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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R3-40MSHX

Name: PSMN4R3-40MSHX
Brand: Nexperia USA Inc.
SKU: PSMN4R3-40MSHX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R3-40MSHX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN4R3-40MSHX.pdf

Description:: MOSFET N-CH 40V 95A LFPAK33

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Product details

Overview

PSMN4R3-40MSHX from Nexperia is a standard-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 40 V V_DS, 4.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 95 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 TrenchMOS Superjunction technology and is qualified to 175 °C junction temperature for high-efficiency, high-frequency switching in secondary-side synchronous rectification.

For engineers reviewing the PSMN4R3-40MSHX datasheet, PSMN4R3-40MSHX pinout, PSMN4R3-40MSHX application, or PSMN4R3-40MSHX equivalent, this device offers verified avalanche ruggedness (99 mJ), low Q_GD (3.6 nC typ), soft body-diode recovery (t_rr = 26 ns), and clip-bonded die construction enabling wave soldering and visual joint inspection.

Technical Context

This MOSFET uses advanced TrenchMOS Superjunction architecture with optimized charge distribution to achieve ultra-low R_DS(on) × Q_G product-3.5 mΩ typical R_DS(on) at 25 °C and 23 nC total gate charge-enabling high system efficiency above 500 kHz switching frequencies. Its integrated source-drain diode exhibits 0.83 V forward voltage at 25 A and 25 °C, with controlled reverse recovery (Q_r = 20 nC, t_a = 16 ns).

The LFPAK33 package features an exposed mounting base connected to drain, three parallel source terminals, and a single gate terminal-eliminating wire bonds and glue for reduced parasitic inductance (1.48 K/W R_th(j-mb)) and enhanced thermal reliability under pulsed load conditions up to 392 A peak drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage-supports 36 V nominal bus systems with 10% margin for transients.
R_DS(on)	4.3 mΩ max at V_GS = 10 V, I_D = 25 A, T_j = 25 °C-enables <1 W conduction loss at 50 A DC.
I_D (cont)	95 A at T_mb = 25 °C-validated continuous current under application test conditions with proper PCB copper area.
Q_GD	3.6 nC typical gate-drain charge-minimizes Miller-induced switching delay and dv/dt-induced turn-on risk.
t_rr	26 ns reverse recovery time-reduces switching losses and EMI in hard-commutated synchronous rectifiers.
E_AS	132 mJ non-repetitive avalanche energy-provides robustness against inductive load transients without external snubbers.
R_th(j-mb)	1.48 K/W typical thermal resistance junction-to-mounting base-enables >70 W power dissipation with 100 °C ΔT.

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, lead-frame-based surface-mount package with exposed drain mounting base, no wire bonds or die attach adhesive, and qualified to 175 °C operation. Its compact 3.2 mm × 2.4 mm footprint supports wave soldering and automated optical inspection of solder joints.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source connections-reduce common-source inductance and improve paralleling stability.
4	Gate (G)	Single gate input with 0.8 Ω typical gate resistance-compatible with standard 5–10 V gate drivers without external series resistance.
Mounting Base	Drain (D)	Exposed copper pad electrically and thermally connected to drain-serves as primary heat path and high-current return node.

Key Features

Feature	Design Value
Avalanche rated, 100% tested	Guarantees 132 mJ E_AS and 70 A I_AS capability-enables reliable operation in unclamped inductive switching.
NextPower-S3 superfast switching	Combines 4.3 mΩ R_DS(on) with 23 nC Q_G(tot) and 3.6 nC Q_GD-optimizes trade-off between conduction and switching loss at >300 kHz.
Soft body-diode recovery	t_a/t_b ratio of 16 ns / 10 ns and Q_r = 20 nC-suppresses voltage spikes and reduces EMI in synchronous rectifier topologies.
Low parasitic inductance/resistance	Clip-bonded construction eliminates wire bonds and die attach glue-reduces L_source by >50% vs SO-8 equivalents.
Wave-solderable exposed leads	Three source pins and mounting base support full-process wave soldering with AOI-verified joints-reduces assembly cost and defect rate.

Applications

Secondary Side Synchronous Rectification

DC-to-DC Converters

Use Scenario: Used as low-side switch in isolated LLC or phase-shifted full-bridge converters delivering 12–24 V output at >1 kW.

IC Role / Device Role / Timing Role: Replaces Schottky diode on secondary side to reduce conduction loss and enable zero-voltage switching (ZVS) extension.

Use Value: Achieves >98% efficiency at 500 kHz with 4.3 mΩ R_DS(on) and soft diode recovery minimizing shoot-through risk during dead-time transitions.

Use Scenario: High-current buck converter stage in telecom power supplies converting 48 V input to 3.3/5/12 V outputs.

