Nexperia USA Inc. PSMN4R3-40MLHX

Overview

PSMN4R3-40MLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 40 V V_DS, 4.3 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 95 A continuous drain current at T_mb = 25 °C. It delivers high-efficiency synchronous rectification in DC-DC converters operating at high switching frequencies up to several hundred kHz.

For engineers reviewing the PSMN4R3-40MLHX datasheet, PSMN4R3-40MLHX pinout, PSMN4R3-40MLHX application, or PSMN4R3-40MLHX equivalent, key selection criteria include its 1.48 K/W junction-to-mounting-base thermal resistance, 3.3 nC Q_GD, soft-recovery body diode, avalanche ruggedness (99 mJ), and LFPAK33 clip-bonded construction qualified to 175 °C.

Technical Context

This MOSFET employs Nexperia's NextPower-S3 TrenchMOS Superjunction technology, enabling superfast switching with low Q_G (14 nC typ @ 4.5 V), low Q_GD (3.3 nC typ), and minimized ringing due to low parasitic inductance. Its gate threshold voltage is 1.77 V typ, supporting direct drive from 3.3 V and 5 V logic controllers.

The device integrates an optimized source-drain diode with 26 ns t_rr and 20 nC Q_r, enabling efficient hard-switched and resonant topologies. The mounting base (Pin mb) is electrically connected to the drain, while Pins 1–3 are internally shorted source terminals - a configuration validated for high-current PCB layout with low-inductance return paths.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, solder-die-attached surface-mount package with exposed copper leads for wave soldering, visual inspection, and low thermal resistance. It features no wire bonds or adhesive, achieving 175 °C junction rating and high reliability in automotive and industrial environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V logic-level MOSFET applications.

Compared with BSC028N06NS3 and SiR626DP, PSMN4R3-40MLHX offers superior thermal performance (1.48 K/W vs. ≥2.5 K/W), guaranteed avalanche energy, and LFPAK33 mechanical robustness - making it optimal for high-reliability, high-current 40 V synchronous rectification where mounting base thermal coupling is feasible.

Availability

PSMN4R3-40MLHX is available at Aetrix Electronics and suitable for secondary side synchronous rectification, high-frequency DC-DC converters, and brushless DC motor drive applications requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability.

Supply support for PSMN4R3-40MLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors for automotive, industrial, and consumer applications, with leadership in MOSFETs, logic, and ESD protection devices.

This device belongs to Nexperia's NextPower-S3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained and thermally demanding environments.

FAQ

What is the maximum continuous drain current for PSMN4R3-40MLHX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 69 A, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the PCB copper area and ambient conditions-not device failure-but ensures safe operation within the 175 °C junction limit.

Can PSMN4R3-40MLHX be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes - its V_GS(th) is 1.45–2.15 V, and R_DS(on) remains 4.4–5.5 mΩ at V_GS = 4.5 V, enabling partial enhancement. However, full 95 A capability requires ≥10 V gate drive; for high-current or high-frequency use, a dedicated gate driver is recommended to ensure fast turn-on and minimize switching losses.

How does the LFPAK33 package improve thermal performance compared to standard SO-8?

LFPAK33 replaces wire bonds with clip bonding and uses solder die attach, reducing R_th(j-mb) to 1.48 K/W - nearly 50% lower than typical SO-8 MOSFETs (~2.5–3.0 K/W). Its exposed mounting base provides a direct thermal path to the PCB, enabling higher power density and improved reliability under thermal cycling.

Is PSMN4R3-40MLHX qualified for automotive applications?

Yes - it is AEC-Q101 qualified and rated for operation from −55 °C to +175 °C junction temperature. Its 100% avalanche testing, clip-bonded construction, and absence of organic adhesives meet automotive reliability requirements for engine control, ADAS power supplies, and body electronics.