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NXP Semiconductors PSMN3R7-25YLC,115

Name: PSMN3R7-25YLC,115
Brand: NXP Semiconductors
SKU: PSMN3R7-25YLC,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R7-25YLC,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN3R7-25YLC,115.pdf

Description:: MOSFET N-CH 25V 97A LFPAK56

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Product details

Overview

PSMN3R7-25YLC from NXP Semiconductors is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 25 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 97 A continuous drain current at T_mb = 25 °C and is optimized for 4.5 V gate drive in high-efficiency DC-to-DC converters and server power supplies.

For engineers reviewing the PSMN3R7-25YLC datasheet, PSMN3R7-25YLC pinout, PSMN3R7-25YLC application, or PSMN3R7-25YLC equivalent, key selection criteria include its ultra-low Q_G (10.1 nC @ 4.5 V), low R_DS(on) over temperature, LFPAK thermal performance (R_th(j-mb) = 2.14 K/W), and NextPower Superjunction architecture enabling high system efficiency at both light and heavy loads.

Technical Context

This MOSFET employs NextPower Superjunction technology to minimize conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges from 1.05 V to 1.95 V at 25 °C, supporting reliable turn-on with 4.5 V logic-level drive while maintaining robust noise immunity.

The device integrates a low-inductance, high-current LFPAK package with a mounting base electrically connected to the drain, enabling direct thermal coupling to heatsinks. Its dynamic characteristics-including Q_GD = 3 nC, t_d(on) = 16.6 ns, and t_f = 10.7 ns-support high-frequency synchronous rectification and load switching up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input systems.
R_DS(on) @ V_GS = 10 V	3.3–3.9 mΩ @ T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current power OR-ing and sync rectifier designs.
R_DS(on) @ V_GS = 4.5 V	4.25–5.1 mΩ @ T_j = 25 °C - Ensures strong enhancement and low on-resistance with standard logic-level drivers.
Q_G(tot)	10.1 nC @ V_GS = 4.5 V - Reduces gate drive power and enables efficient operation with low-side gate drivers in high-frequency topologies.
I_D (continuous)	97 A @ T_mb = 25 °C - Supports high-current output stages in server VRMs and industrial DC/DC modules without parallel devices.
R_th(j-mb)	2.14 K/W - Allows direct mounting to PCB copper or heatsink, achieving >60 W power dissipation with minimal thermal rise.
V_GS(th)	1.05–1.95 V @ T_j = 25 °C - Guarantees turn-on with 3.3 V or 5 V logic, while avoiding spurious conduction due to noise.

Pinout & Package

PSMN3R7-25YLC uses the SOT669 (LFPAK; Power-SO8) plastic surface-mount package with 4 leads and an exposed mounting base electrically tied to the drain terminal. The package features low parasitic inductance and resistance, optimized for high-current, high-thermal-demand applications.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with RG = 1.7–3.4 Ω; designed for stable 4.5 V logic-level drive without external gate resistors in most cases.
Mounting base (mb)	Drain (D)	Exposed copper pad connected internally to drain; serves as primary thermal path and high-current drain connection.

Key Features

Feature	Design Value
NextPower Superjunction technology	Enables ultra-low Q_G, Q_GD, and Q_OSS - directly reduces switching losses and improves efficiency across load range.
Logic-level gate drive (4.5 V)	Guaranteed R_DS(on) ≤ 5.1 mΩ at V_GS = 4.5 V - eliminates need for gate boosters in 3.3 V/5 V control architectures.
LFPAK package (SOT669)	Thermal resistance R_th(j-mb) = 2.14 K/W - delivers >2× better thermal performance than standard SO-8 for same footprint.
175 °C junction rating	Qualified per industrial standards - supports operation in high-ambient environments like telecom rectifiers and industrial motor drives.
Low reverse recovery charge (Q_r = 14 nC)	Minimizes body diode losses during hard-commutation - critical for high-efficiency synchronous rectification in LLC and phase-shifted full-bridge converters.

Applications

DC-to-DC Converters	Server Power Supplies
Use Scenario: Primary-side switch in 48 V–12 V intermediate bus converters operating at 300–500 kHz. IC Role / Device Role / Timing Role: High-side N-channel MOSFET delivering 80 A output with synchronous rectification. Use Value: Ultra-low Q_G and R_DS(on) reduce total switching + conduction loss to <2.5 W, enabling >95% peak efficiency.	Use Scenario: 12 V output stage in multi-phase VRMs for AI accelerators and CPU/GPU power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck phases. Use Value: 3.9 mΩ R_DS(on) at 10 V and fast trr (23 ns) minimize conduction loss and reverse recovery energy, improving transient response.
Power OR-ing	Load Switching
Use Scenario: Redundant 12 V supply combining in enterprise storage enclosures with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back N-channel OR-ing FET controlling current direction and fault isolation. Use Value: Low V_GS(th) and tight distribution ensure precise turn-on timing; low R_DS(on) limits voltage drop to <50 mV at 60 A.	Use Scenario: Hot-swap controller output stage in 24 V industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-current load switch protecting downstream circuitry from inrush and short-circuit faults. Use Value: 387 A pulsed drain current (I_DM) and avalanche energy rating (24 mJ) enable robust fault handling without external crowbar circuits.

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V–12 V intermediate bus converters operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET delivering 80 A output with synchronous rectification.

