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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R0-40YS,115

Name: PSMN4R0-40YS,115
Brand: Nexperia USA Inc.
SKU: PSMN4R0-40YS,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R0-40YS,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN4R0-40YS,115.pdf

Description:: MOSFET N-CH 40V 100A LFPAK56

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Product details

Overview

PSMN4R0-40YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 40 V V_DS, 4.2 mΩ R_DS(on) at T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature - deployed in high-current load switching and server power supply rails.

For engineers reviewing the PSMN4R0-40YS datasheet, PSMN4R0-40YS pinout, PSMN4R0-40YS application, or PSMN4R0-40YS equivalent, this device is selected for high-efficiency DC-DC conversion, lithium-ion battery protection circuits, and thermally demanding motor control stages where low conduction loss and robust avalanche energy (77 mJ) are critical.

Technical Context

This MOSFET uses Nexperia's Advanced TrenchMOS technology to achieve low gate charge (Q_G(tot) = 38 nC) and low R_DS(on) while maintaining stable threshold voltage (V_GS(th) = 2–4 V at 25 °C, 1–4.6 V across –55 to 175 °C). Its LFPAK package enables direct mounting-base thermal coupling with R_th(j-mb) as low as 0.54 K/W.

The device features an integrated source-drain diode with V_SD = 0.83–1.2 V at I_S = 25 A and fast reverse recovery (t_rr = 42 ns, Q_r = 45 nC), supporting synchronous rectification and bidirectional current handling in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 36 V nominal systems and 48 V industrial bus applications.
R_DS(on)	4.2 mΩ typical at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <1 W conduction loss at 50 A, critical for high-current load switches.
I_D (continuous)	100 A at T_mb = 25 °C - supports high-power density designs without forced air cooling when mounted on copper heatsink.
Q_G(tot)	38 nC total gate charge - reduces driver power demand and switching losses in 100–500 kHz SMPS topologies.
E_AS	77 mJ non-repetitive avalanche energy - sustains unclamped inductive turn-off events in motor drive and relay snubbing circuits.
R_th(j-mb)	0.54 K/W typical thermal resistance from junction to mounting base - allows >80 W dissipation with ΔT = 43 °C rise above board temperature.
t_rr	42 ns reverse recovery time - minimizes commutation loss and EMI in synchronous buck converters operating above 200 kHz.

Pinout & Package

PSMN4R0-40YS is housed in the LFPAK (SOT669) plastic surface-mount package - a 4-lead single-ended power package with exposed drain pad for enhanced thermal and electrical performance. The package features a large copper mounting base and optimized internal wirebonding for high-current reliability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with 0.62 Ω internal AC gate resistance - simplifies external gate resistor selection for controlled turn-on/turn-off.
Drain (mb)	Drain (D)	Exposed metal mounting base serves as primary drain connection - provides low-inductance, high-current path and direct thermal conduction to PCB copper.

Key Features

Feature	Design Value
Advanced TrenchMOS architecture	Delivers 4.2 mΩ R_DS(on) and 38 nC Q_G(tot) simultaneously - enabling high efficiency in space-constrained 48 V intermediate bus converters.
LFPAK thermal design	0.54 K/W R_th(j-mb) enables 100 A operation with minimal heatsinking - eliminates need for discrete thermal interface materials in server VRMs.
175 °C junction rating	Supports operation in sealed industrial enclosures or high-ambient environments without derating - extends lifetime in fanless motor drives.
Integrated source-drain diode	V_SD = 0.83 V at 25 A and t_rr = 42 ns - permits use as freewheeling element in half-bridge configurations without external Schottky.

Applications

DC-DC Converters

Lithium-ion Battery Protection

Use Scenario: Primary-side switch in 48 V-to-12 V synchronous buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlling power delivery with 100 A peak current capability and 40 V blocking.

Use Value: 4.2 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable SO-8 devices, improving full-load efficiency to >95.2%.

Use Scenario: Charge/discharge path switch in 3S–4S Li-ion battery packs for power tools and e-bikes.

IC Role / Device Role / Timing Role: Bidirectional load switch managing up to 80 A continuous current with integrated body diode for reverse-current blocking.

Use Value: 77 mJ avalanche energy withstands inductive kickback during hot-plug events, eliminating need for external TVS clamping.

Server Power Supplies

Motor Control

Use Scenario: 48 V intermediate bus switch feeding multiple point-of-load (POL) regulators in AI accelerator servers.

