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NXP Semiconductors PSMN3R8-30LL,115

Name: PSMN3R8-30LL,115
Brand: NXP Semiconductors
SKU: PSMN3R8-30LL,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R8-30LL,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: 8-VDFN Exposed Pad

Datasheet:: PSMN3R8-30LL,115.pdf

Description:: MOSFET N-CH 30V 40A 8DFN

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Product details

Overview

PSMN3R8-30LL from NXP Semiconductors is a logic-level N-channel MOSFET in DFN3333-8 (SOT873-1) package, rated for 30 V V_DS, 40 A continuous drain current at T_mb = 25 °C, and 3.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It operates up to 150 °C junction temperature and is optimized for high-efficiency load switching and DC-to-DC converter primary-side switching.

For engineers reviewing the PSMN3R8-30LL datasheet, PSMN3R8-30LL pinout, PSMN3R8-30LL application, or PSMN3R8-30LL equivalent, this device delivers verified low R_DS(on) at 4.5 V gate drive, robust avalanche energy rating (109 mJ), and thermal resistance of 1.0–1.3 K/W from junction to mounting base - critical for compact, thermally constrained industrial power designs.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low conduction losses and fast switching with Q_G(tot) = 38 nC at 10 V and Q_GD = 5.3 nC, enabling efficient operation in synchronous buck and ORing configurations. Its logic-level gate threshold (V_GS(th) = 1.3–2.15 V typ.) ensures full enhancement with standard 3.3 V or 5 V controllers.

The DFN3333-8 package integrates an exposed drain-connected mounting base (mb) for direct PCB thermal coupling, supporting high-power density layouts without external heatsinks. The device's 150 °C qualification and -55 °C to 150 °C T_j range confirm suitability for harsh industrial environments where thermal stability is non-negotiable.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 24 V nominal bus systems with margin for transients and ripple
R_DS(on)	3.7 mΩ max at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 15 A, reducing thermal stress
I_D	40 A continuous at T_mb = 25 °C - sustains high-current loads in battery protection and ORing circuits
E_AS	109 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off events in relay drivers or motor control
Q_G(tot)	38 nC at V_GS = 10 V - balances switching speed and gate driver power requirements in 100–500 kHz converters
R_th(j-mb)	1.0–1.3 K/W - allows >50 W dissipation with ≤65 °C temperature rise above board, enabling compact thermal design
V_GS(th)	1.3–2.15 V typical - ensures reliable turn-on with 3.3 V microcontrollers or logic-level PWM generators

Pinout & Package

DFN3333-8 (SOT873-1) package: 3.3 mm × 3.3 mm × 1.0 mm body with exposed drain-connected mounting base for enhanced thermal transfer. No leads; soldered directly to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input with internal R_G = 1 Ω - minimizes ringing and simplifies gate driver layout
5, 6, 7, 8 + mb	Drain (D)	Four drain pins plus large exposed mounting base provide low-inductance, low-resistance path to PCB ground plane

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS = 4.5 V, compatible with 3.3 V/5 V controllers without level-shifting circuitry
Thermally enhanced DFN	Exposed drain pad reduces R_th(j-mb) to 1.0–1.3 K/W - enables higher power density than SO-8 equivalents
Low R_DS(on) at 4.5 V	4.5–5.8 mΩ max at V_GS = 4.5 V, T_j = 25 °C - maintains efficiency in 3.3 V gate-drive systems
Avalanche ruggedness	109 mJ E_AS - eliminates need for external snubbers in inductive load switching
High-temperature operation	Rated for continuous operation at T_j = 150 °C - supports sealed enclosures and high-ambient industrial environments

Applications

Battery Protection	DC-to-DC Converters
Use Scenario: Bidirectional overcurrent and short-circuit protection in 12–24 V Li-ion battery packs with integrated fuel gauging. IC Role / Device Role / Timing Role: High-side or low-side load switch controlling main power path; responds within microseconds to fault signals from protection ICs. Use Value: 3.7 mΩ R_DS(on) limits voltage drop and self-heating during sustained 20–30 A discharge, preserving pack capacity and thermal safety margin.	Use Scenario: Synchronous rectifier in 24 V input, 5–12 V output buck converters for telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–300 kHz with gate driven by dedicated sync controller. Use Value: Low Q_GD (5.3 nC) and fast switching (t_r = 67 ns, t_f = 18 ns) minimize dead-time losses and improve light-load efficiency.
Load Switching	Power ORing
Use Scenario: Hot-swap and inrush current limiting for redundant 24 V power rails in industrial PLC backplanes. IC Role / Device Role / Timing Role: Controlled high-side switch with soft-start via gate resistor network; handles 40 A steady-state current. Use Value: 40 A I_D rating and 150 °C T_j allow uninterrupted operation under full load even with limited airflow in dense chassis.	Use Scenario: Diode-replacement in dual-input 12 V ORing configuration for server PSUs with redundancy. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair acting as ideal diode with reverse-polarity blocking. Use Value: 0.85 V V_SD forward drop at 10 A (vs. ~0.4 V theoretical ideal diode) reduces conduction loss by >60% versus Schottky alternatives.

Battery Protection

DC-to-DC Converters

Use Scenario: Bidirectional overcurrent and short-circuit protection in 12–24 V Li-ion battery packs with integrated fuel gauging.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlling main power path; responds within microseconds to fault signals from protection ICs.

Use Value: 3.7 mΩ R_DS(on) limits voltage drop and self-heating during sustained 20–30 A discharge, preserving pack capacity and thermal safety margin.

