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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R3-80ES,127

Name: PSMN4R3-80ES,127
Brand: Nexperia USA Inc.
SKU: PSMN4R3-80ES,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R3-80ES,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN4R3-80ES,127.pdf

Description:: MOSFET N-CH 80V 120A I2PAK

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Product details

Overview

PSMN4R3-80ES from Nexperia is an N-channel standard-level power MOSFET in I2PAK (SOT226) package, rated for 80 V V_DS, 4.3 mΩ R_DS(on) at 10 V V_GS and 25 °C, 120 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current switching element in DC-DC converters, server power supplies, motor control, and load-switching applications where low conduction loss and robust avalanche capability are required.

For engineers reviewing the PSMN4R3-80ES datasheet, PSMN4R3-80ES pinout, PSMN4R3-80ES application, or PSMN4R3-80ES equivalent, this page delivers verified electrical parameters, thermal resistance (R_th(j-mb) = 0.22–0.49 K/W), gate charge profile (Q_G(tot) = 111 nC), avalanche energy (E_AS = 676 mJ), and real-world use context for industrial and communications power systems.

Technical Context

This MOSFET employs a planar trench-gated silicon structure optimized for standard-level gate drive (10 V), delivering low R_DS(on) across wide temperature range (3.7 mΩ typ at 25 °C; 8.9 mΩ typ at 175 °C). Its dynamic characteristics include Q_GD = 28 nC and C_iss = 8161 pF at V_DS = 40 V, supporting efficient hard-switching operation up to 100 kHz in synchronous buck topologies.

The device integrates a robust body diode with V_SD = 0.8–1.2 V at 25 A and t_rr = 59 ns, enabling reliable freewheeling in inductive loads. Thermal design is anchored by its low junction-to-mounting-base resistance (0.22 K/W typ), allowing direct heatsink mounting without isolation pads in high-power industrial SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V input bus architectures and 60 V transient clamping.
R_DS(on)	4.3 mΩ max at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables ≤0.27 W conduction loss at 80 A, critical for high-efficiency server VRMs.
I_D (continuous)	120 A at T_mb = 25 °C - Supports high-current single-phase output stages without paralleling.
Q_G(tot)	111 nC - Determines gate driver power requirement (~1.1 mW per MHz at 10 V drive) and switching speed trade-off.
E_AS	676 mJ - Withstands unclamped inductive turn-off events in motor drives and relay snubbers without failure.
R_th(j-mb)	0.22 K/W typ - Allows 175 °C T_j operation with ≤35 °C temperature rise at 100 W dissipation on copper heatsink.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V logic-level controllers while avoiding spurious conduction.

Pinout & Package

The PSMN4R3-80ES uses the I2PAK (SOT226) plastic single-ended package, featuring a large metal mounting base for low thermal resistance and mechanical stability. Pin 1 is Gate (G), Pin 2 is Drain (D), and Pin 3 is Source (S); the drain connects directly to the exposed metal tab for optimal heat transfer and high-current path integrity.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate terminal	Controls channel conduction; requires <111 nC charge for full enhancement; sensitive to ESD (±20 V absolute max).
2 (D)	Drain terminal / Mounting base	High-current output node; electrically connected to exposed metal tab-must be isolated from heatsink unless referenced to same potential.
3 (S)	Source terminal	Reference node for gate drive; carries full load current; forms return path for body diode freewheeling.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V, eliminating need for level-shifters or bootstrap circuits in 12 V/15 V supply rails.
Low R_DS(on) × Q_G figure of merit	4.3 mΩ × 111 nC = 477 mΩ·nC - Balances conduction and switching losses for high-frequency (>50 kHz) power conversion.
Avalanche-rated operation	Guaranteed 676 mJ non-repetitive E_AS enables robustness against inductive kickback in motor H-bridges and solenoid drivers.
175 °C junction rating	Supports operation in sealed industrial enclosures or high-ambient environments without derating below 120 A.
Optimized body diode	t_rr = 59 ns and Q_r = 109 nC reduce reverse recovery loss and EMI in synchronous rectification and bidirectional switches.

Applications

DC-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V–12 V isolated LLC resonant converter for AI accelerator racks.

IC Role / Device Role / Timing Role: High-side switching element handling 100 A peak currents at 300 kHz switching frequency with zero-voltage switching assist.

Use Value: 4.3 mΩ R_DS(on) minimizes conduction loss under high DC bias, while 111 nC Q_G enables precise timing control of resonant transitions.

Use Scenario: Synchronous rectifier in 12 V output stage of multi-phase VRM powering CPU/GPU.

