Nexperia USA Inc. PSMN4R1-30YLC,115

Overview

PSMN4R1-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, designed for high-efficiency power switching at 4.5 V gate drive. It delivers 4.35 mΩ R_DS(on) at V_GS = 10 V / I_D = 20 A / T_j = 25 °C, supports 92 A continuous drain current at T_mb = 25 °C, and operates up to 175 °C junction temperature - enabling use in server power supplies, DC-DC converters, and power OR-ing circuits.

For engineers reviewing the PSMN4R1-30YLC datasheet, PSMN4R1-30YLC pinout, PSMN4R1-30YLC application, or PSMN4R1-30YLC equivalent, key selection criteria include its 30 V V_DS, ultra-low Q_G (11 nC @ 4.5 V), 2.05 K/W R_th(j-mb), NextPower Superjunction architecture, and LFPAK's low-inductance source connection - all critical for high-frequency synchronous rectification and load-switching reliability.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction technology optimized for 4.5 V gate drive, delivering ultra-low gate charge (Q_G(tot) = 11 nC, Q_GD = 3.5 nC) and minimized output charge (Q_OSS = 8 nC), directly reducing switching losses in hard-switched and synchronous rectifier topologies. Its R_DS(on) remains stable across temperature, with only 2.2× increase from 4.35 mΩ at 25 °C to 7.25 mΩ at 150 °C under 10 V drive.

The LFPAK package integrates a thermally enhanced mounting base connected to the drain, enabling direct PCB copper pour attachment for efficient heat extraction. The triple-source-pin configuration (Pins 1–3) minimizes source inductance, while the gate terminal (Pin 4) is isolated from high-dI/dt paths - supporting clean turn-on/turn-off waveforms in high-speed power stages.

Key Specifications

Pinout & Package

LFPAK (SOT669) is a plastic single-ended surface-mounted package with exposed drain mounting base, optimized for high-power density and thermal performance. Its compact 5.0 × 3.3 mm footprint and 1.3 mm height support dense PCB layouts while enabling direct thermal interface to copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPP040N04L and SiR872DP, PSMN4R1-30YLC uniquely balances ultra-low R_DS(on), industry-leading Q_G/Q_GD, and 175 °C qualification - making it the optimal choice for thermally constrained, high-reliability industrial and server power designs requiring both efficiency and longevity.

Availability

PSMN4R1-30YLC is available at Aetrix Electronics and suitable for server power supplies, DC-to-DC converters, and industrial load-switching applications requiring stable component supply, long-lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for PSMN4R1-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and computing markets.

This device belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained and thermally demanding applications.

FAQ

What is the maximum continuous drain current for PSMN4R1-30YLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is rated at 65 A per the datasheet's Fig. 1 derating curve. This reflects thermal limitation rather than electrical saturation, and assumes proper PCB copper area (≥ 100 cm²) under the mounting base for effective heat transfer.

Does PSMN4R1-30YLC support avalanche energy handling, and what is its rated value?

Yes - it is rated for non-repetitive drain-source avalanche energy E_DS(AL)S = 21 mJ under specified conditions (V_GS = 10 V, T_j(init) = 25 °C, I_D = 92 A, V_sup ≤ 30 V, R_GS = 50 Ω). This capability supports robustness against inductive switching transients in motor drives and relay drivers.

How does the LFPAK package compare thermally to standard SO-8 for this MOSFET?

LFPAK (SOT669) achieves R_th(j-mb) = 2.05 K/W, nearly 3× better than typical SO-8 packages (~6 K/W). The exposed drain mounting base allows direct thermal conduction to PCB copper, whereas SO-8 relies on lead-frame conduction - resulting in ~35 °C lower junction temperature at identical power dissipation.

Can PSMN4R1-30YLC be used with 3.3 V gate drive, and what is its guaranteed turn-on behavior?

With V_GS(th) = 1.05–2.25 V (min–max), it turns on fully at 3.3 V, but R_DS(on) rises significantly: ~12 mΩ at V_GS = 3.3 V / I_D = 10 A / T_j = 25 °C (inferred from Fig. 7). For low-loss operation, 4.5 V or higher gate drive is recommended.