Use Scenario: Synchronous rectifier in 24 V input, 5–12 V output buck converters for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–300 kHz with gate driven by dedicated sync controller.

Use Value: Low Q_GD (5.3 nC) and fast switching (t_r = 67 ns, t_f = 18 ns) minimize dead-time losses and improve light-load efficiency.

Load Switching

Power ORing

Use Scenario: Hot-swap and inrush current limiting for redundant 24 V power rails in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Controlled high-side switch with soft-start via gate resistor network; handles 40 A steady-state current.

Use Value: 40 A I_D rating and 150 °C T_j allow uninterrupted operation under full load even with limited airflow in dense chassis.

Use Scenario: Diode-replacement in dual-input 12 V ORing configuration for server PSUs with redundancy.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair acting as ideal diode with reverse-polarity blocking.

Use Value: 0.85 V V_SD forward drop at 10 A (vs. ~0.4 V theoretical ideal diode) reduces conduction loss by >60% versus Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 3.0 mΩ R_DS(on) @ 10 V, same DFN3333-8 package but lower V_GS(th) (1.0–2.0 V)	Slightly better conduction loss at high current; tighter V_GS(th) improves low-voltage turn-on consistency	Preferred when optimizing for <100 mW conduction loss at 20 A or using marginal 3.0 V gate drive
Vishay SiR872DP	30 V V_DS, 3.6 mΩ R_DS(on) @ 10 V, PowerPAK® 3.3×3.3 package with identical footprint and pinout	Same thermal performance (R_th(j-mb) ≈ 1.2 K/W); higher Q_G(tot) (44 nC) increases gate drive demand	Drop-in replacement for layout continuity; select when existing designs use Vishay's thermal pad layout guidelines

Compared with PSMN3R8-30LL, BSC014N04LS6 offers marginally lower R_DS(on) and broader gate threshold tolerance, while SiR872DP provides identical mechanical compatibility but requires stronger gate drivers due to higher total gate charge.

Availability

PSMN3R8-30LL is available at Aetrix Electronics and suitable for battery protection, DC-to-DC converters, and load switching applications requiring stable component supply across industrial, communications, and power supply equipment lifecycles.

Supply support for PSMN3R8-30LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The PSMN3R8-30LL belongs to NXP's TrenchMOS logic-level power MOSFET family, engineered for high-efficiency, space-constrained power management in industrial and communications infrastructure where thermal reliability and gate-drive simplicity are essential.

FAQ

What is the maximum continuous drain current for PSMN3R8-30LL at 100 °C mounting base temperature?

The PSMN3R8-30LL supports 40 A continuous drain current at T_mb = 25 °C, derating linearly to approximately 25 A at T_mb = 100 °C per Figure 2 in the datasheet. This derating ensures safe operation within its 150 °C junction limit and accounts for thermal resistance between mounting base and ambient.

Does PSMN3R8-30LL require a gate resistor for stable switching in a 200 kHz buck converter?

Yes - although PSMN3R8-30LL has low internal gate resistance (1 Ω), a 4.7 Ω external gate resistor is recommended per datasheet test conditions (Figure 14) to dampen ringing and control dV/dt during turn-on/turn-off. This value balances switching speed and EMI suppression for 200 kHz operation with standard gate drivers.

Can PSMN3R8-30LL be used in a 3.3 V gate-driven load switch without level shifting?

Yes - PSMN3R8-30LL is explicitly designed as a logic-level MOSFET with V_GS(th) as low as 1.3 V (typ.) and R_DS(on) = 4.5–5.8 mΩ at V_GS = 4.5 V. At 3.3 V gate drive, it achieves partial enhancement sufficient for moderate-current switching; for full 40 A capability, 4.5 V or higher is required.

What is the thermal resistance from junction to ambient (R_th(j-a)) for PSMN3R8-30LL on a standard 4-layer PCB?

The datasheet specifies R_th(j-a) = 53–60 K/W under defined test conditions: 40 mm × 40 mm × 70 μm copper pad at 20 °C ambient. On a typical 4-layer PCB with internal ground/power planes and 2 oz copper, actual R_th(j-a) will be 35–45 K/W - significantly lower due to improved heat spreading beyond the minimum test pad.

Is PSMN3R8-30LL qualified for automotive applications?

No - the PSMN3R8-30LL is not automotive-qualified. The datasheet explicitly states it is designed for industrial, communications, and power supply equipment. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond its 150 °C junction rating.

PSMN3R8-30LL,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2085 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN3333 (3.3x3.3)

PSMN3R8-30LL,115 FAQ

1.How can I place an order for PSMN3R8-30LL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R8-30LL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R8-30LL,115 reliable?

The price and inventory of PSMN3R8-30LL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R8-30LL,115 is usually 5 days.

3.What payment methods are accepted for PSMN3R8-30LL,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R8-30LL,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R8-30LL,115?

PSMN3R8-30LL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R8-30LL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R8-30LL,115?

For technical support, including PSMN3R8-30LL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R8-30LL,115 requirements.

6.How does Aetrix verify that PSMN3R8-30LL,115 is sourced from the original manufacturer or authorized distributors?

All PSMN3R8-30LL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R8-30LL,115 meets industry standards.

7.What is the process for return or replacement of PSMN3R8-30LL,115?

All PSMN3R8-30LL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R8-30LL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R8-30LL,115 part is unused and in its original packaging.

Return procedure for PSMN3R8-30LL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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