Nexperia USA Inc. PSMN3R5-30YL,115

Overview

PSMN3R5-30YL from Nexperia is a logic-level N-channel enhancement-mode MOSFET using TrenchMOS technology in LFPAK56 (SOT669) package, rated for 30 V drain-source voltage, 3.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and capable of 100 A continuous drain current at T_mb = 25 °C. It serves as a high-efficiency power switch in DC-DC converters, motor control stages, and Class-D amplifier output stages.

For engineers reviewing the PSMN3R5-30YL datasheet, PSMN3R5-30YL pinout, PSMN3R5-30YL application, or PSMN3R5-30YL equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 0.6 K/W typical junction-to-mounting-base thermal resistance, avalanche ruggedness (54 mJ unclamped), and LFPAK56 footprint suitability for high-current surface-mount power designs.

Technical Context

This MOSFET employs TrenchMOS architecture to achieve low R_DS(on) and optimized gate charge (Q_G(tot) = 19 nC at V_GS = 4.5 V), enabling fast switching with reduced conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges from 1.3 V to 2.15 V at 25 °C, ensuring reliable turn-on with standard 3.3 V or 5 V logic drivers.

The device integrates an intrinsic body diode with 37 ns reverse recovery time and 31 nC recovered charge, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is facilitated by direct mounting-base thermal path (R_th(j-mb) typ. 0.6 K/W) and 74 W total power dissipation at T_mb = 25 °C.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) plastic single-ended surface-mounted package with exposed mounting base connected to drain; optimized for high-current, low-inductance PCB layouts and efficient thermal transfer to heatsink or copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPP036N04L and SiR872DP, PSMN3R5-30YL delivers superior thermal performance via its dedicated mounting base, lower gate charge for logic-level drive, and optimized pinout for high-frequency, high-current switching - making it preferred for space- and efficiency-constrained industrial and communications power designs.

Availability

PSMN3R5-30YL is available at Aetrix Electronics and suitable for Class-D amplifiers, server DC-DC converters, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN3R5-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This part belongs to Nexperia's LFPAK logic-level MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power supplies, motor drives, and communications infrastructure where thermal performance and gate-drive simplicity are critical.

FAQ

Is PSMN3R5-30YL suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.3–2.15 V at 25 °C and guaranteed turn-on at V_GS = 4.5 V, the device fully enhances using standard 3.3 V GPIO outputs. Its low Q_G(tot) (19 nC) ensures minimal gate drive power and fast switching without external buffer stages.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is derated to approximately 86 A at T_mb = 100 °C. This value is determined by thermal limits-not package current rating-and assumes adequate PCB copper area for heat spreading.

Does PSMN3R5-30YL have avalanche rating, and how is it tested?

Yes. It is rated for 54 mJ non-repetitive unclamped avalanche energy (E_AS) under specified conditions: I_D = 100 A, V_sup ≤ 30 V, R_GS = 50 Ω, V_GS = 10 V, and T_j(init) = 25 °C. This rating validates robustness against inductive switching faults in motor and relay applications.

Can the mounting base be electrically isolated from the PCB ground plane?

No. The mounting base is internally connected to the drain terminal and must be routed to the drain net. Electrical isolation would compromise both electrical functionality and thermal performance. Thermal interface material may be used between the base and heatsink, but the copper pad must remain at drain potential.