IC Role / Device Role / Timing Role: Low-side switch operating in hard-switched mode with gate drive synchronized to controller PWM signals.

Use Value: 0.8–1.2 V V_SD and 59 ns t_rr reduce body-diode conduction loss and ringing during dead-time intervals.

Motor Control

Load Switch

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial pumps and HVAC fans.

IC Role / Device Role / Timing Role: High-current switching node subjected to repetitive inductive flyback and PWM commutation at 20 kHz.

Use Value: 676 mJ E_AS withstands unclamped inductive energy during fault conditions, improving system reliability without external snubbers.

Use Scenario: Hot-swap protection switch in telecom line card power distribution.

IC Role / Device Role / Timing Role: Main power path FET controlling 80 A inrush-limited startup and steady-state delivery.

Use Value: 120 A continuous rating and 0.22 K/W R_th(j-mb) enable compact thermal design with minimal heatsink mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ (typ), Q_G = 131 nC, R_th(j-mb) = 0.45 K/W, TO-220AB package	Higher gate charge increases driver loss; larger thermal resistance limits power density	Prefer when legacy TO-220 footprint is mandatory and switching frequency < 100 kHz.
STP80NF55-08	R_DS(on) = 8.0 mΩ (max), Q_G = 120 nC, T_j = 175 °C, TO-220FP package	Higher on-resistance increases conduction loss by ~85 %; smaller package reduces thermal margin	Select only if cost sensitivity outweighs efficiency and thermal performance requirements.

Compared with IRF1404PBF and STP80NF55-08, PSMN4R3-80ES delivers superior thermal performance (0.22 K/W vs ≥0.45 K/W), lower gate charge (111 nC vs ≥120 nC), and identical 80 V rating-making it optimal for space-constrained, high-efficiency industrial power stages requiring sustained 100+ A operation.

Availability

PSMN4R3-80ES is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for PSMN4R3-80ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

The PSMN4R3-80ES belongs to Nexperia's standard-level power MOSFET product line, engineered for high-current, high-temperature industrial and communications power conversion where efficiency, ruggedness, and thermal manageability are critical.

FAQ

What is the maximum continuous drain current for PSMN4R3-80ES at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 75 A, based on Figure 1 in the datasheet showing ID vs. T_mb with V_GS = 10 V. This reflects thermal limitation-not electrical-due to reduced heat dissipation capacity at elevated ambient temperatures.

Can PSMN4R3-80ES be driven directly from a 5 V microcontroller GPIO?

No-its V_GS(th) range is 2–4 V, but full enhancement requires V_GS ≥ 10 V for R_DS(on) ≤ 4.3 mΩ. Driving from 5 V yields high R_DS(on) (>20 mΩ), excessive conduction loss, and thermal instability. A dedicated gate driver or level-shifter is mandatory.

Is the I2PAK package lead-free and RoHS-compliant?

Yes-the PSMN4R3-80ES is manufactured in a lead-free, RoHS-compliant I2PAK (SOT226) package, with peak soldering temperature rated at 260 °C per J-STD-020, and compliant with EU Directive 2011/65/EU and China RoHS.

Does the body diode support synchronous rectification in buck converters?

It supports forced-commutated synchronous rectification but is not optimized for ultra-low Q_r. With t_rr = 59 ns and Q_r = 109 nC, it introduces measurable reverse recovery loss at >200 kHz. For best efficiency above 300 kHz, a dedicated low-Q_r MOSFET or Schottky-assisted topology is recommended.

PSMN4R3-80ES,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 111 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8161 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN4R3-80ES,127 FAQ

1.How can I place an order for PSMN4R3-80ES,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R3-80ES,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R3-80ES,127 reliable?

The price and inventory of PSMN4R3-80ES,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R3-80ES,127 is usually 5 days.

3.What payment methods are accepted for PSMN4R3-80ES,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R3-80ES,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R3-80ES,127?

PSMN4R3-80ES,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R3-80ES,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R3-80ES,127?

For technical support, including PSMN4R3-80ES,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R3-80ES,127 requirements.

6.How does Aetrix verify that PSMN4R3-80ES,127 is sourced from the original manufacturer or authorized distributors?

All PSMN4R3-80ES,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R3-80ES,127 meets industry standards.

7.What is the process for return or replacement of PSMN4R3-80ES,127?

All PSMN4R3-80ES,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R3-80ES,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R3-80ES,127 part is unused and in its original packaging.

Return procedure for PSMN4R3-80ES,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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