual solder inspection and low-inductance, high-current routing. The mounting base (mb) is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input optimized for 4.5 V logic-level drive; low C_iss (1334 pF) eases driver design.
mb	Mounting Base (Drain)	Exposed copper pad tied to drain; provides primary thermal path and low-inductance high-current return.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft recovery (s-factor = 1.1), <1 µA leakage at 25 °C - Eliminates need for external Schottky while avoiding leakage penalty.
Ultra-low Q_GD	2.1 nC @ V_GS = 4.5 V - Reduces Miller-induced switching delay and improves hard-switching efficiency.
Optimized for 4.5 V drive	R_DS(on) = 4.46 mΩ @ V_GS = 4.5 V, I_D = 20 A - Ensures full enhancement with standard logic-level controllers.
Clip-bonded die attach	Qualified to 175 °C junction temperature - Enables reliable operation in thermally constrained telecom and server environments.
Low parasitic inductance	No wire bonds; exposed source/gate leads - Minimizes voltage spikes during turn-off, easing EMI filter design.

Applications

Server On-Board DC/DC Converters

Telecom Secondary-Side Synchronous Rectification

Use Scenario: High-density 12 V input → 1 V/100 A output buck converter on server motherboard.

IC Role / Device Role / Timing Role: Primary high-side or synchronous rectifier MOSFET operating at 600–800 kHz.

Use Value: 3.72 mΩ R_DS(on) and 10.7 nC Q_G enable >95% efficiency at full load; low trr prevents cross-conduction losses.

Use Scenario: Isolated forward or LLC secondary-side rectification in 48 V telecom PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in 200–500 kHz operation.

Use Value: SchottkyPlus diode delivers 0.82 V V_SD and soft recovery (trr = 24.4 ns), reducing heat sink size and EMI filtering cost.

GPU/ASIC Point-of-Load Modules

Brushless Motor Control Inverters

Use Scenario: Compact 0.8–1.2 V, 60 A POL regulator supplying GPU core voltage.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck stage with 1 MHz+ switching frequency.

Use Value: 2.08 K/W R_th(j-mb) allows direct PCB copper heatsinking; ultra-low Q_GD maintains phase alignment across phases.

Use Scenario: 24 V BLDC inverter for industrial fans or pumps with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 30–40 A peak motor current.

Use Value: Avalanche rating (106.6 mJ) withstands inductive kickback; exposed mb pad simplifies thermal management in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN4R3-25MLD	Higher R_DS(on) (4.3 mΩ @ 10 V), identical LFPAK33 package and 25 V rating.	Slightly lower current capability (65 A vs. 70 A); same thermal and switching specs.	Select when marginally higher conduction loss is acceptable for cost optimization in non-critical POL rails.
IRLHS6342	SO-8 package (not LFPAK33), 3.3 mΩ R_DS(on), but higher Q_G (22 nC) and no SchottkyPlus diode.	Limited thermal performance (R_th(j-a) ~50 K/W vs. 2.08 K/W to mb); unsuitable for >30 A continuous.	Choose only for legacy SO-8 board compatibility; avoid in new high-current, high-frequency designs due to inferior thermal and EMI behavior.

Compared with PSMN4R3-25MLD, the PSMN3R5-25MLDX offers 0.58 mΩ lower R_DS(on) and 5 A higher current rating-critical for 100 A+ multi-phase VRMs. Against IRLHS6342, its LFPAK33 package delivers 25× better thermal resistance and integrated soft-recovery diode, eliminating external snubbers in synchronous rectifiers.

Availability

PSMN3R5-25MLDX is available at Aetrix Electronics and suitable for server DC/DC converters, telecom synchronous rectifiers, and GPU point-of-load modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN3R5-25MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and computing infrastructure where low R_DS(on), fast soft switching, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current for PSMN3R5-25MLDX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current remains 70 A per Figure 2 of the datasheet, as current is capped by the LFPAK33 package limitation-not silicon-across the full rated temperature range up to 100 °C.

Does PSMN3R5-25MLDX require a gate resistor for safe operation in 1 MHz switching applications?

A gate resistor is recommended: 2.2–4.7 Ω external resistance limits peak gate current and dV/dt-induced oscillation, especially given its low Q_G (10.7 nC) and fast rise time (12.9 ns); omission risks shoot-through in half-bridge configurations.

How does the SchottkyPlus body diode compare to a discrete Schottky in reverse recovery performance?

The SchottkyPlus diode achieves trr = 24.4 ns and Q_r = 13.5 nC-comparable to a 45 V Schottky-while maintaining <1 µA leakage at 25 °C, unlike conventional Schottkys which exceed 100 µA leakage at same voltage rating.

Can PSMN3R5-25MLDX be used in linear-mode (saturation) operation for hot-swap or inrush control?

No-it is not characterized or qualified for linear-mode operation; Safe Operating Area (SOA) curves in Figure 3 show only pulsed and DC boundaries up to 25 V, with no extended linear region defined for sustained V_DS/I_D combinations.

PSMN3R5-25MLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.72mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 18.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1334 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN3R5-25MLDX FAQ

1.How can I place an order for PSMN3R5-25MLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R5-25MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R5-25MLDX reliable?

The price and inventory of PSMN3R5-25MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R5-25MLDX is usually 5 days.

3.What payment methods are accepted for PSMN3R5-25MLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R5-25MLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R5-25MLDX?

PSMN3R5-25MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R5-25MLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R5-25MLDX?

For technical support, including PSMN3R5-25MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R5-25MLDX requirements.

6.How does Aetrix verify that PSMN3R5-25MLDX is sourced from the original manufacturer or authorized distributors?

All PSMN3R5-25MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R5-25MLDX meets industry standards.

7.What is the process for return or replacement of PSMN3R5-25MLDX?

All PSMN3R5-25MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R5-25MLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R5-25MLDX part is unused and in its original packaging.

Return procedure for PSMN3R5-25MLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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