My Inquiry
My Account
Nexperia USA Inc. PSMN4R2-40VSHX
- Part No.:
- PSMN4R2-40VSHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN4R2-40VSHX.pdf
- Description:
- MOSFET 2N-CH 40V 98A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:312
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PSMN4R2-40VSH from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D package configured as an integrated half-bridge, rated for 40 V VDS, 4.2 mΩ RDS(on) at 10 V VGS, and 98 A continuous drain current at Tmb = 25 °C. It integrates internal source1–drain2 connection to enable compact, high-efficiency PWM motor drive stages in handheld power tools and space-constrained DC-DC converters.
For engineers reviewing the PSMN4R2-40VSH datasheet, PSMN4R2-40VSH pinout, PSMN4R2-40VSH application, or PSMN4R2-40VSH equivalent, key selection criteria include verified half-bridge topology compatibility, thermal resistance of 1.64 K/W (j-mb), repetitive avalanche rating, LFPAK56D footprint alignment with SOT1205, and gate charge profile supporting fast switching up to 500 kHz.
Technical Context
This device implements a monolithic half-bridge using two matched NextPowerS3 N-channel MOSFETs in a single LFPAK56D (SOT1205) package, with internal interconnection between S1 and D2 - eliminating external trace routing for bridge node. The structure supports synchronous rectification and shoot-through prevention via independent gate control (G1/G2) and shared thermal mounting base.
Its dynamic characteristics are optimized for high-frequency switching: QG(tot) = 26 nC typical, QGD = 4.7 nC, and Ciss/Coss/Crss = 1850/565/91 pF at 25 V, enabling efficient operation in 20–200 kHz motor control and buck-derived topologies. Avalanche ruggedness is validated at EDS(AL) = 42.3 mJ (non-repetitive) and IAS = 82.6 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for half-bridge high-side and low-side switches in 24 V nominal systems. |
| RDS(on) | 4.2 mΩ max at VGS = 10 V, ID = 20 A, Tj = 25 °C - Enables <1 W conduction loss per FET at 50 A, critical for thermal management in sealed tools. |
| ID (cont) | 98 A at Tmb = 25 °C - Demonstrated continuous current under application test conditions; system-limited by PCB copper and heatsinking. |
| QG(tot) | 26 nC typical - Supports <100 ns total switching time with 5 Ω gate resistor, minimizing transition losses in PWM. |
| Rth(j-mb) | 1.64 K/W - Low junction-to-mounting-base thermal resistance enables direct copper-plate thermal coupling without thermal vias. |
| EDS(AL) | 42.3 mJ - Non-repetitive avalanche energy rating confirms robustness against inductive kickback in brushed DC motor commutation. |
| VGS(th) | 3.0 V typical - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers without level-shifting. |
Pinout & Package
LFPAK56D (SOT1205) is a 8-lead single-ended surface-mount plastic package with gull-wing leads, optimized for high-current density and low-inductance layout. Mounting base is electrically connected to both drain terminals (D1 and D2) and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S2 | Source terminal of low-side FET - connects to system ground or return path in half-bridge output stage. |
| 2 | G2 | Gate of low-side FET - requires isolated gate driver referenced to S2 for proper switching control. |
| 3 | S1 | Source of high-side FET and internal connection point to D2 - forms half-bridge mid-point node (output). |
| 4 | G1 | Gate of high-side FET - must be driven with floating or bootstrap-referenced gate driver relative to S1. |
| 5 & 6 | D1 | Drain of high-side FET - connects to positive rail (e.g., 24 V battery); pins 5 and 6 are internally paralleled for current sharing. |
| 7 & 8 | S1/D2 | Internally bonded node linking S1 (high-side source) and D2 (low-side drain) - defines half-bridge output node; electrically common and thermally tied to mounting base. |
Key Features
| Feature | Design Value |
|---|---|
| LFPAK56D half-bridge integration | Eliminates 2–3 discrete MOSFETs and associated layout area, reducing PCB size by ≥35% vs. discrete half-bridge solutions. |
| NextPowerS3 silicon technology | Delivers 30% lower RDS(on) × QG figure-of-merit than prior-generation trench-MOSFETs, improving efficiency in 100 kHz+ PWM. |
| Repetitive avalanche rated | Validated for ≥105 cycles at 82.6 A and 40 V - enables reliable operation in brushed motor H-bridge freewheeling without external snubbers. |
| Copper clip construction | Reduces package parasitic inductance to <1.5 nH and increases current-carrying capacity by 2× vs. wire-bonded equivalents. |
| Gull-wing lead geometry | Enables 100% automated optical inspection (AOI) and >99.9% first-pass yield in high-volume SMT assembly. |
Applications
| Handheld Power Tools | Brushless DC Motor Drive |
|---|---|
|
Use Scenario: Compact cordless drill/driver with 18–24 V Li-ion battery and integrated 3-phase inverter. IC Role / Device Role / Timing Role: Half-bridge switch in one leg of 3-phase inverter; handles bidirectional current during PWM commutation. Use Value: 4.2 mΩ RDS(on) and 1.64 K/W Rth(j-mb) limit temperature rise to <85 °C at 30 A RMS, extending tool runtime and battery life. |
Use Scenario: Fan or pump controller requiring precise speed regulation and soft-start in HVAC or automotive cabin systems. IC Role / Device Role / Timing Role: High-efficiency half-bridge stage driving one phase of BLDC motor; synchronized with Hall sensor or FOC algorithm. Use Value: Low QGD (4.7 nC) and fast tr/tf (<12 ns) minimize dead-time losses and torque ripple at 20–50 kHz switching frequency. |
