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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R9-25MLC,115

Name: PSMN3R9-25MLC,115
Brand: Nexperia USA Inc.
SKU: PSMN3R9-25MLC,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R9-25MLC,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN3R9-25MLC,115.pdf

Description:: MOSFET N-CH 25V 70A LFPAK33

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Product details

Overview

PSMN3R9-25MLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK33 (SOT1210) package, rated for 25 V V_DS, 4.15 mΩ R_DS(on) at V_GS = 10 V and 25 A, optimized for 4.5 V gate drive using NextPower Superjunction technology. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and buck regulators.

For engineers reviewing the PSMN3R9-25MLC datasheet, PSMN3R9-25MLC pinout, PSMN3R9-25MLC application, or PSMN3R9-25MLC equivalent, this device is selected for low-voltage, high-current switching where ultra-low Q_G (9.7 nC), Q_GD (2.3 nC), and thermal resistance (R_th(j-mb) = 1.95 K/W) directly impact system efficiency and thermal management in space-constrained industrial power stages.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction architecture to achieve ultra-low gate charge and on-resistance while maintaining robust avalanche ruggedness (E_AS = 34.5 mJ). Its 4.5 V logic-level gate threshold (V_GS(th) = 1.81 V typ) enables direct drive from 5 V or 3.3 V controllers without level shifting.

The LFPAK33 package integrates a thermally enhanced mounting base connected to the drain, enabling efficient heat transfer to PCB copper. The triple-source-pin configuration (Pins 1–3) reduces source inductance and improves switching stability in high-dI/dt applications like synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input rails with margin.
R_DS(on)	4.15 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 70 A continuous current under optimal thermal conditions.
Q_G(tot)	9.7 nC @ V_GS = 4.5 V - Reduces gate drive power and switching transition time, critical for >500 kHz DC-DC operation.
Q_GD	2.3 nC - Minimizes Miller-induced turn-off delay and improves noise immunity during hard-switching.
R_th(j-mb)	1.95 K/W - Junction-to-mounting-base thermal resistance enables >60 W power dissipation with moderate heatsinking on 2 oz copper.
I_D	70 A @ T_mb = 25 °C - Continuous drain current limited by package thermal capability, not silicon.
V_GS(th)	1.81 V typ - Ensures reliable turn-on with standard logic-level drivers; low temperature coefficient (−4.1 mV/K) maintains stability across −55 to 175 °C.

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount plastic package with exposed drain mounting base for superior thermal performance. Dimensions: 3.40 × 2.45 × 0.90 mm (L × W × H), with 4 signal leads and integrated thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 - S	Source	Three parallel source terminals reduce parasitic inductance and improve current sharing in high-frequency switching paths.
4 - G	Gate	Single gate input; low gate resistance (R_G = 1.8 Ω typ) supports fast, controlled turn-on/turn-off with minimal external gate resistor.
Mounting Base - D	Drain	Exposed copper drain pad soldered to PCB thermal plane; provides primary heat path and electrical connection to drain node.

Key Features

Feature	Design Value
NextPower Superjunction Technology	Enables 4.15 mΩ R_DS(on) at 25 V rating while maintaining low Q_G and high avalanche energy (34.5 mJ).
Optimized for 4.5 V Gate Drive	V_GS(th) = 1.81 V and low R_DS(on) at 4.5 V (4.85 mΩ) allow direct interface with microcontrollers and PWM controllers without gate drivers.
Ultra-Low Q_GD and Q_OSS	Q_GD = 2.3 nC and Q_OSS = 9.9 nC minimize switching losses and improve light-load efficiency in buck converters.
Triple-Source Pin Configuration	Reduces source loop inductance by >30% vs. standard SO-8, suppressing voltage spikes and improving EMI in high-dI/dt synchronous rectification.
Robust Avalanche Rating	Non-repetitive E_AS = 34.5 mJ at T_j = 25 °C ensures reliability during inductive load switching and fault transients.

Applications

DC-DC Converter Primary Switch

Synchronous Buck Regulator High-Side FET

Use Scenario: 12 V input to 3.3 V/20 A output in telecom power module.

IC Role / Device Role / Timing Role: High-side switching FET operating at 600 kHz with 4.5 V gate drive from controller IC.

Use Value: 4.15 mΩ R_DS(on) and 9.7 nC Q_G enable >95% peak efficiency and <15 ns rise/fall times, reducing switching losses by 22% vs. comparable SO-8 MOSFETs.

Use Scenario: Point-of-load regulator on server motherboard supplying GPU core voltage.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in dual-phase buck stage, driven by dedicated gate driver.

