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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R2-80YSEX

Name: PSMN4R2-80YSEX
Brand: Nexperia USA Inc.
SKU: PSMN4R2-80YSEX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R2-80YSEX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMN4R2-80YSEX.pdf

Description:: PSMN4R2-80YSE/SOT1023/4 LEADS

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Product details

Overview

PSMN4R2-80YSEX from Nexperia is an N-channel enhancement-mode MOSFET in LFPAK56E (SOT1023) package, rated for 80 V V_DS, 4.2 mΩ R_DS(on) at T_j = 25 °C, 170 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It delivers robust linear-mode SOA performance for hot-swap and e-fuse applications in 48 V telecom power rails.

For engineers reviewing the PSMN4R2-80YSEX datasheet, PSMN4R2-80YSEX pinout, PSMN4R2-80YSEX application, or PSMN4R2-80YSEX equivalent, this page provides verified pin functions, thermal resistance (R_th(j-mb) = 0.45 K/W), avalanche energy rating (374 mJ), gate charge profile (Q_G(tot) = 73 nC typ), and real-world load-switching use cases.

Technical Context

This MOSFET employs a copper-clip LFPAK56E construction enabling low parasitic inductance and high thermal conductivity to mounting base. Its enhanced SOA is validated across pulse widths up to 100 ms and drain-source voltages up to 80 V, with linear-mode operation supported by tightly controlled R_DS(on) temperature coefficient (−6.1 mV/K).

The device features a 100% tested unclamped avalanche capability (E_AS = 374 mJ), fast switching dynamics (t_r = 25 ns, t_f = 24 ns), and gate threshold voltage (V_GS(th)) of 2.6 V typ at 25 °C - optimized for compatibility with standard 5 V and 10 V gate drivers in hot-swap controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V maximum drain-source voltage - supports 48 V backplane systems with ≥1.6× safety margin against transients.
R_DS(on)	4.2 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.5 W conduction loss at 60 A DC.
I_D (cont)	170 A at T_mb = 25 °C - validated continuous current under ideal PCB thermal conditions per Fig. 2.
E_AS	374 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off events in e-fuse protection.
Q_G(tot)	73 nC typical total gate charge - balances switching speed and driver loss in 100–500 kHz hot-swap control loops.
R_th(j-mb)	0.45 K/W typical junction-to-mounting-base thermal resistance - enables >250 W power dissipation with 100 K ΔT to heatsink.
t_r/t_f	25 ns rise / 24 ns fall time - supports fast, controlled turn-on for soft-start without excessive dI/dt-induced noise.

Pinout & Package

LFPAK56E (SOT1023) is a 4-lead, single-ended surface-mount copper-clip package with 1.27 mm pitch and 30 mm² footprint - 80% smaller than D2PAK while delivering superior thermal and SOA performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with 1.04 Ω typical gate resistance - compatible with standard MOSFET drivers without external gate resistor.
Mounting Base (mb)	Drain (D)	Exposed copper drain pad soldered directly to PCB thermal plane - primary heat path to heatsink or copper pour.

Key Features

Feature	Design Value
Enhanced Safe Operating Area (SOA)	Validated linear-mode operation up to 100 ms pulses at 80 V - critical for reliable hot-swap inrush limiting.
Low R_DS(on) with tight tempco	R_DS(on) = 4.2 mΩ @ 25 °C, rising only 1.9× at 175 °C - ensures stable conduction loss over full industrial temperature range.
High-current source configuration	Triple-source-pin layout minimizes source loop inductance - reduces voltage overshoot during fast turn-off in e-fuse mode.
Avalanche ruggedness	374 mJ E_AS with 100% production test - eliminates need for external snubbers in unclamped inductive load switching.
Thermal efficiency	R_th(j-mb) = 0.45 K/W - enables >2× higher power density vs. TO-252 or D2PAK in same PCB area.

Applications

Hot Swap Controller Interface

48 V Telecom Load Switch

Use Scenario: Insertion of line cards into live 48 V backplane with controlled inrush current.

IC Role / Device Role / Timing Role: Main power FET in discrete or controller-assisted hot-swap circuit; operates in linear mode during ramp-up, then fully ON.

Use Value: 374 mJ avalanche rating and extended SOA prevent failure during repeated plug-in events; 4.2 mΩ R_DS(on) limits steady-state loss to <1.2 W at 55 A.

Use Scenario: Remote ON/OFF control of 48 V distributed power modules in base station equipment.

IC Role / Device Role / Timing Role: High-side load switch driven by microcontroller GPIO or dedicated load-switch IC.

Use Value: Triple-source pins suppress ringing during 100 A+ switching; 170 A continuous rating supports peak loads without derating on 2-oz copper.

