Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R2-30MLDX

Name: PSMN4R2-30MLDX
Brand: Nexperia USA Inc.
SKU: PSMN4R2-30MLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN4R2-30MLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN4R2-30MLDX.pdf

Description:: MOSFET N-CH 30V 70A LFPAK33

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,448

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN4R2-30MLDX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 30 V V_DS, 4.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and optimized for 4.5 V gate drive. It delivers ultra-low Q_G (9.2–13.8 nC), Q_GD (3.1–4.6 nC), and soft-recovery diode performance (s-factor > 1.05), targeting high-efficiency, high-frequency DC-DC conversion in server power supplies.

For engineers reviewing the PSMN4R2-30MLDX datasheet, PSMN4R2-30MLDX pinout, PSMN4R2-30MLDX application, or PSMN4R2-30MLDX equivalent, this page provides verified package mapping, validated thermal resistance (R_th(j-mb) = 2.09–2.32 K/W), confirmed SchottkyPlus diode behavior (<1 µA I_DSS at 25 °C), and real-world use cases in POL modules and synchronous rectification.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-achieving Schottky-like reverse recovery (t_rr = 26–52 ns, Q_r = 15–30 nC) without elevated leakage. Its LFPAK33 clip-bonded die attach eliminates wire bonds and glue, enabling 175 °C junction operation and low parasitic inductance.

The device features gate threshold voltage V_GS(th) = 1.2–2.2 V (typ. 1.7 V), guaranteed turn-on at 4.5 V, and exhibits monotonic R_DS(on) increase with temperature (ΔR_DS(on)/ΔT ≈ +0.3%/°C). Its C_iss = 1197–1795 pF and Crss = 87–130 pF support clean switching with minimal Miller-induced oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 24 V bus systems
R_DS(on)	4.2 mΩ max at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 70 A continuous current
Q_G(tot)	9.2–13.8 nC at V_GS = 4.5 V - reduces gate drive power and enables >1 MHz switching in VRMs
t_rr	26–52 ns - minimizes reverse recovery loss and EMI in hard-switched synchronous rectifiers
R_th(j-mb)	2.09–2.32 K/W - supports 65 W dissipation with modest heatsinking on PCB mounting base
I_D	70 A continuous at T_mb = 25 °C - limited by package thermal capacity, not silicon
V_GS(th)	1.2–2.2 V - ensures full enhancement with standard 3.3 V or 5 V logic-level drivers

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, lead-frame-based surface-mount package with exposed copper mounting base connected to drain, offering superior thermal and electrical performance versus SO-8. It features no wire bonds or die attach adhesive and is qualified to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input with low RG (0.48–0.95 Ω) for fast, controlled edge rates
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft reverse recovery (s-factor > 1.05) with <1 µA leakage at 25 °C - eliminates trade-off between low Q_r and high I_DSS
Ultra-low gate charge	Q_G(tot) = 9.2–13.8 nC at 4.5 V - cuts gate driver losses and enables efficient 500 kHz–2 MHz operation
Optimized for 4.5 V drive	V_GS(th) = 1.7 V typ., R_DS(on) = 4.5–5.7 mΩ at V_GS = 4.5 V - ensures robust conduction with common logic-level controllers
High-reliability construction	Clip-bonded die, solder die attach, no wire bonds or epoxy - achieves 175 °C qualification and enhanced power cycling endurance
Low-inductance layout	Integrated source leads and exposed drain base minimize loop inductance - critical for reducing voltage spikes in synchronous buck converters

Applications

Server DC-DC Converter

Telecom Secondary-Side SR

Use Scenario: High-density 12 V input → 1 V/100 A output VRM in cloud server CPU power delivery.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5 V gate drive from controller IC.

Use Value: 4.2 mΩ R_DS(on) and 26 ns t_rr cut conduction and recovery losses by >15% vs. standard trench MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Isolated 48 V → 12 V DC-DC module in telecom base station power system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode in forward or LLC topology.

Use Value: SchottkyPlus diode enables zero-voltage switching assist while maintaining <1 µA leakage - avoids thermal runaway risk in high-ambient environments.

POL Module for GPU

Brushless Motor Control

Use Scenario: Point-of-load regulator delivering 0.8 V/60 A to discrete GPU on PCIe card.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage switch in multiphase buck converter with integrated FET drivers.

Use Value: 70 A continuous rating and 2.09 K/W R_th(j-mb) allow direct PCB copper heatsinking - eliminates need for external heatsinks in space-constrained modules.

