Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R5-80PS,127

Name: PSMN3R5-80PS,127
Brand: Nexperia USA Inc.
SKU: PSMN3R5-80PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN3R5-80PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN3R5-80PS,127.pdf

Description:: MOSFET N-CH 80V 120A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,579

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN3R5-80PS from Nexperia is an N-channel standard-level power MOSFET in TO-220AB (SOT78) package, rated for 80 V V_DS, 3.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 120 A continuous drain current, and qualified to 175 °C junction temperature. It serves as a high-current load switch or synchronous rectifier in server power supplies and motor control circuits.

For engineers reviewing the PSMN3R5-80PS datasheet, PSMN3R5-80PS pinout, PSMN3R5-80PS application, or PSMN3R5-80PS equivalent, this device is selected for high-efficiency DC-to-DC conversion where low conduction loss, standard 10 V gate drive compatibility, and robust avalanche energy handling (676 mJ) are critical design requirements.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining ruggedness under unclamped inductive switching. Its gate threshold voltage (2–4 V typ.) ensures reliable turn-on with standard logic-level or microcontroller-driven gate drivers.

The device features a built-in body diode with 63 ns reverse recovery time and 121 nC recovered charge, enabling use in freewheeling paths without external diodes in many hard-switched topologies. Thermal resistance from junction to mounting base is 0.22–0.44 K/W, supporting high-power dissipation when heatsink-mounted.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage in power stage applications like 48 V server rails or 24 V motor drives.
R_DS(on)	3.5 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-efficiency power delivery.
I_D	120 A continuous @ T_mb = 25 °C - Supports high-current load switching in industrial power modules and server VRMs.
E_AS	676 mJ non-repetitive avalanche energy - Withstands unclamped inductive turn-off events in motor control or relay driving.
Q_G(tot)	139 nC - Determines gate driver power requirement and switching speed in hard-switched converters operating up to ~200 kHz.
R_th(j-mb)	0.22–0.44 K/W - Requires direct mechanical mounting to heatsink for thermal management; enables >300 W power handling with adequate cooling.
C_iss	9961 pF @ V_DS = 40 V - Influences gate drive loop stability and EMI behavior in high-frequency switching designs.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink mounting, 1 mounting hole, and 3 leads. Mounting base (tab) is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; internal gate resistance is 0.9 Ω (AC).
2 (D)	Drain	Main high-side or low-side power path; tab-connected for thermal and electrical integration with heatsink.
3 (S)	Source	Reference node for gate drive; connects to ground (low-side) or output rail (high-side) depending on topology.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	3.5 mΩ @ 25 °C enables <0.9 W conduction loss at 50 A, reducing thermal stress in compact power stages.
High avalanche ruggedness	676 mJ E_AS allows safe operation in inductive load switching without snubbers in motor control and solenoid drivers.
175 °C junction rating	Supports operation in high-ambient environments (e.g., enclosed server chassis) without derating below 120 A at T_mb = 25 °C.
Standard-level gate drive	V_GS(th) of 2–4 V ensures compatibility with 5 V or 10 V microcontrollers and gate drivers without level-shifting circuitry.
Optimized body diode	63 ns t_rr and 121 nC Q_r reduce switching losses and voltage overshoot during freewheeling in buck or half-bridge configurations.

Applications

Server Power Supplies

DC-to-DC Converters

Use Scenario: Primary-side synchronous rectification and secondary-side high-current OR-ing in 48 V/12 V intermediate bus converters.

IC Role / Device Role: High-current N-channel power switch operating in hard-switched buck or LLC resonant topologies.

Use Value: 3.5 mΩ R_DS(on) minimizes conduction loss at 80–120 A loads, improving efficiency above 95% in 1 kW+ server PSUs.

Use Scenario: Output stage switching in isolated or non-isolated point-of-load (POL) converters for FPGA and ASIC core voltage regulation.

IC Role / Device Role: Low-side or high-side power FET in synchronous buck regulators delivering up to 100 A at ≤1 V.

Use Value: 139 nC total gate charge and 0.22 K/W thermal resistance enable fast switching with manageable driver loss and stable thermal performance.

