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NXP Semiconductors PSMN3R9-60XSQ
- Part No.:
- PSMN3R9-60XSQ
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PSMN3R9-60XSQ.pdf
- Description:
- MOSFET N-CH 60V 75A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:2,255
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Product details
Overview
PSMN3R9-60XS from Nexperia is a standard-level N-channel power MOSFET in TO-220F (SOT186A) package, rated for 60 V drain-source voltage, 4.0 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 75 A continuous drain current at Tmb = 25 °C and supports isolated heatsink mounting for high-reliability industrial power conversion.
For engineers reviewing the PSMN3R9-60XS datasheet, PSMN3R9-60XS pinout, PSMN3R9-60XS application, or PSMN3R9-60XS equivalent, key selection criteria include its 2.5 K/W junction-to-mounting-base thermal resistance, 478 mJ unclamped avalanche energy rating, and compatibility with standard 10 V gate drive in server PSUs and motor control circuits.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low conduction losses and robust switching performance. Its isolated TO-220F package enables direct heatsink mounting without electrical isolation hardware, while the 3.25–4.0 mΩ RDS(on) range ensures high efficiency in DC-DC and synchronous rectification topologies.
The device features a gate threshold voltage of 2.4–4.0 V (typ. 3.0 V), total gate charge of 103 nC, and fast switching times (td(on) = 30.6 ns, tf = 64.4 ns), supporting high-frequency operation up to several hundred kHz in hard-switched applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and industrial AC-DC front-ends. |
| RDS(on) | 3.25–4.0 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current synchronous rectifiers. |
| ID (continuous) | 75 A @ Tmb = 25 °C - Limited by TO-220F package thermal capability; derates to zero at Tmb ≈ 200 °C. |
| EAS | 478 mJ - Unclamped avalanche energy rating confirms ruggedness in inductive switching and fault conditions. |
| Rth(j-mb) | 2.5–2.73 K/W - Low thermal resistance enables efficient heat transfer to external heatsink without thermal interface pads. |
| VGS(th) | 2.4–4.0 V - Standard-level gate drive compatibility eliminates need for level shifters in 5–15 V control circuits. |
| QG(tot) | 103 nC - Determines gate driver power requirement and switching loss in high-frequency designs. |
Pinout & Package
TO-220F (SOT186A) plastic single-ended package with isolated mounting base, 1 mounting hole, and 3 leads. Electrically isolated heatsink interface allows direct mechanical attachment without insulating hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤20 V absolute max gate-source voltage; 103 nC total gate charge defines driver sizing. |
| 2 (D) | Drain | Main high-side current path; connected to mounting base via internal isolation; rated for 60 V and 75 A continuous. |
| 3 (S) | Source | Reference node for gate drive and current sensing; forms return path for load current and body diode conduction. |
| mb | Mounting base | Electrically isolated metal surface; provides thermal path to heatsink while maintaining >2500 VRMS isolation from drain. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220F package | 2500 VRMS isolation voltage between mounting base and drain enables safe, simplified heatsinking in high-voltage systems. |
| Low RDS(on) | 3.25 mΩ typical value reduces conduction losses by >30% vs. comparable 60 V MOSFETs, improving efficiency in 48 V server PSUs. |
| Avalanche ruggedness | 478 mJ non-repetitive energy rating allows reliable operation under inductive load switching and transient overvoltage events. |
| 175 °C junction rating | Extended temperature qualification supports operation in sealed enclosures and high-ambient industrial environments without derating. |
| Standard-level gate drive | 3.0 V typical VGS(th) ensures full enhancement with common 5 V or 10 V controllers, eliminating need for gate drivers in many applications. |
Applications
| AC-to-DC Power Supplies | Server Power Supplies |
|---|---|
Use Scenario: Primary-side switching in offline flyback or LLC resonant converters for telecom and industrial SMPS. IC Role / Device Role / Timing Role: High-voltage N-channel switch handling 60 V bus with low RDS(on) to minimize conduction loss during duty cycle. Use Value: 4.0 mΩ RDS(on) reduces I²R loss by ~40% vs. 6.5 mΩ alternatives at 40 A, directly improving full-load efficiency by 0.8–1.2%. |
Use Scenario: Secondary-side synchronous rectifier in 12 V/48 V intermediate bus converters for datacenter servers. IC Role / Device Role / Timing Role: Low-VDS MOSFET replacing Schottky diodes to reduce forward voltage drop and improve light-load efficiency. Use Value: 0.76 V typical VSD and 478 mJ avalanche rating ensure reliable reverse recovery and fault tolerance in high-current, high-dV/dt environments. |
| Motor Control | Synchronous Rectification |
Use Scenario: Half-bridge high-side switch in BLDC motor drives for HVAC fans and industrial pumps. IC Role / Device Role / Timing Role: N-channel power switch controlled via bootstrap gate driver; operates at 20–50 kHz PWM frequency. Use Value: 103 nC QG(tot) and 64.4 ns fall time enable clean turn-off with minimal shoot-through risk in compact half-bridge layouts. |
Use Scenario: Output rectification in isolated DC-DC modules for telecom and networking equipment. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET driven by transformer-coupled or active timing signals to replace diode-based rectification. Use Value: 3.25 mΩ RDS(on) cuts conduction loss to <0.5 W at 30 A, enabling >95% peak efficiency in 12 V output converters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF70 | 70 V rating, 12.5 mΩ RDS(on), TO-220 package (non-isolated); higher RDS(on) and no mounting-base isolation. | Requires external isolation hardware for heatsink mounting; less suitable for space-constrained industrial PSUs. | Choose when higher voltage margin is needed and isolation is implemented externally. |
| IRFZ44NPBF | 55 V rating, 28 mΩ RDS(on), TO-220 (non-isolated); significantly higher on-resistance and lower avalanche rating (220 mJ). | Limited to lower-current (<30 A) applications; not recommended for 48 V server rails or high-temperature motor drives. | Choose only for cost-sensitive, low-power designs where 60 V rating and 4 mΩ performance are not required. |
Compared with STP75NF70 and IRFZ44NPBF, PSMN3R9-60XS offers superior thermal performance (2.5 K/W vs. ≥3.5 K/W), 3× higher avalanche energy, and integrated isolation-enabling smaller heatsinks, fewer BOM components, and higher reliability in 48 V industrial power stages.
