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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R9-60PSQ

Name: PSMN3R9-60PSQ
Brand: Nexperia USA Inc.
SKU: PSMN3R9-60PSQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R9-60PSQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN3R9-60PSQ.pdf

Description:: MOSFET N-CH 60V 130A TO220AB

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Product details

Overview

PSMN3R9-60PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, optimized for battery-powered power tools. It delivers 60 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V and I_D = 25 A, 263 W P_tot at T_mb = 25 °C, and 283 mJ unclamped avalanche energy - enabling robust motor control and high-current load switching in portable industrial equipment.

For engineers reviewing the PSMN3R9-60PS datasheet, PSMN3R9-60PS pinout, PSMN3R9-60PS application, or PSMN3R9-60PS equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, SOT78 thermal performance (R_th(j-mb) = 0.49 K/W), and avalanche ruggedness for inductive load handling in cordless tool H-bridges and UPS inverters.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low conduction loss while maintaining stable threshold voltage (V_GS(th) = 2.4–4.5 V) across -55 °C to 175 °C junction temperature. Its gate charge profile (Q_G(tot) = 103 nC, Q_GD = 33 nC) supports efficient switching in hard-switched DC-DC and motor drive stages up to ~100 kHz.

The device features an integrated source-drain diode with 39 ns reverse recovery time and 51 nC recovered charge, enabling synchronous rectification or freewheeling operation. Mounting base (pin 4) is internally connected to drain, requiring insulated heatsink mounting for floating-source topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V battery systems.
R_DS(on)	3.9 mΩ max at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.2 W conduction loss at 20 A continuous current.
I_D (continuous)	130 A at T_mb = 25 °C - Limited by package thermal capacity; derates to 127 A at T_mb = 100 °C.
E_AS	283 mJ - Non-repetitive avalanche energy rating; supports reliable operation during inductive turn-off transients in motor drives.
R_th(j-mb)	0.49 K/W typ - Junction-to-mounting-base thermal resistance enables direct heatsink coupling for high-power dissipation.
Q_G(tot)	103 nC - Total gate charge determines driver strength requirement; compatible with standard 1 A peak gate drivers.
V_GS(th)	2.4–4.5 V - Standard-level gate threshold allows direct drive from 5 V or 3.3 V logic with margin against noise-induced turn-on.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (pin 4), 3 leads, and 1 mounting hole. Mounting base is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires ≥10 V for full enhancement; gate leakage <100 nA ensures low standby power.
2	Drain (D)	Main current-carrying terminal; internally bonded to mounting base (pin 4); must be isolated from heatsink unless system ground reference permits.
3	Source (S)	Power return path; forms common reference for gate drive; source-drain diode enables freewheeling in half-bridge configurations.
4	Mounting Base (mb)	Thermal and electrical connection to drain; provides low-inductance, low-resistance heat path to external heatsink.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	3.9 mΩ max enables high-efficiency operation without requiring gate boosters or level shifters in 5–12 V control systems.
TrenchMOS process	Delivers optimized trade-off between switching speed (t_r = 41.4 ns, t_f = 45 ns) and conduction loss for portable power applications.
Avalanche-rated design	283 mJ E_AS supports reliable operation under inductive load switching without external snubbers in power tool motor controllers.
Robust thermal interface	0.49 K/W R_th(j-mb) allows >200 W dissipation with modest heatsinking - critical for intermittent high-torque tool operation.
Standard-level gate	V_GS(th) range (2.4–4.5 V) ensures compatibility with microcontroller GPIOs and avoids need for dedicated gate drivers in cost-sensitive designs.

Applications

Battery-Powered Power Tools

Motor Control in Cordless Drills

Use Scenario: High-current H-bridge in 18–40 V cordless drills and impact drivers, switching under load during stall and start-up conditions.

IC Role / Device Role / Timing Role: Main power switch in half-bridge or full-bridge topology; handles bidirectional motor current up to 130 A peak.

Use Value: Low R_DS(on) minimizes heat generation during sustained torque delivery; avalanche rating prevents failure during abrupt motor stop or jam events.

Use Scenario: PWM-driven brushed DC motor control in compact handheld tools with space-constrained PCB layouts.

IC Role / Device Role / Timing Role: Low-side or high-side switch in discrete motor driver stage; operates at 10–25 kHz PWM frequency.

Use Value: Fast switching (t_r/t_f < 50 ns) reduces transition losses; standard gate drive simplifies integration with MCU-based control firmware.