Use Scenario: 24 V three-phase inverter driving BLDC fan in industrial HVAC control unit.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 30 A peak phase current with PWM up to 20 kHz.

Use Value: Soft-recovery diode and low Q_GD (3.1–4.6 nC) suppress shoot-through risk and reduce EMI filtering requirements in motor gate drive loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R3-30YLH	Lower R_DS(on) (3.3 mΩ @ 10 V), higher Q_G (15.5 nC), same LFPAK33 package and 30 V rating	Better conduction loss at high current, but higher gate drive demand limits max switching frequency	Prefer for <500 kHz applications where conduction loss dominates; avoid if gate driver is current-limited
IRLHS6342	SO-8 package, 3.4 mΩ R_DS(on), 12.5 nC Q_G, higher R_th(j-a) (57 K/W), no SchottkyPlus diode	Higher thermal resistance and slower diode recovery (t_rr > 100 ns) limit use in high-frequency, high-temperature designs	Acceptable for cost-sensitive, lower-power (<20 A), non-critical EMI applications; not recommended for server POL or telecom SR

Compared with PSMN4R2-30MLDX, PSMN3R3-30YLH trades higher gate charge for lower on-resistance, while IRLHS6342 sacrifices thermal performance and diode quality for legacy SO-8 compatibility - making PSMN4R2-30MLDX optimal for high-frequency, high-reliability 30 V power stages requiring balanced Q_G/R_DS(on)/t_rr.

Availability

PSMN4R2-30MLDX is available at Aetrix Electronics and suitable for server DC-DC converters, telecom secondary-side synchronous rectification, and GPU point-of-load modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN4R2-30MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including MOSFETs, logic, bipolar transistors, and ESD protection devices - with manufacturing rooted in process innovation and automotive-grade quality systems.

This part belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low Q_G, soft diode recovery, and robust thermal performance are mandatory.

FAQ

What is the maximum continuous drain current for PSMN4R2-30MLDX at 100 °C mounting base temperature?

The datasheet specifies 65 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This derating reflects thermal limits of the LFPAK33 package rather than silicon capability, and is validated in Figure 2 of the product data sheet. Operation above this current requires active cooling or reduced ambient conditions.

Does PSMN4R2-30MLDX have an integrated Schottky diode?

No - it uses Nexperia's "SchottkyPlus" technology, which delivers Schottky-like soft reverse recovery (t_rr = 26–52 ns, s-factor > 1.05) without an actual integrated Schottky junction. This avoids the high leakage current typical of true Schottky diodes, maintaining I_DSS < 1 µA at 25 °C per datasheet Table 7.

Can PSMN4R2-30MLDX be driven directly from a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) range is 1.2–2.2 V (typ. 1.7 V), and it delivers R_DS(on) = 5.7 mΩ max at V_GS = 4.5 V. At 3.3 V, R_DS(on) rises to ~12–15 mΩ (per Fig. 8), which is usable for low-duty-cycle or low-current applications but not recommended for continuous 70 A operation. For full performance, ≥4.5 V drive is required.

What is the thermal resistance from junction to mounting base, and how is it measured?

R_th(j-mb) is 2.09–2.32 K/W, measured per JEDEC JESD51-14 with the mounting base soldered to a 1" × 1" 2 oz copper pad on FR4. This value reflects the dominant thermal path in real PCB layouts and is used to calculate junction temperature: T_j = T_mb + (P_diss × R_th(j-mb)). It excludes ambient convection effects.

PSMN4R2-30MLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 29.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1795 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN4R2-30MLDX FAQ

1.How can I place an order for PSMN4R2-30MLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R2-30MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R2-30MLDX reliable?

The price and inventory of PSMN4R2-30MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R2-30MLDX is usually 5 days.

3.What payment methods are accepted for PSMN4R2-30MLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R2-30MLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R2-30MLDX?

PSMN4R2-30MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R2-30MLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R2-30MLDX?

For technical support, including PSMN4R2-30MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R2-30MLDX requirements.

6.How does Aetrix verify that PSMN4R2-30MLDX is sourced from the original manufacturer or authorized distributors?

All PSMN4R2-30MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R2-30MLDX meets industry standards.

7.What is the process for return or replacement of PSMN4R2-30MLDX?

All PSMN4R2-30MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R2-30MLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R2-30MLDX part is unused and in its original packaging.

Return procedure for PSMN4R2-30MLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…