IC Role / Device Role / Timing Role: Power switch in high-side or low-side position with gate drive synchronized to PWM controller timing.

Use Value: Delivers 95 A continuous current with 1.48 K/W R_th(j-mb) enabling compact heatsink-free designs on 2 oz copper PCBs.

Brushless DC Motor Drive

LED Lighting

Use Scenario: Half-bridge leg in 3-phase BLDC inverter driving 200–500 W fans or pumps with trapezoidal commutation.

IC Role / Device Role / Timing Role: Low-side switching element handling 60–80 A peak phase current at 20–50 kHz PWM frequency.

Use Value: Avalanche rating and 175 °C qualification ensure robustness against back-EMF transients and motor stall conditions.

Use Scenario: Constant-current switch in high-bay LED drivers operating from 300 V DC bus derived from PFC stage.

IC Role / Device Role / Timing Role: Primary switching transistor in flyback or buck-boost topology regulating LED string current.

Use Value: Low Q_G/Q_GD enables clean turn-on/turn-off edges reducing audible noise and EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N04L	4.0 mΩ R_DS(on) but higher Q_G (34 nC) and no 100% avalanche test; TO-252 package.	Larger footprint and higher thermal resistance (R_th(j-a) ≈ 50 K/W vs 130 K/W for PSMN4R3-40MSHX on same board).	Prefer when absolute lowest R_DS(on) dominates over switching loss and board space is unconstrained.
Vishay SiR462DP	4.7 mΩ R_DS(on), lower Q_GD (2.9 nC), but only 150 °C T_j rating and no avalanche energy spec.	Less suitable for automotive or industrial environments requiring 175 °C operation or unclamped inductive loads.	Prefer where soft switching and EMI control are critical, and ambient temperature stays below 125 °C.

Compared with IPP040N04L and SiR462DP, PSMN4R3-40MSHX uniquely combines 175 °C qualification, 100% avalanche testing, and LFPAK33's low-inductance clip-bonded construction-making it optimal for space-constrained, high-reliability synchronous rectification where thermal and transient robustness are non-negotiable.

Availability

PSMN4R3-40MSHX is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-frequency DC-to-DC conversion, and brushless DC motor drive applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN4R3-40MSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's NextPower-S3 portfolio-engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial power supplies where low R_DS(on), fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for PSMN4R3-40MSHX?

The datasheet specifies 95 A continuous drain current at mounting base temperature T_mb = 25 °C, validated under application test conditions. In practice, actual current is limited by PCB copper area, thermal interface, and ambient temperature-designs targeting >60 A should use ≥25.4 mm × 25.4 mm 70 µm copper pads per the recommended layout in Figure 5.

Does PSMN4R3-40MSHX support wave soldering?

Yes-the LFPAK33 package has exposed source leads and a drain mounting base designed for wave soldering. The absence of wire bonds and glue allows full-process wave soldering with visual solder joint inspection, and the package is qualified to withstand peak soldering temperatures up to 260 °C per JEDEC J-STD-020.

How does the body diode performance compare to standard MOSFETs?

Its body diode delivers soft reverse recovery with t_rr = 26 ns, Q_r = 20 nC, and V_SD = 0.83 V at 25 A/25 °C-significantly faster and lower-loss than standard trench MOSFETs. This reduces switching losses and EMI in synchronous rectifier applications where the diode conducts during dead time.

Is PSMN4R3-40MSHX qualified for automotive applications?

While not AEC-Q101 certified, this part is qualified to 175 °C junction temperature and 100% avalanche-tested-meeting key reliability requirements for under-hood industrial and telecom applications. For automotive safety-critical systems, consult Nexperia's AEC-Q101-qualified variants such as PSMN4R3-40MLH.

PSMN4R3-40MSHX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2338 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN4R3-40MSHX FAQ

1.How can I place an order for PSMN4R3-40MSHX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R3-40MSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R3-40MSHX reliable?

The price and inventory of PSMN4R3-40MSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R3-40MSHX is usually 5 days.

3.What payment methods are accepted for PSMN4R3-40MSHX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R3-40MSHX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R3-40MSHX?

PSMN4R3-40MSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R3-40MSHX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R3-40MSHX?

For technical support, including PSMN4R3-40MSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R3-40MSHX requirements.

6.How does Aetrix verify that PSMN4R3-40MSHX is sourced from the original manufacturer or authorized distributors?

All PSMN4R3-40MSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R3-40MSHX meets industry standards.

7.What is the process for return or replacement of PSMN4R3-40MSHX?

All PSMN4R3-40MSHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R3-40MSHX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R3-40MSHX part is unused and in its original packaging.

Return procedure for PSMN4R3-40MSHX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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