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Nexperia USA Inc. PSMN4R3-100ES,127

Name: PSMN4R3-100ES,127
Brand: Nexperia USA Inc.
SKU: PSMN4R3-100ES,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R3-100ES,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN4R3-100ES,127.pdf

Description:: MOSFET N-CH 100V 120A I2PAK

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Product details

Overview

PSMN4R3-100ES from Nexperia is a standard-level N-channel MOSFET in I2PAK (SOT226) package, rated for 100 V V_DS, 4.3 mΩ R_DS(on) at T_j = 25 °C and 25 A, 175 °C maximum junction temperature, and optimized for high-efficiency DC-to-DC converters and server power supplies.

For engineers reviewing the PSMN4R3-100ES datasheet, PSMN4R3-100ES pinout, PSMN4R3-100ES application, or PSMN4R3-100ES equivalent, this device supports standard 10 V gate drive, delivers 120 A continuous drain current at T_mb = 25 °C, and provides robust unclamped avalanche energy handling (537 mJ) - critical for hard-switching industrial power stages.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low R_DS(on) while maintaining ruggedness under repetitive and unclamped avalanche stress. Its gate threshold voltage (V_GS(th)) ranges from 1 V at 175 °C to 4.6 V at −55 °C, enabling stable turn-on across wide temperature extremes.

The device features integrated source-drain diode with 0.8–1.2 V forward voltage at 25 A and 75 ns reverse recovery time, supporting synchronous rectification and freewheeling in motor control and load switching topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage compatible with 48 V input bus systems and 12 V/24 V industrial rails with margin.
R_DS(on)	4.3 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 50 A, reducing thermal burden in compact power modules.
I_D (cont)	120 A @ T_mb = 25 °C - Supports high-current output stages in server VRMs and telecom rectifiers when mounted on heatsink.
Q_G(tot)	170 nC - Determines gate drive power requirement; enables efficient switching at ≤500 kHz with moderate gate driver ICs (e.g., UCC27531).
E_AS	537 mJ (unclamped) - Withstands single-pulse inductive energy spikes up to 120 A × 50 V × 89.5 µs, enhancing reliability in motor drive fault conditions.
R_th(j-mb)	0.22–0.44 K/W - Low thermal resistance from junction to mounting base allows direct heatsink attachment for >300 W dissipation capability.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures clean turn-on with standard logic-level or microcontroller GPIO-driven gate circuits.

Pinout & Package

I2PAK (SOT226) package: plastic single-ended 3-lead TO-262 outline with isolated mounting base electrically connected to drain (D). Requires mechanical clamping and thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 10 V standard-level drive; 0.9 Ω internal gate resistance limits ringing and simplifies snubber design.
2 (D)	Drain	Main high-side power terminal; electrically tied to mounting base - must be isolated from heatsink unless system ground reference permits.
3 (S)	Source	Power return path and reference for gate drive; low-inductance connection essential for minimizing switching overshoot in high-dI/dt applications.

Key Features

Feature	Design Value
Low R_DS(on) at 100 V rating	4.3 mΩ @ 25 °C enables higher efficiency than comparable 100 V MOSFETs in 48 V intermediate bus converters.
175 °C T_j qualification	Supports operation in sealed industrial enclosures and high-ambient server chassis without derating below full current.
Standard-level gate drive compatibility	Operates fully enhanced with 10 V V_GS, eliminating need for level-shifters or charge pumps in legacy 12 V gate drive architectures.
Robust unclamped avalanche capability	537 mJ E_AS exceeds JEDEC JESD24-11 requirements, allowing safe operation in inductive load switching without external clamping.
Integrated body diode with fast recovery	75 ns t_rr and 235 nC Q_r reduce switching losses in synchronous buck and half-bridge freewheeling paths.

Applications

Server Power Supplies

Industrial DC-to-DC Converters

Use Scenario: Primary-side switch in 48 V input, 12 V output VRM for CPU/GPU power delivery in data center servers.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in synchronous buck topology operating at 300–500 kHz.

Use Value: 4.3 mΩ R_DS(on) minimizes conduction loss at 100+ A loads, while 175 °C rating ensures reliability under sustained thermal stress in dense PCB layouts.

Use Scenario: Isolated forward converter primary switch in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Main switching transistor handling 40–60 A peak currents with 100 V bus tolerance.

Use Value: 537 mJ avalanche energy withstands transformer leakage inductance spikes during overcurrent events without failure.

