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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R5-40YSBX

Name: PSMN3R5-40YSBX
Brand: Nexperia USA Inc.
SKU: PSMN3R5-40YSBX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R5-40YSBX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R5-40YSBX.pdf

Description:: PSMN3R5-40YSB/SOT669/LFPAK

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Product details

Overview

PSMN3R5-40YSBX from Nexperia is a standard-level N-channel MOSFET designed for high-current, high-efficiency power switching in industrial and motor control systems. It delivers 120 A continuous drain current at T_mb = 25 °C, features a 3.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, operates up to 175 °C junction temperature, and uses NextPowerS3 Schottky-Plus technology for soft body-diode recovery in DC-to-DC converters and brushed/BLDC motor drives.

For engineers reviewing the PSMN3R5-40YSBX datasheet, PSMN3R5-40YSBX pinout, PSMN3R5-40YSBX application, or PSMN3R5-40YSBX equivalent, key selection criteria include its LFPAK56 package thermal performance (R_th(j-mb) = 1.18 K/W), avalanche ruggedness (E_AS = 145 mJ), low Q_rr (14 nC), and 40 V V_DS rating for battery isolation and eFuse designs.

Technical Context

This MOSFET employs TrenchMOS Superjunction architecture optimized for enhanced EMC performance-demonstrated by up to 6 dB improvement-and integrates a Schottky-Plus body diode with low V_SD (0.8 V typ), soft reverse recovery (t_rr = 24 ns), and low leakage (I_DSS = 1.2 µA at 125 °C).

Its gate drive is compatible with standard 10 V logic-level sources, exhibits strong linear-mode SOA, and supports high peak currents (I_DM = 521 A) and unclamped avalanche energy (up to 243 mJ), enabling robust operation in inrush management and hot-swap circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum - defines safe operating voltage ceiling in 24–36 V battery and 48 V bus systems.
R_DS(on)	3.5 mΩ max at 10 V, 25 A, 25 °C - enables <1 W conduction loss at 120 A with proper thermal design.
I_D (cont)	120 A at T_mb = 25 °C - validated continuous current under real-world board-mount conditions.
Q_G(tot)	42 nC max - determines gate driver strength requirement for fast, low-loss switching at >100 kHz.
Q_rr	14 nC typical - reduces EMI and switching losses during diode commutation in synchronous rectifiers.
E_AS	145 mJ non-repetitive - supports single-pulse avalanche survival in load-dump or inductive turn-off events.
R_th(j-mb)	1.18 K/W typical - enables direct thermal coupling to heatsink via exposed mounting base for high-power density layouts.

Pinout & Package

LFPAK56 (SOT669) is a copper-clip, solder-die-attached Power-SO8 variant with exposed drain mounting base for superior thermal and electrical performance. Its 4-terminal layout supports wave soldering, visual joint inspection, and low-inductance PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source leads reduce package inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate terminal with low RG (0.8 Ω typ) for stable, fast turn-on/turn-off without oscillation.
Mounting Base (mb)	Drain (D)	Exposed copper drain pad provides primary thermal path to PCB/heatsink and low-inductance power return.

Key Features

Feature	Design Value
NextPowerS3 Schottky-Plus body diode	Soft recovery (t_a = 13 ns, t_b = 12 ns), low V_SD (0.8 V), and 14 nC Q_r minimize switching loss and EMI in freewheeling paths.
Avalanche rating	100% tested I_AS = 120 A and E_AS = 145 mJ - ensures reliability in unclamped inductive switching without derating.
LFPAK56 package	175 °C qualified, copper-clip construction, and wave-solderable leads - delivers board-level reliability exceeding traditional SO-8.
EMC-optimized structure	Up to 6 dB lower radiated emissions vs. prior generation - reduces need for external filtering in compact industrial drives.
Strong linear-mode SOA	Rated for 100% of rated V_DS × I_D in resistive loads - supports robust operation in active current limiting and hot-swap FETs.

Applications

Brushless DC Motor Control

Battery Isolation

Use Scenario: High-efficiency 3-phase inverter stage in robotic joint actuators requiring precise torque control and thermal resilience.

IC Role / Device Role / Timing Role: Low-side switching element with fast, soft-body-diode recovery to minimize shoot-through risk and commutation loss.

Use Value: 3.5 mΩ R_DS(on) and 120 A rating enable >98% efficiency at 48 V/50 A, while 175 °C rating supports sealed enclosure operation.

Use Scenario: Bidirectional battery disconnect switch in portable medical equipment with strict fault-clearing timing and low standby loss.

IC Role / Device Role / Timing Role: Main power path FET controlled by system MCU to isolate battery during fault or sleep mode.