Uninterruptible Power Supplies (UPS)

High-Current Load Switching

Use Scenario: Inverter output stage in 24–48 V offline UPS systems delivering clean sine-wave or modified-sine output to sensitive loads.

IC Role / Device Role / Timing Role: Output switching element in full-bridge inverter; conducts high-frequency AC current with low conduction loss.

Use Value: 263 W P_tot and low thermal resistance support high-power density design; integrated body diode enables synchronous rectification in bidirectional topologies.

Use Scenario: Main battery disconnect switch in industrial portable equipment requiring >100 A hot-swap capability and fault protection.

IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlled via microcontroller GPIO; used for system power sequencing and overcurrent isolation.

Use Value: 130 A continuous rating and 705 A pulsed current capability ensure reliability during inrush and short-circuit events; robust construction withstands repeated mechanical shock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V, but higher Q_G = 131 nC and lower avalanche energy (190 mJ).	Limited suitability for high-reliability power tool motor control due to reduced avalanche margin.	Acceptable where gate drive strength is sufficient and inductive stress is low; not recommended for high-torque stall conditions.
STP130NF55	R_DS(on) = 3.8 mΩ @ 10 V, but higher R_th(j-mb) = 0.75 K/W and no published E_AS rating.	Lower thermal efficiency and unverified avalanche ruggedness limit use in thermally constrained portable tools.	Preferable only when footprint compatibility with ST's TO-220AB variant is required; verify thermal margin in final layout.

Compared with IRF1404PBF and STP130NF55, PSMN3R9-60PS offers superior avalanche energy (283 mJ vs ≤190 mJ), lower thermal resistance (0.49 K/W vs ≥0.75 K/W), and tighter R_DS(on) distribution - making it the preferred choice for thermally demanding, inductive-load applications like cordless power tools and UPS inverters.

Availability

PSMN3R9-60PS is available at Aetrix Electronics and suitable for battery-powered tools, uninterruptible power supplies, and high-current load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN3R9-60PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness operation in portable battery-powered equipment - especially power tools, UPS systems, and industrial motor controllers.

FAQ

Is PSMN3R9-60PS suitable for synchronous rectification?

Yes - its integrated source-drain diode has 39 ns reverse recovery time and 51 nC recovered charge, enabling efficient synchronous rectification in DC-DC converters up to ~200 kHz. However, external Schottky diodes may still be preferred in ultra-low-loss designs due to lower forward voltage.

What is the maximum allowable gate-source voltage?

The absolute maximum V_GS is ±20 V per datasheet limiting values. Operation above ±15 V risks permanent gate oxide damage. For reliable long-term use, keep V_GS within 0–12 V in standard-level drive configurations, with transient spikes clamped below ±15 V.

Can PSMN3R9-60PS be mounted directly to a non-isolated heatsink?

No - the mounting base (pin 4) is electrically connected to the drain terminal. Direct mounting to a grounded heatsink creates a short circuit unless the drain node is at system ground potential. Use electrically isolating thermal pads or mica washers when heatsinking in floating or high-side configurations.

How does R_DS(on) change with temperature?

R_DS(on) increases with junction temperature: typical value rises from 2.94 mΩ at 25 °C to 8.5 mΩ at 175 °C. This positive temperature coefficient improves current sharing in paralleled devices and provides inherent thermal stability during overload conditions.

PSMN3R9-60PSQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 263W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN3R9-60PSQ FAQ

1.How can I place an order for PSMN3R9-60PSQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R9-60PSQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R9-60PSQ reliable?

The price and inventory of PSMN3R9-60PSQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R9-60PSQ is usually 5 days.

3.What payment methods are accepted for PSMN3R9-60PSQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R9-60PSQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R9-60PSQ?

PSMN3R9-60PSQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R9-60PSQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R9-60PSQ?

For technical support, including PSMN3R9-60PSQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R9-60PSQ requirements.

6.How does Aetrix verify that PSMN3R9-60PSQ is sourced from the original manufacturer or authorized distributors?

All PSMN3R9-60PSQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R9-60PSQ meets industry standards.

7.What is the process for return or replacement of PSMN3R9-60PSQ?

All PSMN3R9-60PSQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R9-60PSQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R9-60PSQ part is unused and in its original packaging.

Return procedure for PSMN3R9-60PSQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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