Nexperia USA Inc. PSMN4R3-100PS,127

Overview

PSMN4R3-100PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB package, rated for 100 V drain-source voltage, 4.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 120 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in industrial DC-DC converters and server power supplies.

For engineers reviewing the PSMN4R3-100PS datasheet, PSMN4R3-100PS pinout, PSMN4R3-100PS application, or PSMN4R3-100PS equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, avalanche energy rating of 537 mJ, thermal resistance of 0.22 K/W (junction-to-mounting base), and compatibility with standard-level gate drivers in high-efficiency switching designs.

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and robust avalanche performance. Its gate threshold voltage ranges from 1 V at 175 °C to 4.6 V at −55 °C, enabling stable turn-on across wide temperature extremes while maintaining safe margin against spurious switching.

The device features a monolithic source-drain diode with 0.8–1.2 V forward voltage at 25 A and 25 °C, and 75 ns reverse recovery time under defined dI/dt conditions. Its dynamic characteristics-170 nC total gate charge and 49 nC gate-drain charge-support efficient hard-switching operation up to 100 V bus applications.

Key Specifications

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3 leads; mounting base electrically connected to drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STP110N10F7, PSMN4R3-100PS offers superior thermal endurance (175 °C vs. 150 °C) and higher avalanche energy (537 mJ vs. ~300 mJ), making it more suitable for harsh industrial motor drives; versus IRF1404ZPBF, its 100 V rating enables direct use in 48 V+ telecom and server power without series stacking.

Availability

PSMN4R3-100PS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN4R3-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive industrial and communications power conversion where 10 V gate drive compatibility and thermal ruggedness are essential.

FAQ

What is the maximum continuous drain current for PSMN4R3-100PS at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 75 A, per Figure 1 in the datasheet. This reflects thermal limitation of the TO-220AB package, not device degradation; the 120 A rating applies only at T_mb = 25 °C with adequate heatsinking.

Is PSMN4R3-100PS suitable for use with 5 V gate drive?

No-its V_GS(th) minimum is 1 V at 175 °C, but R_DS(on) rises sharply below 8 V. At V_GS = 5 V, R_DS(on) exceeds 15 mΩ (typical), increasing conduction loss by >250%. It requires ≥10 V gate drive for specified 4.3 mΩ performance.

Does the mounting base have electrical connectivity, and if so, to which terminal?

Yes-the mounting base (mb) is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 and Figure 18. This requires electrical isolation from heatsink unless drain is at system ground potential; insulating hardware must be used in high-side configurations.

What is the typical reverse recovery time of the integrated body diode?

The source-drain diode exhibits t_rr = 75 ns under test conditions of I_S = 25 A, dI/dt = −100 A/µs, V_DS = 50 V, and V_GS = 0 V. This value is measured at 25 °C and decreases slightly at elevated temperatures, supporting moderate-frequency freewheeling in synchronous rectifiers.