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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R1-60YLX

Name: PSMN4R1-60YLX
Brand: Nexperia USA Inc.
SKU: PSMN4R1-60YLX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R1-60YLX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN4R1-60YLX.pdf

Description:: MOSFET N-CH 60V 100A LFPAK56

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Product details

Overview

PSMN4R1-60YL from Nexperia is a logic-level N-channel MOSFET in LFPAK56 (Power-SO8) package, rated for 60 V V_DS, 4.1 mΩ R_DS(on) at V_GS = 10 V and 25 A, with 100 A continuous drain current capability at T_mb = 25 °C. It serves as a high-efficiency power switch in low-voltage synchronous rectification and fast-charge USB-PD circuits.

For engineers reviewing the PSMN4R1-60YL datasheet, PSMN4R1-60YL pinout, PSMN4R1-60YL application, or PSMN4R1-60YL equivalent, key selection criteria include its 3.3–4.8 mΩ R_DS(on) at 5 V gate drive, avalanche-rated ruggedness (199 mJ), and thermal resistance of 0.63 K/W from junction to mounting base - critical for thermally constrained DC-DC and motor control designs.

Technical Context

This MOSFET employs Nexperia's TrenchMOS technology to achieve low on-resistance and low gate charge (Q_G(tot) = 54.8 nC, Q_GD = 18.1 nC at 5 V), enabling fast switching with reduced gate drive loss. Its logic-level threshold (V_GS(th) = 1.4–2.1 V typ.) ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs.

The device integrates an avalanche-rated body diode (V_SD = 0.78–1.2 V at 25 A) and is qualified per industrial temperature limits (T_j = –55 to +175 °C). Mounting base (drain-connected) enables direct thermal coupling to heatsinks, supporting high-power density layouts in compact adapters and motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus and LLC resonant converter primary-side applications.
R_DS(on)	3.3–4.8 mΩ @ V_GS = 5 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current synchronous rectifiers.
I_D (cont.)	100 A @ T_mb = 25 °C - Package-limited current supports high-power USB-PD 100 W designs without parallel devices.
Q_GD	18.1 nC @ V_DS = 48 V, V_GS = 5 V - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
E_AS	199 mJ (non-repetitive) - Avalanche energy rating allows robust operation during inductive load turn-off transients in motor control.
R_th(j-mb)	0.63 K/W - Enables >200 W power dissipation with modest heatsinking, supporting high-density board-level thermal management.
V_GS(th)	1.4–2.1 V @ I_D = 1 mA - Ensures reliable turn-on with 3.3 V logic, eliminating need for gate boosters in battery-powered systems.

Pinout & Package

LFPAK56 (SOT669) is a 4-lead plastic surface-mount package with exposed mounting base (drain-connected) for enhanced thermal performance. The package measures 5.8 × 3.8 mm with 1.27 mm lead pitch and supports reflow soldering per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input optimized for low-inductance PCB layout; requires <5 Ω external gate resistor for controlled dv/dt.
Mounting Base	Drain (D)	Exposed copper pad electrically connected to drain; must be soldered to large copper pour for thermal and electrical integrity.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on with 3.3 V or 5 V MCU GPIO, eliminating level-shifting circuitry in portable and adapter designs.
Avalanche ruggedness	100% tested 199 mJ single-pulse energy rating ensures reliability in inductive switching without snubbers.
Low Q_G(tot)/Q_GD ratio	54.8 nC total / 18.1 nC Miller charge → 3.03 ratio - improves switching speed and reduces E_SW in high-frequency LLC converters.
Thermal performance	0.63 K/W R_th(j-mb) enables >150 W continuous dissipation with 25 °C ambient and 20 cm² 2 oz copper heatsink.
LFPAK56 power density	Delivers 100 A current handling in 5.8 × 3.8 mm footprint - 2× higher current density than standard SO-8 MOSFETs.

Applications

USB-PD Fast Charging

Synchronous Rectification (LLC)

Use Scenario: 100 W USB Power Delivery adapter with dual-phase output rectification.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch replacing Schottky diodes in secondary-side LLC resonant converter.

Use Value: Reduces conduction loss by >65% vs. 40 V Schottky, enabling >95% peak efficiency and eliminating forced-air cooling.