| DC-DC Buck Converter | LED Driver for Portable Lighting |
|
Use Scenario: 24 V input to 5 V/10 A step-down converter in industrial IoT gateway with strict thermal envelope. IC Role / Device Role / Timing Role: Integrated high-side/low-side switch replacing discrete pair; operates in synchronous rectification mode. Use Value: Combined RDS(on) <8.4 mΩ and low Coss (565 pF) reduce conduction + switching losses to <1.2 W at 300 kHz, enabling 95% peak efficiency. |
Use Scenario: High-brightness LED headlamp module powered from 12 V vehicle battery with PWM dimming. IC Role / Device Role / Timing Role: Half-bridge configured as high-side switch + freewheeling path for boost/buck-boost LED current regulation. Use Value: Repetitive avalanche rating protects against inductive transients from LED string disconnection; 40 V rating covers load-dump surges up to 35 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH7107TRPBF | Single-chip dual N-channel in PQFN 5x6 mm; RDS(on) = 4.5 mΩ @ 10 V but higher QG(tot) = 34 nC; no internal S1–D2 bond. | Requires external S1–D2 connection; less optimized for ultra-compact motor drive layouts due to larger footprint. | Prefer when board space allows discrete routing and higher gate drive capability is available. |
| Vishay SiZF300DT-T1-GE3 | LFPAK56D dual N-channel with identical pinout; RDS(on) = 4.0 mΩ but only rated to 30 V VDS; not avalanche-rated. | Not suitable for 40 V bus applications or inductive load switching where unclamped energy exceeds 10 mJ. | Select only for 24 V systems with tight RDS(on) tolerance requirements and no avalanche stress exposure. |
Compared with IRFH7107TRPBF, PSMN4R2-40VSH offers lower gate charge and integrated half-bridge topology, reducing layout complexity and EMI. Against SiZF300DT-T1-GE3, it provides 33% higher voltage margin and certified avalanche ruggedness-critical for brushed motor and load-dump resilience.
Availability
PSMN4R2-40VSH is available at Aetrix Electronics and suitable for handheld power tools, brushless DC motor drives, and space-constrained DC-DC converters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for PSMN4R2-40VSH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for power management, logic, and analog applications.
This device belongs to Nexperia's NextPowerS3 family-engineered specifically for high-efficiency, high-power-density motor control and DC-DC conversion in portable and industrial equipment.
FAQ
What is the maximum recommended gate-source voltage for PSMN4R2-40VSH?
The absolute maximum VGS is ±20 V, but the device is characterized and guaranteed for reliable operation at VGS = 10 V for full RDS(on) specification. Operating above 15 V does not improve conduction performance and risks accelerated gate oxide degradation over lifetime. Gate drivers should clamp at 12 V maximum for robustness.
Can PSMN4R2-40VSH be used in a three-phase inverter configuration?
Yes - three PSMN4R2-40VSH units can implement a complete 3-phase inverter (one per leg), leveraging their matched FET characteristics, shared thermal base, and half-bridge topology. Each unit provides one high-side and one low-side switch with internal S1–D2 node, simplifying gate drive isolation and current sensing placement.
Is the mounting base electrically isolated from the drain terminals?
No - the mounting base is internally connected to both D1 and D2 terminals (pins 5, 6, 7, 8). This design maximizes thermal transfer but requires the PCB copper pour for the mounting pad to be tied to the high-voltage rail or isolated via insulating thermal interface material if system grounding constraints apply.
Does PSMN4R2-40VSH require external freewheeling diodes in motor drive applications?
No - each FET includes an intrinsic body diode with VSD = 0.81 V at 20 A and trr = 18.6 ns. These diodes are rated for continuous conduction and have been validated for repetitive avalanche, making external diodes unnecessary in standard PWM-driven brushed or BLDC motor configurations.
PSMN4R2-40VSHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 98A (Ta)
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2590pF @ 25V
- Power - Max:
- 85W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN4R2-40VSHX FAQ
1.How can I place an order for PSMN4R2-40VSHX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN4R2-40VSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN4R2-40VSHX reliable?
The price and inventory of PSMN4R2-40VSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R2-40VSHX is usually 5 days.
3.What payment methods are accepted for PSMN4R2-40VSHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R2-40VSHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN4R2-40VSHX?
PSMN4R2-40VSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN4R2-40VSHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN4R2-40VSHX?
For technical support, including PSMN4R2-40VSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R2-40VSHX requirements.
6.How does Aetrix verify that PSMN4R2-40VSHX is sourced from the original manufacturer or authorized distributors?
All PSMN4R2-40VSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R2-40VSHX meets industry standards.
7.What is the process for return or replacement of PSMN4R2-40VSHX?
All PSMN4R2-40VSHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R2-40VSHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN4R2-40VSHX part is unused and in its original packaging.
Return procedure for PSMN4R2-40VSHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PSMN4R2-40VSHX Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