IC Role / Device Role / Timing Role: High-current distribution switch with fast 12 ns fall time and low 266 pF Crss for clean turn-off under heavy capacitive loads.

Use Value: LFPAK's low-inductance source configuration suppresses voltage overshoot during 100 A step-load transients, reducing output capacitor count by 30%.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for industrial automation actuators.

IC Role / Device Role / Timing Role: PWM-controlled power stage delivering 60 A RMS current with 175 °C thermal rating for continuous duty cycle operation.

Use Value: 0.54 K/W R_th(j-mb) maintains T_j < 135 °C at full load without heatsink - enabling compact, sealed motor driver modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	SO-8 package, 4.5 mΩ R_DS(on), 90 A I_D, no LFPAK thermal base - higher R_th(j-c) (1.2 K/W).	Lower current density; unsuitable for >70 A continuous without active cooling.	Prefer PSMN4R0-40YS where board space and thermal headroom are constrained.
DMTH4007LPSQ-13	LFPAK56 package, 3.8 mΩ R_DS(on), 120 A I_D, automotive AEC-Q101 qualified - higher cost and qualification overhead.	Overqualified for industrial/commercial use; adds unnecessary compliance burden.	Choose PSMN4R0-40YS for cost-sensitive, non-automotive 40 V high-current switching.

Compared with IRF7470PBF, PSMN4R0-40YS delivers 22% lower thermal resistance and 11% lower R_DS(on) in identical footprint; versus DMTH4007LPSQ-13, it offers identical LFPAK benefits at 35% lower unit cost without automotive-grade overhead.

Availability

PSMN4R0-40YS is available at Aetrix Electronics and suitable for server power supplies, lithium-ion battery protection circuits, and industrial motor control systems requiring stable component supply and long-term production continuity.

Supply support for PSMN4R0-40YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions - serving industrial, computing, and communications markets with scalable manufacturing and rigorous quality systems.

PSMN4R0-40YS belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for high-current, high-efficiency switching in cost-sensitive industrial and infrastructure power applications - not automotive or high-reliability mil/aero.

FAQ

What is the maximum continuous drain current for PSMN4R0-40YS at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 83 A per the limiting values table - verified under V_GS = 10 V conditions and referenced in Figure 1 of the datasheet. This reflects thermal equilibrium with standard 2 oz copper PCB land patterns.

Does PSMN4R0-40YS have avalanche capability, and how is it specified?

Yes - it is rated for 77 mJ non-repetitive drain-source avalanche energy (E_AS) under defined test conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 100 A, V_sup ≤40 V, unclamped, R_GS = 50 Ω. This value is measured and guaranteed per JEDEC JESD24-11.

Can PSMN4R0-40YS be used in synchronous rectification topologies?

Yes - its integrated source-drain diode has V_SD = 0.83 V at 25 A and t_rr = 42 ns, enabling efficient freewheeling in synchronous buck converters. However, external synchronous drivers are required since it lacks integrated gate drive logic or bootstrap circuitry.

What is the gate threshold voltage range across temperature for PSMN4R0-40YS?

V_GS(th) ranges from 1 V at T_j = 175 °C to 4.6 V at T_j = –55 °C, with 2–4 V typical at 25 °C (ID = 1 mA, V_DS = V_GS). This wide span requires gate drive designs that ensure full enhancement across the full –55 to +175 °C operating range.

PSMN4R0-40YS,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN4R0-40YS,115 FAQ

1.How can I place an order for PSMN4R0-40YS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R0-40YS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R0-40YS,115 reliable?

The price and inventory of PSMN4R0-40YS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R0-40YS,115 is usually 5 days.

3.What payment methods are accepted for PSMN4R0-40YS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R0-40YS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R0-40YS,115?

PSMN4R0-40YS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R0-40YS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R0-40YS,115?

For technical support, including PSMN4R0-40YS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R0-40YS,115 requirements.

6.How does Aetrix verify that PSMN4R0-40YS,115 is sourced from the original manufacturer or authorized distributors?

All PSMN4R0-40YS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R0-40YS,115 meets industry standards.

7.What is the process for return or replacement of PSMN4R0-40YS,115?

All PSMN4R0-40YS,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R0-40YS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R0-40YS,115 part is unused and in its original packaging.

Return procedure for PSMN4R0-40YS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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