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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R2-30MLD/2X

Name: PSMN4R2-30MLD/2X
Brand: Nexperia USA Inc.
SKU: PSMN4R2-30MLD/2X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R2-30MLD/2X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN4R2-30MLD/2X.pdf

Description:: PSMN4R2-30MLD/SOT1210/MLFPAK

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Product details

Overview

PSMN4R2-30MLD from Nexperia is an N-channel 30 V, 4.2 mΩ logic-level MOSFET in LFPAK33 (SOT1210) package, optimized for 4.5 V gate drive and high-frequency synchronous rectification. It delivers ultra-low Q_G (9.2–13.8 nC), low R_DS(on) (3.45 mΩ typ @ 10 V), and Schottky-like soft-recovery (s-factor > 1.05) with < 1 µA leakage at 25 °C. Used in secondary-side DC-DC conversion for telecom servers.

For engineers reviewing the PSMN4R2-30MLD datasheet, PSMN4R2-30MLD pinout, PSMN4R2-30MLD application, or PSMN4R2-30MLD equivalent, this page provides verified electrical specs, thermal performance (R_th(j-mb) = 2.09 K/W), LFPAK33 mounting base layout guidance, and validated alternatives for high-efficiency POL and VRM designs.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture, enabling soft reverse recovery (t_rr = 26–52 ns, Q_r = 15–30 nC) without elevated leakage. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) and low C_iss (1197–1795 pF) support stable 4.5 V logic-level switching up to 1 MHz.

The LFPAK33 package uses clip-bonded die attach and exposed drain mounting base (mb), delivering low parasitic inductance/resistance and 175 °C junction rating. Thermal resistance from junction to mounting base is 2.09 K/W, enabling high-current operation (70 A continuous @ T_mb = 25 °C) with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 24 V input rail systems with margin for transients
R_DS(on)	3.45 mΩ typical @ V_GS = 10 V - enables < 0.1 W conduction loss at 50 A
Q_G(tot)	9.2–13.8 nC @ V_GS = 4.5 V - minimizes gate drive power and switching loss at 500 kHz+
t_rr / Q_r	26–52 ns / 15–30 nC - reduces EMI and voltage overshoot during hard commutation
R_th(j-mb)	2.09 K/W - allows direct thermal coupling to PCB copper or heatsink via exposed drain pad
I_D (cont)	70 A @ T_mb = 25 °C - rated for high-current POL modules with forced-air or board-level cooling
V_GS(th)	1.2–2.2 V - ensures full enhancement with standard 3.3 V/5 V logic drivers

Pinout & Package

LFPAK33 (SOT1210) is a leadless, clip-bonded surface-mount package with exposed drain mounting base (mb) for low-inductance, high-power thermal transfer. It features no wire bonds or adhesive, qualified to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate terminal with low RG (0.48–0.95 Ω) for fast, controlled turn-on/turn-off
mb	Mounting Base / Drain (D)	Exposed copper drain pad - serves as primary thermal path and high-current drain connection; soldered directly to PCB thermal plane

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft reverse recovery (s-factor > 1.05) with < 1 µA leakage at 25 °C - eliminates need for external Schottky while avoiding leakage trade-offs
Ultra-low Q_G/Q_GD	9.2–13.8 nC total gate charge and 3.1–4.6 nC gate-drain charge - enables high-efficiency operation above 1 MHz switching frequency
Optimized for 4.5 V drive	R_DS(on) = 4.5–5.7 mΩ @ V_GS = 4.5 V - ensures full enhancement using standard logic-level drivers without level-shifting
Clip-bonded LFPAK33	No wire bonds or die attach glue - improves power cycling reliability and thermal stability up to 175 °C junction temperature
Exposed drain mounting base	Direct thermal interface to PCB - achieves 2.09 K/W junction-to-mounting-base resistance for compact high-power layouts

Applications

Server DC-DC Conversion

Telecom Secondary-Side SR

Use Scenario: High-density 12 V → 1 V/3.3 V point-of-load converters in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side of isolated forward or LLC converter, operating at 300–800 kHz.

Use Value: Low R_DS(on) and soft-recovery minimize conduction + switching losses, improving efficiency by ≥0.8% vs. standard MOSFETs at 50 A load.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom PSUs powering base station RF modules.

IC Role / Device Role / Timing Role: Low-voltage, high-current rectifier replacing Schottky diodes in phase-shifted full-bridge topologies.

Use Value: SchottkyPlus diode behavior reduces voltage overshoot and EMI, allowing smaller output filters and meeting CISPR-32 Class B limits without shielding.

