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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R2-60PLQ

Name: PSMN4R2-60PLQ
Brand: Nexperia USA Inc.
SKU: PSMN4R2-60PLQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R2-60PLQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN4R2-60PLQ.pdf

Description:: MOSFET N-CH 60V 130A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN4R2-60PL from Nexperia is a logic-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 60 V drain-source voltage, 3.9 mΩ R_DS(on) at V_GS = 10 V and 25 A, and optimized for battery-powered power tools. It delivers high efficiency via low conduction and switching losses, supports 130 A continuous drain current with heatsink mounting, and features robust avalanche ruggedness (283 mJ).

For engineers reviewing the PSMN4R2-60PL datasheet, PSMN4R2-60PL pinout, PSMN4R2-60PL application, or PSMN4R2-60PL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) typ. 1.7 V), thermal resistance to mounting base (0.49 K/W), total gate charge (151 nC), and safe operating area under pulsed motor load conditions.

Technical Context

This TrenchMOS device uses optimized silicon and packaging to minimize R_DS(on) while maintaining fast switching (t_r = 97 ns, t_f = 73 ns) and low gate charge (Q_G(tot) = 151 nC). Its logic-level threshold (V_GS(th) max 2.1 V at 25 °C) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The SOT78 package provides low junction-to-mounting-base thermal resistance (0.49 K/W typ.), enabling high-power operation when heatsink-mounted. Avalanche energy rating (283 mJ, unclamped) supports reliable operation in inductive load switching like motor control and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24–48 V battery systems and motor drive rails.
R_DS(on)	3.17 mΩ (typ.) at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for thermal management in compact tools.
I_D (continuous)	130 A at T_mb = 25 °C - Limited by TO-220AB package; usable up to 124 A at 100 °C mounting base temperature.
Q_G(tot)	151 nC - Determines gate driver strength requirement; compatible with standard 1–2 A peak drivers for <100 kHz PWM.
E_AS	283 mJ (unclamped) - Supports single-pulse inductive energy absorption in motor commutation without external snubbers.
R_th(j-mb)	0.49 K/W (typ.) - Enables ~130 W dissipation with ≤65 K rise above heatsink, essential for sustained tool runtime.
V_GS(th)	1.4–2.1 V (25 °C) - Ensures full enhancement at 4.5 V logic supply, eliminating need for gate boosters in 5 V MCU designs.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base, 3 leads, and one mounting hole. Mounting base (mb) serves as thermal interface and electrical connection to drain.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Logic-level control input; requires ≤2.1 V to turn on; driven directly by 3.3 V/5 V MCUs.
2	D (Drain)	Main high-side or low-side power path; electrically connected to mounting base for thermal and current conduction.
3	S (Source)	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max 2.1 V enables direct interface with 3.3 V/5 V microcontrollers-no level shifter required.
Low R_DS(on) × Q_G figure of merit	3.17 mΩ × 151 nC = 479 mΩ·nC-balances conduction and switching loss for high-efficiency motor inverters.
High avalanche energy rating	283 mJ unclamped E_AS allows reliable operation during inductive flyback in brushed DC motor control.
Thermally optimized TO-220AB	0.49 K/W R_th(j-mb) supports >120 W continuous dissipation with standard heatsinking-critical for cordless tool duty cycles.
Robust body diode	Q_r = 59 nC, t_rr = 40 ns-enables efficient freewheeling in half-bridge configurations without external Schottky.

Applications

Battery-Powered Power Tools

Motor Control in Cordless Drills

Use Scenario: High-current H-bridge or 3-phase inverter driving brushed/brushless motors in cordless drills, saws, and impact drivers.

IC Role / Device Role / Timing Role: Main power switch handling bidirectional 50–130 A pulsed currents at 10–25 kHz PWM frequency.

Use Value: Low R_DS(on) minimizes heat generation during burst-mode operation; logic-level gate ensures responsive torque control from 32-bit MCU.

Use Scenario: Single-ended or half-bridge load switching for speed-regulated DC motors in handheld tools with variable torque demand.

IC Role / Device Role / Timing Role: Low-side or high-side switch controlling motor phase current with fast turn-on (47 ns td(on)) and clean fall time (73 ns tf).

Use Value: 283 mJ avalanche rating absorbs inductive kickback during abrupt stop/start, extending MOSFET lifetime beyond 10,000 actuation cycles.

