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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R5-40YSD/2X

Name: PSMN3R5-40YSD/2X
Brand: Nexperia USA Inc.
SKU: PSMN3R5-40YSD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R5-40YSD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R5-40YSD/2X.pdf

Description:: PSMN3R5-40YSD/SOT669/LFPAK

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Product details

Overview

PSMN3R5-40YSD from Nexperia is an N-channel standard-level MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 3.5 mΩ R_DS(on) at V_GS = 10 V and 25 A, 120 A continuous drain current capability, and qualified for 175 °C operation. It delivers high-efficiency power switching in synchronous rectification and BLDC motor control with Schottky-Plus body diode and soft-recovery characteristics.

For engineers reviewing the PSMN3R5-40YSD datasheet, PSMN3R5-40YSD pinout, PSMN3R5-40YSD application, or PSMN3R5-40YSD equivalent, key selection criteria include its 3.5 mΩ on-resistance at 25 °C, 120 A current rating, 175 °C junction temperature capability, LFPAK56 thermal performance (R_th(j-mb) = 1.18 K/W), and avalanche-rated ruggedness (I_AS = 120 A).

Technical Context

This MOSFET uses Nexperia's NextPower-S3 TrenchMOS Superjunction technology with Schottky-Plus body diode integration, enabling superfast switching with soft reverse recovery (t_rr = 25 ns, Q_r = 16 nC). Its gate threshold voltage (V_GS(th) = 2.4–3.6 V) and tight distribution support stable paralleling in high-current designs.

The device features low dynamic parameters: Q_G(tot) = 31–44 nC, Q_GD = 5–10 nC, and C_iss/C_oss/C_rss = 2318/785/114 pF (typ.) at V_DS = 20 V, supporting high-frequency DC-DC conversion up to several hundred kHz while minimizing EMI and switching losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 12–36 V bus systems
R_DS(on)	3.5 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1 W conduction loss at 50 A
I_D (cont)	120 A at T_mb = 25 °C - validated continuous current under optimized thermal mounting
Q_G(tot)	31–44 nC - determines gate drive power and switching speed in hard-switched topologies
t_rr	25 ns typical - ensures minimal reverse recovery loss and reduced voltage overshoot in synchronous rectifiers
R_th(j-mb)	1.18 K/W typical - enables >100 W dissipation with modest heatsinking via mounting base
V_SD	0.83–1.2 V at I_S = 25 A, T_j = 25 °C - low forward drop of integrated Schottky-Plus body diode

Pinout & Package

LFPAK56 (SOT669) is a copper-clip, solder-die-attach surface-mount package with exposed mounting base connected to drain, optimized for high-power density and 175 °C operation. Its footprint supports wave and reflow soldering, with visual solder-joint inspection enabled by exposed leads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input with low RG (0.3–2 Ω) - compatible with standard 10 V logic-level drivers
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - primary heat path to PCB heatsink

Key Features

Feature	Design Value
NextPower-S3 Schottky-Plus body diode	Soft reverse recovery (t_rr = 25 ns) without high IDSS leakage - eliminates snubbers in synchronous rectifiers
Avalanche rating	100% tested at I_AS = 120 A - ensures robustness against inductive switching transients
Tighter V_GS(th) limits	2.4–3.6 V at 25 °C - improves current balance and thermal stability when paralleling multiple devices
Wide SOA	Linear-mode capable up to 120 A × 40 V - supports active current limiting and hot-swap protection circuits
175 °C qualified LFPAK56	Copper-clip construction with solder die attach - delivers reliability in automotive under-hood and industrial motor drives

Applications

Synchronous Rectification

DC-to-DC Converters

Use Scenario: Secondary-side switching in isolated 48 V–12 V buck converters for server VRMs and telecom PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 3.5 mΩ R_DS(on) and 0.83 V V_SD cut total rectifier loss by >40% vs. 40 V Schottky, enabling higher power density.

Use Scenario: High-current step-down regulation in 12 V input, 1 V/100 A output POL modules.

IC Role / Device Role / Timing Role: High-side main switch in multiphase buck converters operating at 300–500 kHz.

Use Value: Low Q_G (31–44 nC) and Q_GD (5–10 nC) minimize gate drive loss and enable fast, clean turn-on/turn-off transitions.

High-Efficiency Power Supplies

BLDC Motor Control

Use Scenario: Primary-side switching in 65–100 W GaN-assisted LLC resonant adapters with active clamp.

IC Role / Device Role / Timing Role: Secondary-side freewheeling FET in active clamp circuits requiring bidirectional conduction and soft recovery.

