Nexperia USA Inc. PSMN4R4-30MLC,115

Overview

PSMN4R4-30MLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK33 (SOT1210) package, rated for 30 V V_DS, 4.65 mΩ R_DS(on) at V_GS = 10 V and 25 A, with ultra-low Q_G (10.6 nC @ 4.5 V) and optimized for 4.5 V gate drive in high-efficiency DC-DC converters and synchronous buck regulators.

For engineers reviewing the PSMN4R4-30MLC datasheet, PSMN4R4-30MLC pinout, PSMN4R4-30MLC application, or PSMN4R4-30MLC equivalent, this device delivers verified low R_DS(on) at logic-level gate voltage, robust avalanche energy (28.6 mJ), and thermal resistance of 1.95 K/W (junction-to-mounting base), critical for compact power stage design and thermal management in industrial and communications equipment.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction technology to achieve ultra-low gate charge (Q_G(tot) = 10.6 nC @ 4.5 V, Q_GD = 2.9 nC) and minimized output charge (Q_OSS = 9.8 nC), enabling fast switching with reduced switching losses in hard-switched topologies. Its 30 V V_DS rating and 70 A continuous drain current (T_mb = 25 °C) support high-current load switching applications.

The device features a source-connected triple-pin configuration (Pins 1–3) and drain-connected mounting base (Pin 4 + mb), delivering low parasitic inductance and resistance. Its gate threshold voltage (V_GS(th) = 1.45–2.15 V) and stable R_DS(on) over temperature (10.2 mΩ @ 150 °C, V_GS = 4.5 V) ensure reliable turn-on across wide operating conditions.

Key Specifications

Pinout & Package

Package: LFPAK33 (SOT1210), plastic single-ended surface-mount package with exposed drain-connected mounting base for enhanced thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLHS6342TRPBF and DMTH3004LPSQ-13, PSMN4R4-30MLC offers superior thermal performance (1.95 K/W vs. >3.5 K/W), lower Q_GD (2.9 nC vs. ≥4.1 nC), and triple-source layout-making it optimal for high-current, high-frequency synchronous buck and industrial load switching where thermal headroom and switching fidelity are critical.

Availability

PSMN4R4-30MLC is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and 24 V/48 V load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN4R4-30MLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This part belongs to Nexperia's NextPower Superjunction logic-level MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in industrial, communications, and computing infrastructure where low gate charge and thermal performance are decisive.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 10 V, the maximum continuous drain current is 64 A per the Limiting Values table. This reflects thermal derating due to reduced power dissipation capability at elevated temperatures, with the 69 W P_tot limit scaling inversely with mounting base temperature.

Does PSMN4R4-30MLC have an integrated body diode, and what is its reverse recovery performance?

Yes, it includes a monolithic source-drain body diode with V_SD = 0.82 V (typ.) at I_S = 25 A and T_j = 25 °C. Its reverse recovery time t_rr is 18.3 ns (typ.) at dI_S/dt = −100 A/µs, and recovered charge Q_r is 11 nC, enabling efficient synchronous rectification without external Schottky diodes.

Can this MOSFET be used with 3.3 V microcontroller GPIOs without a gate driver?

No-while V_GS(th) starts at 1.45 V, full enhancement requires ≥4.5 V for R_DS(on) ≤6 mΩ. At 3.3 V, R_DS(on) rises significantly (>15 mΩ), increasing conduction loss beyond acceptable levels; a 3.3 V–compatible gate driver or level shifter is required for reliable operation.

What is the significance of the mounting base (mb) being connected to the drain?

The mounting base is electrically tied to the drain and serves as the primary thermal and current path. This design minimizes thermal resistance (1.95 K/W) and reduces package inductance, but mandates isolation of the heatsink from other circuit potentials unless drain-referenced cooling is intentional in the system layout.