Programmable E-Fuse Protection

Soft-Start Circuit for DC-DC Modules

Use Scenario: Overcurrent protection for 48 V intermediate bus supplying multiple POL converters.

IC Role / Device Role / Timing Role: Current-sense FET in analog or digital e-fuse IC feedback path; conducts fault current until trip.

Use Value: Linear-mode SOA allows sustained 30–50 A fault currents for 10–100 ms before shutdown - enables selective downstream fault isolation.

Use Scenario: Controlled ramp-up of output voltage in high-power 48 V → 12 V/5 V DC-DC converters.

IC Role / Device Role / Timing Role: Gate-controlled series FET between input rail and converter input capacitor bank.

Use Value: 25 ns rise time enables precise 1–10 ms soft-start timing; low Q_G (73 nC) permits direct drive from low-power PWM generator.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN3R3-80YSF	R_DS(on) = 3.3 mΩ typ at 25 °C; higher gate charge (Q_G(tot) = 92 nC); same LFPAK56E package.	Better conduction loss but slower switching - preferred where efficiency dominates over dynamic loss.	Select when system thermal design prioritizes <1 W conduction loss at >80 A, and gate driver can support higher Q_G.
IPB037N08N5	TO-263-7 package; R_DS(on) = 3.7 mΩ; lower SOA rating (220 mJ E_AS); no triple-source configuration.	Larger footprint (100 mm² vs. 30 mm²); less effective for high-di/dt hot-swap due to higher source inductance.	Choose only if legacy TO-263 layout reuse is required and avalanche energy margin is verified below 300 mJ.

Compared with PSMN3R3-80YSF, PSMN4R2-80YSEX trades 0.9 mΩ higher R_DS(on) for 25% lower Q_G(tot) and identical SOA - favoring faster switching and reduced driver stress. Against IPB037N08N5, it delivers 80% smaller footprint, 70% better avalanche energy, and lower source inductance - critical for next-gen compact hot-swap designs.

Availability

PSMN4R2-80YSEX is available at Aetrix Electronics and suitable for hot-swap controllers, 48 V telecom load switches, and programmable e-fuse circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN4R2-80YSEX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions - spun off from Philips in 2017 and headquartered in Nijmegen, Netherlands.

This device belongs to Nexperia's ASFETs for Hotswap portfolio, engineered specifically for robust linear-mode operation, high-current handling, and compact thermal management in 48 V infrastructure power systems.

FAQ

What is the maximum continuous drain current for PSMN4R2-80YSEX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 123 A per Figure 2 of the datasheet. This value reflects thermal derating due to reduced heat transfer efficiency at elevated mounting temperatures - not a device limitation but a PCB-dependent operational boundary.

Does PSMN4R2-80YSEX require a gate resistor for safe operation with a 5 V microcontroller GPIO?

No external gate resistor is required for basic ON/OFF control from a 5 V GPIO, as V_GS(th) is 2.6 V typical and the device turns fully ON at V_GS ≥ 4.5 V. However, a 5–10 Ω series resistor is recommended to dampen ringing during fast switching in high-di/dt applications like hot-swap.

How is the mounting base (drain) electrically isolated from the PCB in standard layouts?

The mounting base is the drain terminal and is not electrically isolated - it must be connected to the high-side DC rail (e.g., 48 V) via soldered copper pour. Isolation is achieved by routing adjacent traces with ≥0.5 mm clearance and using appropriate dielectric thickness per IPC-2221; no internal insulation exists.

Can PSMN4R2-80YSEX replace older D2PAK MOSFETs without PCB redesign?

No - LFPAK56E (SOT1023) has a 30 mm² footprint versus ~150 mm² for D2PAK. Direct replacement requires new land pattern per Figure 20 (reflow footprint) and thermal via placement aligned to the 4.45 × 4.95 mm mounting base. The smaller size enables denser layouts but mandates layout revision.

PSMN4R2-80YSEX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8000 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN4R2-80YSEX FAQ

1.How can I place an order for PSMN4R2-80YSEX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R2-80YSEX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R2-80YSEX reliable?

The price and inventory of PSMN4R2-80YSEX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R2-80YSEX is usually 5 days.

3.What payment methods are accepted for PSMN4R2-80YSEX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R2-80YSEX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R2-80YSEX?

PSMN4R2-80YSEX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R2-80YSEX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R2-80YSEX?

For technical support, including PSMN4R2-80YSEX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R2-80YSEX requirements.

6.How does Aetrix verify that PSMN4R2-80YSEX is sourced from the original manufacturer or authorized distributors?

All PSMN4R2-80YSEX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R2-80YSEX meets industry standards.

7.What is the process for return or replacement of PSMN4R2-80YSEX?

All PSMN4R2-80YSEX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R2-80YSEX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R2-80YSEX part is unused and in its original packaging.

Return procedure for PSMN4R2-80YSEX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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