VRM for GPU/ASIC

Brushless Motor Control

Use Scenario: Voltage regulator module supplying dynamic core voltage (V_core) to AI accelerators and high-end GPUs.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck converters with 500 kHz–1 MHz PWM frequency.

Use Value: Ultra-low Q_G and optimized gate charge profile enable precise dead-time control and reduced shoot-through risk under rapid load transients.

Use Scenario: Inverter leg switch in 24 V BLDC motor drives for industrial automation and HVAC fans.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, commutating up to 40 A peak current at 20 kHz PWM.

Use Value: Robust avalanche rating (59 mJ) and 175 °C rating ensure reliable operation during regenerative braking and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N04L	R_DS(on) = 4.0 mΩ @ 10 V; Q_G = 14.5 nC @ 4.5 V; TO-252 package	Higher package inductance and R_th(j-a) = 57 K/W - requires larger PCB copper area for thermal management	Prefer when TO-252 footprint compatibility is required and switching frequency ≤ 300 kHz.
Vishay SiR626DP	R_DS(on) = 3.8 mΩ @ 10 V; Q_G = 12.5 nC @ 4.5 V; PowerPAK SO-8L package	No exposed drain pad - R_th(j-mb) not specified; relies on leads for thermal transfer	Choose when legacy SO-8L layout reuse is critical and thermal budget allows higher junction rise.

Compared with IPP040N04L and SiR626DP, PSMN4R2-30MLD offers superior thermal performance via its exposed drain mounting base (2.09 K/W), lower leakage (<1 µA), and softer diode recovery - making it optimal for high-frequency, high-reliability POL and telecom SR where EMI and thermal density are constrained.

Availability

PSMN4R2-30MLD is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side synchronous rectification, and GPU/ASIC VRMs requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for PSMN4R2-30MLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure - emphasizing low-loss switching, robust thermal design, and Schottky-like diode performance without leakage penalties.

FAQ

What is the maximum continuous drain current for PSMN4R2-30MLD at 100 °C mounting base temperature?

The datasheet specifies 65 A continuous drain current at T_mb = 100 °C and V_GS = 10 V (Table 5, Limiting Values). This derating reflects thermal limits of the LFPAK33 package and is confirmed in Figure 2 - not a silicon limitation but a safe operating area constraint based on package power dissipation capability.

Does PSMN4R2-30MLD have avalanche energy rating, and how is it tested?

Yes - it has a non-repetitive drain-source avalanche energy rating of 59 mJ (Table 5), measured under unclamped inductive switching conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 25 A, V_sup ≤ 30 V, R_GS = 50 Ω, t_p = 122 µs. This rating is 100% production-tested per datasheet footnote [2].

Can PSMN4R2-30MLD be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range is 1.2–2.2 V (Table 7), and R_DS(on) remains low (≤5.7 mΩ) at V_GS = 4.5 V. At 3.3 V, it operates in enhanced mode but with higher R_DS(on); for full performance, use a dedicated 4.5–5 V gate driver. The device is explicitly optimized for 4.5 V drive, not 3.3 V saturation.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practice?

SchottkyPlus delivers soft reverse recovery (s-factor > 1.05) and low Q_r (15–30 nC), mimicking Schottky diode behavior during turn-off - reducing voltage spikes and EMI. Crucially, it maintains <1 µA leakage at 25 °C, unlike integrated Schottky MOSFETs which typically exhibit >10 µA leakage, enabling use in standby-sensitive applications.

PSMN4R2-30MLD/2X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 29.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1795 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN4R2-30MLD/2X FAQ

1.How can I place an order for PSMN4R2-30MLD/2X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R2-30MLD/2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R2-30MLD/2X reliable?

The price and inventory of PSMN4R2-30MLD/2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R2-30MLD/2X is usually 5 days.

3.What payment methods are accepted for PSMN4R2-30MLD/2X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R2-30MLD/2X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R2-30MLD/2X?

PSMN4R2-30MLD/2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R2-30MLD/2X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R2-30MLD/2X?

For technical support, including PSMN4R2-30MLD/2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R2-30MLD/2X requirements.

6.How does Aetrix verify that PSMN4R2-30MLD/2X is sourced from the original manufacturer or authorized distributors?

All PSMN4R2-30MLD/2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R2-30MLD/2X meets industry standards.

7.What is the process for return or replacement of PSMN4R2-30MLD/2X?

All PSMN4R2-30MLD/2X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R2-30MLD/2X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R2-30MLD/2X part is unused and in its original packaging.

Return procedure for PSMN4R2-30MLD/2X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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