Availability
PSMN3R9-60XS is available at Aetrix Electronics and suitable for AC-to-DC power supplies, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for PSMN3R9-60XS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, consumer, and wearable markets.
The PSMN3R9-60XS belongs to Nexperia's TrenchMOS standard-level PowerMOS family, engineered for high-efficiency, high-reliability power switching in industrial and communications infrastructure where thermal robustness and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for PSMN3R9-60XS?
The PSMN3R9-60XS supports 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C, as specified in the datasheet's Quick Reference Data table. This rating is package-limited and decreases linearly with rising Tmb, reaching zero at approximately 200 °C per Figure 1. At Tmb = 100 °C, the rated current drops to ~56 A.
Does PSMN3R9-60XS have an electrically isolated mounting base?
Yes, the PSMN3R9-60XS uses the TO-220F (SOT186A) package with an electrically isolated mounting base rated for 2500 VRMS isolation between the base and drain terminal. This eliminates the need for insulating pads or washers when mounting to a heatsink, simplifying thermal design and improving long-term reliability in high-voltage applications.
What is the typical gate threshold voltage (VGS(th)) of PSMN3R9-60XS?
The PSMN3R9-60XS has a gate-source threshold voltage (VGS(th)) ranging from 2.4 V to 4.0 V, with a typical value of 3.0 V at Tj = 25 °C and ID = 1 mA. This standard-level threshold ensures full enhancement with common 5 V or 10 V gate drivers, avoiding the complexity of negative-bias or level-shifted drive circuits required by logic-level devices.
How does the avalanche ruggedness of PSMN3R9-60XS compare to similar 60 V MOSFETs?
The PSMN3R9-60XS delivers 478 mJ of non-repetitive drain-source avalanche energy (EAS) under standardized test conditions (VGS = 10 V, ID = 75 A, Vsup ≤ 60 V). This exceeds typical values for competing 60 V MOSFETs (often 200–350 mJ), confirming superior robustness against inductive switching transients and short-circuit events in motor drives and SMPS.
Can PSMN3R9-60XS be used in synchronous rectification applications?
Yes, the PSMN3R9-60XS is explicitly listed in its datasheet Applications section for synchronous rectification. Its low 3.25–4.0 mΩ RDS(on), fast 64.4 ns fall time, and 0.76 V typical source-drain diode forward voltage make it well-suited for replacing Schottky diodes in 12 V and 48 V DC-DC outputs, delivering measurable efficiency gains across load ranges.
PSMN3R9-60XSQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 103 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5494 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PSMN3R9-60XSQ FAQ
1.How can I place an order for PSMN3R9-60XSQ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN3R9-60XSQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN3R9-60XSQ reliable?
The price and inventory of PSMN3R9-60XSQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R9-60XSQ is usually 5 days.
3.What payment methods are accepted for PSMN3R9-60XSQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R9-60XSQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN3R9-60XSQ?
PSMN3R9-60XSQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN3R9-60XSQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN3R9-60XSQ?
For technical support, including PSMN3R9-60XSQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R9-60XSQ requirements.
6.How does Aetrix verify that PSMN3R9-60XSQ is sourced from the original manufacturer or authorized distributors?
All PSMN3R9-60XSQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R9-60XSQ meets industry standards.
7.What is the process for return or replacement of PSMN3R9-60XSQ?
All PSMN3R9-60XSQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R9-60XSQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN3R9-60XSQ part is unused and in its original packaging.
Return procedure for PSMN3R9-60XSQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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