Motor Control Inverters

High-Current Load Switching

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for automated guided vehicle (AGV) traction control.

IC Role / Device Role / Timing Role: Low-side switching element conducting 70 A RMS with PWM commutation at 20 kHz.

Use Value: 0.8–1.2 V V_SD and 75 ns t_rr of integrated body diode reduce dead-time losses and eliminate external freewheeling diodes.

Use Scenario: Hot-swap and battery disconnect switch in 48 V telecom backup power system.

IC Role / Device Role / Timing Role: Single-pole, high-current solid-state relay replacing mechanical contactors.

Use Value: 120 A continuous rating and 673 A pulsed current support rapid inrush limiting and fault isolation without contact wear or arcing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 4.2 mΩ @ 25 °C, but only rated to 150 °C T_j; lower Q_G (130 nC) enables faster switching.	Limited to lower ambient temperature environments; unsuitable for sealed 175 °C-rated industrial enclosures.	Select when prioritizing switching speed over thermal margin; verify heatsink design for 150 °C limit.
IRF540NPBF	100 V, 44 mΩ R_DS(on) - ~10× higher conduction loss; TO-220 package, no mounting base thermal path.	Acceptable only for low-duty-cycle, low-current (<15 A) applications where cost outweighs efficiency.	Avoid in high-power density designs; use only if legacy board space and thermal budget permit significant derating.

Compared with STP110N10F7 and IRF540NPBF, PSMN4R3-100ES uniquely combines 100 V rating, sub-5 mΩ R_DS(on), 175 °C operation, and I2PAK thermal performance - making it the sole option qualified for thermally constrained, high-reliability industrial and server power stages.

Availability

PSMN4R3-100ES is available at Aetrix Electronics and suitable for server power supplies, industrial DC-to-DC converters, and motor control inverters requiring stable component supply across multi-year production cycles.

Supply support for PSMN4R3-100ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's standard-level logic-compatible power MOSFET product line, engineered specifically for efficiency-critical industrial and communications power conversion where thermal resilience and avalanche ruggedness are mandatory.

FAQ

Is PSMN4R3-100ES suitable for gate drive with 5 V microcontrollers?

No - this is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At 5 V, R_DS(on) rises above 20 mΩ, causing excessive conduction loss. Use a gate driver IC (e.g., TC4427) or level shifter to ensure 10 V gate voltage under all operating conditions.

What is the maximum allowable mounting base temperature for continuous 120 A operation?

Per Figure 1 in the datasheet, 120 A continuous drain current is only guaranteed at T_mb = 25 °C. At T_mb = 100 °C, ID drops to ~70 A. For sustained high-current operation, active heatsinking or forced-air cooling is required to maintain T_mb ≤ 60 °C.

Does the mounting base require electrical isolation from the heatsink?

Yes - Pin 2 (D) and the mounting base are internally connected. If the drain node is not at system ground potential, the heatsink must be electrically insulated using mica or ceramic washers and non-conductive thermal paste to prevent short circuits.

Can PSMN4R3-100ES replace PSMN4R3-100PS in the same footprint?

No - although both share "PSMN4R3-100" prefix, the -100PS variant uses TO-220 package (SOT-223), while -100ES uses I2PAK (SOT226). The pinouts differ: TO-220 has G-D-S left-to-right; I2PAK has G-D-S with drain-connected mounting base. Mechanical and thermal redesign is required.

PSMN4R3-100ES,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 338W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN4R3-100ES,127 FAQ

1.How can I place an order for PSMN4R3-100ES,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R3-100ES,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R3-100ES,127 reliable?

The price and inventory of PSMN4R3-100ES,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R3-100ES,127 is usually 5 days.

3.What payment methods are accepted for PSMN4R3-100ES,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R3-100ES,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R3-100ES,127?

PSMN4R3-100ES,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R3-100ES,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R3-100ES,127?

For technical support, including PSMN4R3-100ES,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R3-100ES,127 requirements.

6.How does Aetrix verify that PSMN4R3-100ES,127 is sourced from the original manufacturer or authorized distributors?

All PSMN4R3-100ES,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R3-100ES,127 meets industry standards.

7.What is the process for return or replacement of PSMN4R3-100ES,127?

All PSMN4R3-100ES,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R3-100ES,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R3-100ES,127 part is unused and in its original packaging.

Return procedure for PSMN4R3-100ES,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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