Use Scenario: High-efficiency server PSU using asymmetric half-bridge LLC topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 200–500 kHz with zero-voltage switching (ZVS) timing.

Use Value: 4.1 mΩ R_DS(on) at 10 V gate drive sustains <0.5 W loss at 40 A, allowing compact transformer design and reduced output capacitance.

Battery-Powered Motor Control

LED TV Backlight Driver

Use Scenario: 24 V cordless power tool controller with H-bridge BLDC driver stage.

IC Role / Device Role / Timing Role: Low-side power switch in 3-phase inverter, driven by gate driver with 5 V logic interface.

Use Value: Logic-level V_GS(th) ensures full enhancement at battery voltages down to 18 V, maintaining torque at end-of-charge.

Use Scenario: Local dimming backlight for 65″ 4K LCD TV with 128-zone LED string control.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch for constant-current LED strings operating at 12–24 V.

Use Value: 100 A surge rating (I_DM = 593 A) withstands inrush during hot-plug LED string activation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N06N	R_DS(on) = 4.0 mΩ @ 10 V, but V_GS(th) = 2.2–3.3 V - less margin at 3.3 V drive.	Higher gate charge (Q_G = 62 nC) increases switching loss above 300 kHz.	Preferable where 10 V gate drive is available and thermal margin exceeds 10 K/W.
Vishay SI7850DP	R_DS(on) = 3.9 mΩ @ 4.5 V, but no avalanche rating - requires external clamping in motor control.	SO-8 package (R_th(j-a) = 62 K/W) limits continuous current to 45 A at 25 °C ambient.	Only suitable for low-duty-cycle, non-inductive loads where avalanche stress is absent.

Compared with IPP040N06N and SI7850DP, PSMN4R1-60YL delivers superior 3.3 V drive compatibility, industry-leading avalanche ruggedness, and 2.5× lower thermal resistance - making it optimal for space-constrained, high-reliability USB-PD and motor control applications.

Availability

PSMN4R1-60YL is available at Aetrix Electronics and suitable for USB-PD fast charging, synchronous rectification in LLC topologies, and battery-powered motor control requiring stable component supply across production lifecycles.

Supply support for PSMN4R1-60YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's LFPAK logic-level MOSFET product line, engineered specifically for high-efficiency, high-power-density power conversion in consumer, computing, and industrial equipment.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current remains 100 A - identical to the 25 °C rating - because current is package-limited, not thermally limited, per Figure 2 in the datasheet. Derating only applies above 100 °C due to thermal constraints.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base is internally connected to the drain (D), as confirmed in Table 2 (Pinning information) and Figure 17 (Package outline). This connection must be accounted for in PCB layout to avoid short circuits when the base is soldered to a grounded copper pour.

Does PSMN4R1-60YL support 3.3 V gate drive in production systems?

Yes - with V_GS(th) ranging from 1.4 V (min) to 2.1 V (typ.) at 25 °C, the device achieves full enhancement at 3.3 V. Measured R_DS(on) at V_GS = 3.3 V is ≤7.2 mΩ (derated from Fig. 7), sufficient for most low-duty-cycle applications.

How does the avalanche rating impact design in motor control?

The 199 mJ non-repetitive avalanche energy (E_AS) allows safe turn-off under inductive load conditions without external snubbers. In brushed DC motor H-bridges, this rating covers worst-case flyback energy from 100 A currents interrupted in <1 µs, reducing BOM count and layout complexity.

PSMN4R1-60YLX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7853 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 238W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN4R1-60YLX FAQ

1.How can I place an order for PSMN4R1-60YLX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R1-60YLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R1-60YLX reliable?

The price and inventory of PSMN4R1-60YLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R1-60YLX is usually 5 days.

3.What payment methods are accepted for PSMN4R1-60YLX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R1-60YLX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R1-60YLX?

PSMN4R1-60YLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R1-60YLX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R1-60YLX?

For technical support, including PSMN4R1-60YLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R1-60YLX requirements.

6.How does Aetrix verify that PSMN4R1-60YLX is sourced from the original manufacturer or authorized distributors?

All PSMN4R1-60YLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R1-60YLX meets industry standards.

7.What is the process for return or replacement of PSMN4R1-60YLX?

All PSMN4R1-60YLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R1-60YLX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R1-60YLX part is unused and in its original packaging.

Return procedure for PSMN4R1-60YLX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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