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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R3-30PL,127

Name: PSMN4R3-30PL,127
Brand: Nexperia USA Inc.
SKU: PSMN4R3-30PL,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R3-30PL,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN4R3-30PL,127.pdf

Description:: MOSFET N-CH 30V 100A TO220AB

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Product details

Overview

PSMN4R3-30PL from Nexperia is a logic-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 30 V V_DS, 4.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports low-loss switching in high-current DC-DC converters and server power supplies.

For engineers reviewing the PSMN4R3-30PL datasheet, PSMN4R3-30PL pinout, PSMN4R3-30PL application, or PSMN4R3-30PL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) typ. 1.7 V), thermal resistance R_th(j-mb) = 1.0 K/W, avalanche energy rating of 74 mJ, and mounting-base–referenced power dissipation limits.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining robust safe operating area (SOA) up to 100 A DC and 465 A pulsed. Its gate threshold voltage (V_GS(th)) ranges from 0.5 V at 175 °C to 2.45 V at –55 °C, enabling stable turn-on across industrial temperature extremes.

The device integrates a co-packaged body diode with 35 ns reverse recovery time and 30 nC recovered charge, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design centers on mounting-base–to–junction conduction, with R_th(j-mb) specified at 1.0 K/W typical and validated via transient impedance curves per Figure 4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines absolute upper limit for blocking capability in 24 V systems and 30 V bus applications.
R_DS(on)	4.3 mΩ max at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <1.5 W conduction loss at 60 A, critical for high-efficiency server VRMs.
I_D (cont.)	100 A at T_mb = 25 °C - specifies maximum steady-state current when heatsink maintains baseplate at 25 °C.
Q_G(tot)	41.5 nC typical at V_GS = 10 V - determines gate driver strength requirement; ~2.1 A peak needed for 20 ns rise time with 5.6 Ω external resistor.
R_th(j-mb)	1.0 K/W typical - quantifies thermal path efficiency from junction to heatsink interface; enables 103 W dissipation at 103 K ΔT above ambient.
E_AS	74 mJ non-repetitive avalanche energy - supports unclamped inductive switching events in motor control and relay drivers without failure.
V_GS(th)	1.3–2.15 V at T_j = 25 °C - ensures reliable turn-on with 3.3 V or 5 V logic-level controllers without level-shifting.

Pinout & Package

PSMN4R3-30PL uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and three leads. The mounting base (mb) is electrically connected to the drain terminal and serves as the primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤20 V gate-source voltage; low input capacitance (C_iss = 2400 pF) eases driving.
2 (D) / mb	Drain + Mounting Base	Main high-side current path and thermal conduction surface; must be isolated from PCB ground unless circuit topology permits.
3 (S)	Source	Reference node for gate drive and current sensing; connects to load return or low-side switch node.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) max 2.15 V at 25 °C enables direct interfacing with 3.3 V/5 V microcontrollers and PWM controllers without gate drivers.
High-temperature qualification	Rated for 175 °C junction operation - supports deployment in sealed enclosures, high-ambient server racks, and industrial motor drives.
Low R_DS(on) × Q_G figure of merit	4.3 mΩ × 41.5 nC = 178.5 mΩ·nC - balances conduction and switching losses for high-frequency (>100 kHz) power conversion stages.
Robust avalanche ruggedness	74 mJ E_AS at T_j = 25 °C - withstands inductive kickback in solenoid drivers and H-bridge motor control without snubbers.
Integrated source-drain diode	35 ns t_rr, 30 nC Q_r - reduces need for external freewheeling diodes in buck converters and half-bridge configurations.

Applications

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V intermediate bus converters.

IC Role / Device Role / Timing Role: High-side power switch handling up to 80 A continuous current with minimal conduction loss.

Use Value: 4.3 mΩ R_DS(on) reduces conduction loss by >35% versus 6.5 mΩ alternatives at 60 A, improving system efficiency by 0.8% at full load.

Use Scenario: 12 V VRM high-side switch in dual-phase CPU power delivery networks.

IC Role / Device Role / Timing Role: Fast-switching power FET with 28 ns t_d(on) and 21 ns t_f supporting 500 kHz+ switching frequencies.

Use Value: 41.5 nC Q_G(tot) allows clean gate transitions using standard 2 A peak drivers, reducing layout complexity vs. higher-Q_G devices.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V brushed DC motor drivers for industrial actuators.