Uninterruptible Power Supplies (UPS)

Industrial Load Switching

Use Scenario: DC bus switching and battery isolation in offline UPS systems with 24–48 V nominal battery banks.

IC Role / Device Role / Timing Role: Bidirectional load switch managing battery charge/discharge paths and AC/DC transfer sequencing.

Use Value: 60 V rating and 130 A current capability support 1–2 kVA UPS designs; low leakage (IDSS < 1 µA) prevents standby battery drain.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules and industrial HVAC actuators.

IC Role / Device Role / Timing Role: High-reliability, zero-crossing-free switching element handling resistive and inductive loads up to 1 kW.

Use Value: Robust construction and 175 °C max junction temperature ensure stable operation in 70 °C cabinet environments without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V, but V_GS(th) = 2–4 V (wider spread); Q_G = 131 nC; TO-220AB package.	Less consistent turn-on at 4.5 V; higher gate charge increases driver loss at >50 kHz.	Prefer PSMN4R2-60PL where 3.3 V MCU drive or tighter V_GS(th) tolerance is required.
STP60NF06L	R_DS(on) = 5.5 mΩ @ 10 V; V_GS(th) = 1–2.5 V; Q_G = 120 nC; TO-220 package.	Higher conduction loss reduces efficiency in high-current tools; lower Q_G eases driver design.	Choose PSMN4R2-60PL for battery tools demanding <4 mΩ R_DS(on) and 130 A capability.

Compared with IRF1404PBF and STP60NF06L, PSMN4R2-60PL offers the lowest R_DS(on) among logic-level 60 V TO-220 devices, superior thermal resistance, and tighter V_GS(th) distribution-making it optimal for thermally constrained, high-pulse-current applications like cordless power tools.

Availability

PSMN4R2-60PL is available at Aetrix Electronics and suitable for battery-powered tools, uninterruptible power supplies, and industrial load switching requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for PSMN4R2-60PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade MOSFETs.

The PSMN4R2-60PL belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current battery-operated equipment where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PSMN4R2-60PL?

The maximum continuous drain current is 130 A at mounting base temperature (T_mb) = 25 °C, derating to 124 A at T_mb = 100 °C. This rating assumes proper heatsinking per the TO-220AB package's 0.49 K/W typical thermal resistance to mounting base.

Can PSMN4R2-60PL be driven directly by a 3.3 V microcontroller?

Yes-its gate-source threshold voltage (V_GS(th)) ranges from 1.4 V to 2.1 V at 25 °C, ensuring full enhancement at 3.3 V. The device achieves R_DS(on) = 4.3 mΩ at V_GS = 4.5 V, making it suitable for direct 3.3 V/5 V logic drive without gate boosting.

What is the significance of the 283 mJ avalanche energy rating?

This non-repetitive drain-source avalanche energy (E_AS) specifies the device's ability to absorb inductive energy during unclamped inductive switching events-such as motor commutation or relay de-energization-without failure. It enables robust operation in motor control without external snubber circuits.

How does the TO-220AB (SOT78) package differ from standard TO-220AB in thermal performance?

The SOT78 variant features an optimized internal leadframe and die attach that achieves a typical junction-to-mounting-base thermal resistance (R_th(j-mb)) of 0.49 K/W-lower than many legacy TO-220AB parts-enabling higher continuous power dissipation (263 W at T_mb = 25 °C) in space-constrained tool designs.

PSMN4R2-60PLQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 151 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8533 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 263W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN4R2-60PLQ FAQ

1.How can I place an order for PSMN4R2-60PLQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R2-60PLQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R2-60PLQ reliable?

The price and inventory of PSMN4R2-60PLQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R2-60PLQ is usually 5 days.

3.What payment methods are accepted for PSMN4R2-60PLQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R2-60PLQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R2-60PLQ?

PSMN4R2-60PLQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R2-60PLQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R2-60PLQ?

For technical support, including PSMN4R2-60PLQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R2-60PLQ requirements.

6.How does Aetrix verify that PSMN4R2-60PLQ is sourced from the original manufacturer or authorized distributors?

All PSMN4R2-60PLQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R2-60PLQ meets industry standards.

7.What is the process for return or replacement of PSMN4R2-60PLQ?

All PSMN4R2-60PLQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R2-60PLQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R2-60PLQ part is unused and in its original packaging.

Return procedure for PSMN4R2-60PLQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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