Use Value: Schottky-Plus diode enables zero-voltage switching (ZVS) during reverse conduction, reducing EMI and improving light-load efficiency.

Use Scenario: Inverter leg switching in 24–48 V, 500 W–1 kW brushless DC motor drives for e-bikes and power tools.

IC Role / Device Role / Timing Role: Low-side phase switch handling PWM commutation currents up to 120 A peak.

Use Value: 175 °C rating and wide SOA allow sustained linear-mode operation during startup/stall, preventing thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	R_DS(on) = 3.6 mΩ (typ.), Q_G = 42 nC, TO-220FP package, no Schottky-Plus diode	Larger footprint, higher thermal resistance (R_th(j-c) ≈ 1.8 K/W), no soft-recovery diode	Prefer PSMN3R5-40YSD where board space, thermal performance, or synchronous rectifier soft recovery is critical.
Vishay SiR626DP	R_DS(on) = 3.2 mΩ (typ.), Q_G = 47 nC, PowerPAK SO-8, standard body diode (t_rr = 45 ns)	Higher reverse recovery charge (Q_r ≈ 32 nC), less robust avalanche (I_AS = 80 A)	Prefer PSMN3R5-40YSD where low EMI, high avalanche ruggedness, or 175 °C operation is required.

Compared with IPP036N04L and SiR626DP, PSMN3R5-40YSD offers superior thermal performance via LFPAK56's low R_th(j-mb), verified avalanche ruggedness at full 120 A, and Schottky-Plus diode enabling lower-loss synchronous rectification without compromising leakage or reliability.

Availability

PSMN3R5-40YSD is available at Aetrix Electronics and suitable for synchronous rectification, BLDC motor control, high-efficiency power supplies, and DC-to-DC converter designs requiring stable component supply, high current density, and 175 °C operational reliability.

Supply support for PSMN3R5-40YSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for power management, signal integrity, and interface applications.

This device belongs to Nexperia's NextPower-S3 portfolio, engineered specifically for high-efficiency, high-current power switching in compact, thermally demanding environments such as server power supplies and motor inverters.

FAQ

What is the maximum continuous drain current for PSMN3R5-40YSD under real-world PCB conditions?

The datasheet specifies 120 A continuous current at T_mb = 25 °C with optimized thermal design - achieved using ≥25.4 mm² 70 µm copper area on FR4. Practical current is limited by PCB layout, heatsinking, and ambient temperature; at T_mb = 100 °C, rated current drops to 93 A per Figure 2.

Does PSMN3R5-40YSD support gate drive with 5 V logic-level controllers?

No - it is a standard-level MOSFET requiring V_GS ≥ 10 V for full R_DS(on) specification (3.5 mΩ). At V_GS = 5 V, R_DS(on) rises significantly (>10 mΩ); use only with 10 V or higher gate drive to achieve rated performance and avoid excessive conduction loss.

How does the Schottky-Plus body diode differ from a conventional MOSFET body diode?

The Schottky-Plus structure provides a low-V_SD (0.83 V), soft-recovery (t_rr = 25 ns, Q_r = 16 nC) intrinsic diode without the high reverse leakage (I_DSS) typical of true Schottky diodes - enabling efficient synchronous rectification while maintaining MOSFET-level off-state blocking integrity.

Can PSMN3R5-40YSD be used in linear mode (Ohmic region) for active current limiting?

Yes - it is fully characterized for linear-mode operation with a wide Safe Operating Area (SOA) up to 120 A × 40 V (DC), validated per Figure 3. Its 175 °C rating and copper-clip construction support sustained power dissipation in active current-limit or hot-swap applications when properly heatsunk.

PSMN3R5-40YSD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3245 pF @ 20 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R5-40YSD/2X FAQ

1.How can I place an order for PSMN3R5-40YSD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R5-40YSD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R5-40YSD/2X reliable?

The price and inventory of PSMN3R5-40YSD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R5-40YSD/2X is usually 5 days.

3.What payment methods are accepted for PSMN3R5-40YSD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R5-40YSD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R5-40YSD/2X?

PSMN3R5-40YSD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R5-40YSD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R5-40YSD/2X?

For technical support, including PSMN3R5-40YSD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R5-40YSD/2X requirements.

6.How does Aetrix verify that PSMN3R5-40YSD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN3R5-40YSD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R5-40YSD/2X meets industry standards.

7.What is the process for return or replacement of PSMN3R5-40YSD/2X?

All PSMN3R5-40YSD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R5-40YSD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R5-40YSD/2X part is unused and in its original packaging.

Return procedure for PSMN3R5-40YSD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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