IC Role / Device Role / Timing Role: Low-threshold N-channel switch controlled directly by MCU GPIO pins.

Use Value: 1.7 V typical V_GS(th) ensures full enhancement at 3.3 V logic levels, eliminating need for charge pumps or level shifters.

Use Scenario: Hot-swap and inrush current limiting in telecom line cards and storage backplanes.

IC Role / Device Role / Timing Role: High-current load switch with integrated avalanche protection for fault transients.

Use Value: 74 mJ E_AS rating handles 100 A inductive turn-off events without derating, simplifying protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V; Q_G = 71 nC; TO-220 package; not qualified to 175 °C.	Higher conduction loss and slower switching; suitable only for <100 kHz, <60 A applications.	Choose only if cost sensitivity outweighs efficiency and thermal margin requirements.
STP40NF3L	R_DS(on) = 4.5 mΩ @ 10 V; Q_G = 45 nC; 30 V rating; but V_GS(th) min = 1.0 V, max = 2.5 V - wider threshold spread.	Less predictable turn-on behavior at low V_GS; may require tighter gate drive tolerance in 3.3 V systems.	Preferable where gate drive voltage margin is ≥1.5 V above V_GS(th) max; avoid in marginal 3.3 V logic designs.

Compared with IRF3205PBF and STP40NF3L, PSMN4R3-30PL offers superior thermal robustness (175 °C rating), tighter V_GS(th) distribution (1.3–2.15 V), and lower R_DS(on) × Q_G product-making it optimal for high-density, high-efficiency, and high-temperature industrial power stages.

Availability

PSMN4R3-30PL is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, DC-DC converters, and hot-swap load switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN4R3-30PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD-protected components.

This device belongs to Nexperia's logic-level Power MOSFET portfolio, engineered for high-efficiency, thermally demanding power conversion in industrial, computing, and communications infrastructure.

FAQ

What is the maximum continuous drain current for PSMN4R3-30PL at 100 °C mounting base temperature?

The datasheet specifies 80 A continuous drain current at T_mb = 100 °C and V_GS = 10 V (Table 4). This reflects thermal derating due to reduced heat transfer efficiency at elevated baseplate temperatures, and aligns with the normalized power dissipation curve in Figure 2.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base (mb) is internally connected to the drain terminal, as confirmed in Table 2 ("mb D mounting base; connected to drain") and Figure 18 package outline. Electrical isolation requires insulating hardware (e.g., shoulder washers, silicone pads) when mounting to a grounded heatsink.

Can PSMN4R3-30PL be used with 3.3 V microcontroller GPIOs without a gate driver?

Yes-its V_GS(th) range (1.3–2.15 V at 25 °C) ensures full enhancement at 3.3 V, and R_DS(on) remains ≤6.2 mΩ even at V_GS = 4.5 V (Table 6). However, switching speed will be reduced versus 10 V drive due to lower gate charge injection rate.

What is the safe operating area (SOA) limitation at 10 µs pulse width and 20 V V_DS?

Per Figure 3, the SOA supports 100 A at V_DS = 20 V for DC operation, and scales to ~400 A for 10 µs pulses. At exactly 10 µs and 20 V, the limit is approximately 350 A, bounded by the 10 µs curve intersecting the 20 V horizontal line-well within the 465 A peak drain current rating.

PSMN4R3-30PL,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 41.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 103W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN4R3-30PL,127 FAQ

1.How can I place an order for PSMN4R3-30PL,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R3-30PL,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R3-30PL,127 reliable?

The price and inventory of PSMN4R3-30PL,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R3-30PL,127 is usually 5 days.

3.What payment methods are accepted for PSMN4R3-30PL,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R3-30PL,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R3-30PL,127?

PSMN4R3-30PL,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R3-30PL,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R3-30PL,127?

For technical support, including PSMN4R3-30PL,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R3-30PL,127 requirements.

6.How does Aetrix verify that PSMN4R3-30PL,127 is sourced from the original manufacturer or authorized distributors?

All PSMN4R3-30PL,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R3-30PL,127 meets industry standards.

7.What is the process for return or replacement of PSMN4R3-30PL,127?

All PSMN4R3-30PL,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R3-30PL,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R3-30PL,127 part is unused and in its original packaging.

Return procedure for PSMN4R3-30PL,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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