Nexperia USA Inc. PSMN3R8-100BS,118

Overview

PSMN3R8-100BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 120 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in DC-DC converters, server power supplies, and motor control stages where low conduction loss and robust avalanche energy handling (537 mJ) are critical.

For engineers reviewing the PSMN3R8-100BS,118 datasheet, PSMN3R8-100BS,118 pinout, PSMN3R8-100BS,118 application, or PSMN3R8-100BS,118 equivalent, key selection criteria include its 3.9 mΩ on-resistance at 25 °C, 170 nC total gate charge, 0.22 K/W junction-to-mounting-base thermal resistance, and D2PAK mounting base connection to drain - all essential for thermal management and switching efficiency in high-power industrial and communications systems.

Technical Context

This MOSFET employs a planar silicon process optimized for standard-level gate drive (10 V), enabling direct compatibility with common PWM controllers without level-shifting. Its R_DS(on) exhibits strong temperature dependence - rising from 3.28 mΩ at 25 °C to 9 mΩ at 175 °C - requiring careful thermal derating in sustained high-current operation.

The device integrates an intrinsic body diode with 0.8–1.2 V forward voltage at 25 A and 75 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its unclamped avalanche rating of 537 mJ at T_j(init) = 25 °C confirms ruggedness under transient overvoltage conditions typical in inductive load switching.

Key Specifications

Pinout & Package

D2PAK (SOT404) package with isolated mounting base electrically connected to drain (pin 2). Requires soldering of mounting base to large copper area for thermal performance. Pin 2 is not externally accessible - internal connection only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with IRF3205PBF and STP110N10F7, PSMN3R8-100BS,118 delivers superior power density via D2PAK thermal interface, lowest R_DS(on) in its 100 V class, and highest verified avalanche energy - making it optimal for space-constrained, high-reliability industrial power stages where thermal and transient robustness are non-negotiable.

Availability

PSMN3R8-100BS,118 is available at Aetrix Electronics and suitable for server power supplies, DC-DC converters, and motor control systems requiring stable component supply across multi-year production cycles and industrial temperature operation.

Supply support for PSMN3R8-100BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's standard-level Power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power conversion, communications infrastructure, and domestic equipment - emphasizing thermal robustness, avalanche safety, and gate-drive simplicity.

FAQ

What is the maximum continuous drain current for PSMN3R8-100BS,118 at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 75 A, based on Figure 1 in the datasheet. This reflects thermal limitation of the D2PAK package - not electrical failure - and assumes adequate heatsinking. Operation above this requires verification against SOA curves in Figure 3.

Is the mounting base of PSMN3R8-100BS,118 electrically isolated from the drain?

No. The mounting base (mb) is internally connected to the drain (pin 2), as confirmed in Table 2 and Figure 18. This requires insulation between the heatsink and system ground unless the drain node is at ground potential. PCB layout must allocate sufficient creepage/clearance for 100 V isolation if heatsink is grounded.

Can PSMN3R8-100BS,118 be driven directly by a 3.3 V microcontroller GPIO?

No. With a typical V_GS(th) of 2–4 V and full enhancement requiring ≥10 V, a 3.3 V GPIO cannot achieve low R_DS(on). Driving at 3.3 V yields R_DS(on) > 25 mΩ - increasing conduction loss 6×. A dedicated gate driver or level shifter is mandatory for standard-level operation.

What is the significance of the "118" suffix in PSMN3R8-100BS,118?

The "118" is Nexperia's tape-and-reel packaging code indicating 800-unit reels in embossed carrier tape per IEC 60286-3. It does not affect electrical specifications or package dimensions - PSMN3R8-100BS and PSMN3R8-100BS,118 share identical die, pinout, and performance characteristics.