Use Value: Ultra-low Q_G and R_DS(on) reduce total switching + conduction loss to <2.5 W, enabling >95% peak efficiency.

Use Scenario: 12 V output stage in multi-phase VRMs for AI accelerators and CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck phases.

Use Value: 3.9 mΩ R_DS(on) at 10 V and fast trr (23 ns) minimize conduction loss and reverse recovery energy, improving transient response.

Power OR-ing

Load Switching

Use Scenario: Redundant 12 V supply combining in enterprise storage enclosures with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back N-channel OR-ing FET controlling current direction and fault isolation.

Use Value: Low V_GS(th) and tight distribution ensure precise turn-on timing; low R_DS(on) limits voltage drop to <50 mV at 60 A.

Use Scenario: Hot-swap controller output stage in 24 V industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-current load switch protecting downstream circuitry from inrush and short-circuit faults.

Use Value: 387 A pulsed drain current (I_DM) and avalanche energy rating (24 mJ) enable robust fault handling without external crowbar circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	40 V V_DS, 3.6 mΩ R_DS(on) @ 10 V, TO-252 package, higher Q_G (14.5 nC)	Higher voltage margin but larger footprint and inferior thermal resistance (R_th(j-case) ≈ 3.5 K/W)	Preferred where 40 V rating is required and board space allows DPAK; less optimal for high-density, thermally constrained layouts.
Vishay SiR872DP	25 V V_DS, 3.8 mΩ R_DS(on) @ 10 V, PowerPAK SO-8, Q_G = 12.5 nC, R_th(j-c) = 2.5 K/W	Similar R_DS(on) and voltage, but higher gate charge and slightly worse thermal performance than LFPAK	Suitable for cost-sensitive designs where LFPAK assembly infrastructure is unavailable; requires careful layout to match thermal performance.

Compared with IPP036N04L and SiR872DP, PSMN3R7-25YLC offers the lowest combined gate charge and thermal resistance in a compact LFPAK footprint, making it optimal for high-current, high-frequency, thermally demanding applications such as server VRMs and telecom DC/DC where layout density and thermal headroom are critical.

Availability

PSMN3R7-25YLC is available at Aetrix Electronics and suitable for server power supplies, DC-to-DC converters, and industrial load switching requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN3R7-25YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, logic, and power management solutions for industrial, automotive, and communications markets.

The PSMN3R7-25YLC belongs to NXP's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-current switching in data center power, telecom infrastructure, and industrial automation systems.

FAQ

What is the maximum continuous drain current rating for PSMN3R7-25YLC?

The PSMN3R7-25YLC is rated for 97 A continuous drain current at T_mb = 25 °C with V_GS = 10 V. At elevated mounting base temperatures, this derates to 68 A at T_mb = 100 °C. These values assume proper PCB copper area and thermal management per the datasheet's Figure 1 and thermal characterization.

Does PSMN3R7-25YLC support 3.3 V logic-level gate drive?

PSMN3R7-25YLC is specified for reliable enhancement with 4.5 V gate drive, not 3.3 V. Its V_GS(th) minimum is 1.05 V, but R_DS(on) is only guaranteed at V_GS ≥ 4.5 V. At 3.3 V, conduction resistance rises significantly-use only with verified gate drive margin and thermal validation.

What is the thermal resistance from junction to mounting base for PSMN3R7-25YLC?

The PSMN3R7-25YLC has a typical thermal resistance R_th(j-mb) of 2.14 K/W, measured from junction to the exposed mounting base (drain pad). This value assumes proper soldering to a 100 mm² 2-oz copper pad and enables >60 W power dissipation with <130 °C junction rise above board temperature.

Is PSMN3R7-25YLC suitable for synchronous rectification?

Yes, PSMN3R7-25YLC is well-suited for synchronous rectification due to its low Q_G (10.1 nC @ 4.5 V), fast switching times (t_f = 10.7 ns), and low reverse recovery charge (Q_r = 14 nC). Its source-drain diode V_SD is 0.8–1.1 V at 20 A, minimizing body diode conduction loss during dead-time intervals.

What package type does PSMN3R7-25YLC use, and how is the mounting base connected?

PSMN3R7-25YLC uses the SOT669 (LFPAK; Power-SO8) package. Its mounting base (mb) is an exposed copper pad electrically connected to the drain terminal-serving as both the primary thermal path and high-current drain connection. This design eliminates the need for separate drain vias or thermal pads in many layouts.

PSMN3R7-25YLC,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 21.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1585 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 64W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN3R7-25YLC,115 FAQ

1.How can I place an order for PSMN3R7-25YLC,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R7-25YLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R7-25YLC,115 reliable?

The price and inventory of PSMN3R7-25YLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R7-25YLC,115 is usually 5 days.

3.What payment methods are accepted for PSMN3R7-25YLC,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R7-25YLC,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R7-25YLC,115?

PSMN3R7-25YLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R7-25YLC,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R7-25YLC,115?

For technical support, including PSMN3R7-25YLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R7-25YLC,115 requirements.

6.How does Aetrix verify that PSMN3R7-25YLC,115 is sourced from the original manufacturer or authorized distributors?

All PSMN3R7-25YLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R7-25YLC,115 meets industry standards.

7.What is the process for return or replacement of PSMN3R7-25YLC,115?

All PSMN3R7-25YLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R7-25YLC,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R7-25YLC,115 part is unused and in its original packaging.

Return procedure for PSMN3R7-25YLC,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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