Use Value: Low I_DSS (1.2 µA at 125 °C) minimizes self-discharge; avalanche rating ensures survivability during sudden load dump.

DC-to-DC Converters

Industrial eFuse

Use Scenario: Synchronous rectifier in 48 V–12 V isolated buck converter for factory automation PLCs demanding high power density.

IC Role / Device Role / Timing Role: Secondary-side power switch with low Q_rr and fast switching to reduce dead-time losses.

Use Value: 14 nC Q_r and 24 ns t_rr cut reverse recovery loss by >40% vs. standard MOSFETs, improving full-load efficiency by 0.8%.

Use Scenario: Programmable overcurrent protection in modular I/O modules where fast trip (<100 µs) and low on-resistance are critical.

IC Role / Device Role / Timing Role: Load-switch FET with integrated current sensing and thermal foldback capability.

Use Value: Strong SOA and 1.18 K/W R_th(j-mb) allow sustained 80 A operation during fault clearing without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	40 V, 3.6 mΩ, 120 A, TO-252 package; higher R_th(j-a) (50 K/W vs. 85 K/W), no avalanche rating.	Limited to lower-power DC-DC where board space allows DPAK and avalanche stress is absent.	Choose when cost sensitivity outweighs thermal performance and ruggedness requirements.
Vishay SiR626DP	40 V, 3.3 mΩ, 120 A, PowerPAK SO-8; 150 °C rating, Q_rr = 22 nC, no 100% avalanche test.	Suitable for BLDC inverters with moderate EMC constraints but less tolerant of repetitive inductive spikes.	Prefer where lowest R_DS(on) is prioritized and thermal margin exists for 150 °C limit.

Compared with IPP036N04L and SiR626DP, PSMN3R5-40YSBX offers superior avalanche ruggedness, 175 °C operation, and lower Q_rr, making it optimal for thermally constrained, high-reliability industrial load switches and motor drives where failure modes include unclamped inductive energy.

Availability

PSMN3R5-40YSBX is available at Aetrix Electronics and suitable for brushless DC motor control, battery isolation, and industrial eFuse applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN3R5-40YSBX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to the NextPowerS3 Schottky-Plus series, engineered specifically for high-efficiency, low-EMI power conversion and robust load switching in automation, robotics, and energy infrastructure systems.

FAQ

What is the maximum continuous drain current for PSMN3R5-40YSBX under real PCB conditions?

The device is rated for 120 A continuous drain current at T_mb = 25 °C, verified in application testing. Practical current is limited by PCB copper area, thermal interface, and ambient temperature-Fig. 2 shows 92 A at T_mb = 100 °C. Derating must follow the normalized power curve in Fig. 1.

Does PSMN3R5-40YSBX require gate resistors for stable switching?

Yes-its low gate resistance (0.8 Ω typ) and 42 nC total gate charge make external gate resistors essential to control dV/dt and prevent ringing. A 5 Ω resistor is recommended for 100 kHz switching with 10 V drive, per Fig. 12 and Fig. 13 gate charge waveform definitions.

Can PSMN3R5-40YSBX be used in synchronous rectification with 20 V output?

Yes-its 40 V V_DS rating, 14 nC Q_r, and 24 ns t_rr make it well-suited for secondary-side synchronous rectification in 12–24 V output DC-DC converters. The Schottky-Plus diode's soft recovery prevents voltage overshoot during reverse recovery, reducing EMI and stress on adjacent components.

Is the mounting base electrically isolated from other terminals?

No-the mounting base (mb) is internally connected to the drain (D) terminal, as confirmed in Table 2 pinning information and Fig. 17 package outline. This requires careful PCB layout: the drain pad must be routed to the high-side DC bus or transformer secondary return, and isolation from source/gate planes is mandatory.

PSMN3R5-40YSBX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3220 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R5-40YSBX FAQ

1.How can I place an order for PSMN3R5-40YSBX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R5-40YSBX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R5-40YSBX reliable?

The price and inventory of PSMN3R5-40YSBX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R5-40YSBX is usually 5 days.

3.What payment methods are accepted for PSMN3R5-40YSBX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R5-40YSBX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R5-40YSBX?

PSMN3R5-40YSBX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R5-40YSBX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R5-40YSBX?

For technical support, including PSMN3R5-40YSBX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R5-40YSBX requirements.

6.How does Aetrix verify that PSMN3R5-40YSBX is sourced from the original manufacturer or authorized distributors?

All PSMN3R5-40YSBX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R5-40YSBX meets industry standards.

7.What is the process for return or replacement of PSMN3R5-40YSBX?

All PSMN3R5-40YSBX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R5-40YSBX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R5-40YSBX part is unused and in its original packaging.

Return procedure for PSMN3R5-40YSBX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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