Motor Control

Load Switch

Use Scenario: Half-bridge leg in 24 V brushed DC motor drivers for industrial actuators and HVAC blowers.

IC Role / Device Role: High-current switching element subjected to inductive flyback and PWM commutation.

Use Value: 676 mJ avalanche energy rating eliminates need for external clamping diodes during inductive turn-off transients.

Use Scenario: Hot-swap and inrush current limiting in industrial backplane power distribution units (PDUs).

IC Role / Device Role: Main power path switch controlling 48 V or 24 V system rail activation with soft-start capability.

Use Value: Standard 10 V gate drive simplifies control interface; 120 A rating supports peak surge currents up to 803 A (10 µs pulse).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N80ZFP	80 V, 10.5 mΩ R_DS(on), TO-247 package, higher R_DS(on) and larger footprint.	Lower current density; suited for lower-frequency (<100 kHz), higher-voltage margin designs with less thermal constraint.	Select when board space allows TO-247 and thermal budget permits higher conduction loss.
IRF1405PBF	55 V, 5.3 mΩ R_DS(on), TO-220 package, lower voltage rating but similar on-resistance at 10 V drive.	Not suitable for 48 V systems requiring 80 V blocking; limited to ≤40 V DC bus applications.	Choose only for 24 V motor or power supply designs where 55 V V_DS suffices and cost is prioritized over voltage headroom.

Compared with PSMN3R5-80PS, STP120N80ZFP trades lower thermal resistance for higher R_DS(on) and larger package, while IRF1405PBF offers comparable on-resistance but insufficient voltage margin for modern 48 V infrastructure-making PSMN3R5-80PS optimal for high-current, 80 V-class industrial power switching.

Availability

PSMN3R5-80PS is available at Aetrix Electronics and suitable for server power supplies, DC-to-DC converters, and motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for PSMN3R5-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for high-efficiency, thermally robust switching in industrial power conversion, communications infrastructure, and domestic equipment.

FAQ

Is PSMN3R5-80PS suitable for high-frequency switching above 500 kHz?

No. With 139 nC total gate charge and 9961 pF input capacitance, its gate drive requirements and switching losses increase significantly above 200 kHz. It is optimized for hard-switched applications up to 200 kHz, such as server VRMs and industrial DC-DC converters-not RF or resonant topologies requiring ultra-low Q_G.

Can PSMN3R5-80PS be used in a high-side configuration with 12 V gate drive?

Yes. Its gate threshold voltage (2–4 V typ.) and 20 V maximum V_GS rating allow reliable enhancement using 12 V gate drive. However, a dedicated high-side driver with bootstrap or isolated supply is required to maintain V_GS ≥10 V during full conduction, especially at elevated temperatures where R_DS(on) rises.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Based on Figure 1 in the datasheet, continuous drain current drops to approximately 75 A at T_mb = 100 °C due to thermal derating. This reflects the package-limited current, not silicon limitation, and assumes proper heatsinking per the TO-220AB mounting guidelines.

Does the body diode support synchronous rectification in buck converters?

It can be used for asynchronous operation, but its 63 ns reverse recovery time and 121 nC recovered charge make it suboptimal for high-frequency synchronous rectification. For true synchronous buck designs, a dedicated low-Q_r MOSFET or Schottky diode is preferred to minimize switching loss and voltage spike.

PSMN3R5-80PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9961 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 338W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN3R5-80PS,127 FAQ

1.How can I place an order for PSMN3R5-80PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R5-80PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R5-80PS,127 reliable?

The price and inventory of PSMN3R5-80PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R5-80PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN3R5-80PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R5-80PS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R5-80PS,127?

PSMN3R5-80PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R5-80PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R5-80PS,127?

For technical support, including PSMN3R5-80PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R5-80PS,127 requirements.

6.How does Aetrix verify that PSMN3R5-80PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN3R5-80PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R5-80PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN3R5-80PS,127?

All PSMN3R5-80PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R5-80PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R5-80PS,127 part is unused and in its original packaging.

Return procedure for PSMN3R5-80PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…