Use Value: Triple-source pins and 1.95 K/W R_th(j-mb) maintain T_j < 110 °C at 70 A peak, eliminating need for external heatsink in 12 mm² footprint.

Industrial Load Switch

Hot-Swap Controller Back-End FET

Use Scenario: 24 V motor control board requiring soft-start and overcurrent protection.

IC Role / Device Role / Timing Role: Low-side load switch controlled via microcontroller GPIO with current sensing.

Use Value: 1.81 V V_GS(th) ensures full enhancement at 3.3 V logic; 63 A I_S rating supports bidirectional current during braking regeneration.

Use Scenario: 48 V datacom line card with hot-swap insertion into live backplane.

IC Role / Device Role / Timing Role: Main pass FET in hot-swap controller IC reference design, handling inrush limiting and fault isolation.

Use Value: 390 A pulsed I_DM and 34.5 mJ avalanche energy withstand repeated 10 µs short-circuit events without failure during hot-plug sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	20 V V_DS, 3.8 mΩ R_DS(on) @ 4.5 V, PowerPAIR 3.3×3.3 package, higher C_iss (1720 pF)	Limited to ≤20 V systems; less avalanche ruggedness (no published E_AS)	Select when 20 V rating suffices and lower R_DS(on) at 4.5 V is prioritized over 25 V margin and avalanche capability.
DMTH3007LPSQ-13	30 V V_DS, 5.2 mΩ R_DS(on) @ 4.5 V, PowerDI5060 package, higher Q_G (13.5 nC)	Broadens voltage headroom but increases switching loss and gate drive demand	Select when 30 V rating is mandatory for transient tolerance and thermal derating is acceptable for same current density.

Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, PSMN3R9-25MLC uniquely balances 25 V rating, sub-5 mΩ on-resistance at 4.5 V, ultra-low Q_GD, and verified avalanche energy-making it optimal for industrial 24 V DC-DC and load-switch designs demanding both efficiency and ruggedness.

Availability

PSMN3R9-25MLC is available at Aetrix Electronics and suitable for DC-DC converters, synchronous buck regulators, and industrial load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for PSMN3R9-25MLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PSMN3R9-25MLC belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in industrial, communications, and computing equipment where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PSMN3R9-25MLC at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 10 V, the maximum continuous drain current is 69 A per the Limiting Values table. This reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures, not silicon current limit.

Does PSMN3R9-25MLC have an integrated body diode, and what is its reverse recovery performance?

Yes, it features a monolithic source-drain body diode with V_SD = 0.82 V at I_S = 25 A and T_j = 25 °C. Reverse recovery time t_rr is 17.6 ns with Q_r = 9.2 nC, enabling efficient synchronous rectification in high-frequency buck converters without external Schottky diodes.

Can PSMN3R9-25MLC be used in avalanche mode, and what is its single-pulse energy rating?

Yes, it is specified for non-repetitive unclamped inductive switching. The single-pulse avalanche energy E_AS is 34.5 mJ at T_j(init) = 25 °C, I_D = 70 A, V_sup ≤ 25 V, and R_GS = 50 Ω, as validated in Figure 3 of the datasheet.

What is the gate threshold voltage variation over temperature, and how does it affect system stability?

V_GS(th) has a negative temperature coefficient of −4.1 mV/K. As junction temperature rises from 25 °C to 150 °C, V_GS(th) decreases by ~515 mV, ensuring consistent turn-on behavior and preventing thermal runaway in parallel configurations or high-temperature environments.

PSMN3R9-25MLC,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1524 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN3R9-25MLC,115 FAQ

1.How can I place an order for PSMN3R9-25MLC,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R9-25MLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R9-25MLC,115 reliable?

The price and inventory of PSMN3R9-25MLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R9-25MLC,115 is usually 5 days.

3.What payment methods are accepted for PSMN3R9-25MLC,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R9-25MLC,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R9-25MLC,115?

PSMN3R9-25MLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R9-25MLC,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R9-25MLC,115?

For technical support, including PSMN3R9-25MLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R9-25MLC,115 requirements.

6.How does Aetrix verify that PSMN3R9-25MLC,115 is sourced from the original manufacturer or authorized distributors?

All PSMN3R9-25MLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R9-25MLC,115 meets industry standards.

7.What is the process for return or replacement of PSMN3R9-25MLC,115?

All PSMN3R9-25MLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R9-25MLC,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R9-25MLC,115 part is unused and in its original packaging.

Return procedure for PSMN3R9-25MLC,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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