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Nexperia USA Inc. PSMN4R4-80BS,118

Name: PSMN4R4-80BS,118
Brand: Nexperia USA Inc.
SKU: PSMN4R4-80BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R4-80BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN4R4-80BS,118.pdf

Description:: MOSFET N-CH 80V 100A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN4R4-80BS from Nexperia is an N-channel standard-level power MOSFET in D2PAK (SOT404) package, rated for 80 V V_DS, 4.5 mΩ R_DS(on) at T_j = 25 °C and 100 A continuous drain current at T_mb = 25 °C. It operates up to 175 °C junction temperature and delivers high efficiency in high-current switching applications such as server power supplies and motor control.

For engineers reviewing the PSMN4R4-80BS datasheet, PSMN4R4-80BS pinout, PSMN4R4-80BS application, or PSMN4R4-80BS equivalent, this device is selected for its low conduction loss, robust avalanche energy rating (591 mJ), and compatibility with standard 10 V gate drive sources in industrial DC–DC and load-switching designs.

Technical Context

This MOSFET uses a planar silicon process optimized for low R_DS(on) and controlled dynamic characteristics. Its gate threshold voltage (2–4 V typ.) ensures reliable turn-on with standard logic-level drivers, while its 125 nC total gate charge supports efficient hard-switching operation at moderate frequencies.

The device features an integrated source-drain diode with 0.8–1.2 V forward voltage and 59 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage before breakdown; defines use in ≤48 V input systems with margin.
R_DS(on)	4.5 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.1 W conduction loss at 50 A, critical for thermal management in compact power stages.
I_D (cont)	100 A @ T_mb = 25 °C - Sustains high-current loads when mounted on adequately sized copper heatsinks or PCB thermal pads.
E_AS	591 mJ (unclamped) - Withstands single-pulse inductive energy spikes in motor commutation or relay snubbing without failure.
Q_G(tot)	125 nC - Determines gate driver power requirement and switching speed; enables ~100 kHz operation with 1.5 Ω external gate resistor.
R_th(j-mb)	0.23–0.49 K/W - Low thermal resistance from junction to mounting base allows direct thermal coupling to heatsink for high-power density designs.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures full enhancement with standard 5 V or 10 V gate drivers; stable over -55 to 175 °C range.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); thermally enhanced for high-power dissipation via mounting base.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 10 V standard-level drive; internal gate resistance of 1 Ω limits ringing and simplifies layout.
2	Drain (D)	Main high-side current path; electrically connected to mounting base; requires isolation from heatsink unless referenced to system ground.
3	Source (S)	Power return node; forms common reference for gate drive and current sensing; low-inductance connection critical for EMI control.

Key Features

Feature	Design Value
Low R_DS(on)	4.5 mΩ at 25 °C enables <1.2 W conduction loss at 50 A, reducing heatsink size and improving system efficiency.
High avalanche ruggedness	591 mJ non-repetitive energy rating protects against inductive kickback in motor and relay switching without external clamping.
175 °C rated junction temperature	Supports operation in harsh environments (e.g., server chassis, industrial enclosures) without derating at ambient up to 105 °C.
Standard-level gate drive	Turns fully on with 10 V V_GS; eliminates need for level-shifting or bootstrap circuitry in mid-voltage DC–DC and load-switch applications.
Integrated body diode	0.8–1.2 V V_SD and 59 ns t_rr enable reliable freewheeling in half-bridge topologies with minimal reverse recovery loss.

Applications

Server Power Supplies

DC–DC Converters

Use Scenario: Primary-side synchronous rectification and secondary-side high-current output switches in 48 V input telecom/server PSUs.

IC Role / Device Role / Timing Role: High-side and low-side power switch in multiphase buck converters delivering >100 A to CPU/GPU rails.

Use Value: 4.5 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 6 mΩ devices, directly improving 12 V rail efficiency at full load.

Use Scenario: Step-down conversion from 24 V or 48 V bus to 3.3 V/5 V/12 V rails in industrial PLCs and networking gear.

IC Role / Device Role / Timing Role: Main switching FET in fixed-frequency synchronous buck regulators operating at 200–500 kHz.

Use Value: 125 nC Q_G(tot) and 25 nC Q_GD support fast, low-loss transitions with minimal gate drive power overhead.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24–48 V brushed DC or BLDC motor drivers for HVAC actuators and robotic joints.

IC Role / Device Role / Timing Role: High-current switching element handling bidirectional PWM current up to 100 A peak.

Use Value: 591 mJ avalanche energy rating absorbs back-EMF transients during abrupt motor stop or direction reversal without failure.

Use Scenario: Hot-swap and inrush current limiting in industrial I/O modules and battery backup systems.

IC Role / Device Role / Timing Role: Single-FET high-side load switch controlling 24–48 V distribution to downstream subsystems.

Use Value: 80 V V_DS rating provides 2× margin over 48 V nominal bus, ensuring reliability during line surges and load dumps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.7 mΩ @ 10 V, but higher Q_G(tot) = 131 nC and lower T_j(max) = 175 °C (same), no specified avalanche rating.	Suitable for cost-sensitive industrial motor drives where gate drive strength exceeds 1 A, but less robust under unclamped inductive stress.	Select if gate driver can handle higher charge and avalanche protection is managed externally.
STP80NF55-08	R_DS(on) = 8 mΩ @ 10 V, lower V_DS = 55 V, higher I_D = 80 A, T_j(max) = 175 °C, E_AS = 520 mJ.	Better suited for 24 V systems requiring higher current headroom but insufficient for 48 V bus applications due to voltage limit.	Choose only for ≤36 V input systems where lower R_DS(on) is not required and cost is primary constraint.

Compared with IRF1404PBF and STP80NF55-08, PSMN4R4-80BS offers superior conduction efficiency at 48 V, verified avalanche ruggedness, and tighter thermal resistance-making it optimal for high-density, high-reliability server and industrial power stages where both voltage margin and pulse energy handling are critical.

Availability

PSMN4R4-80BS is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, and high-current DC–DC converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN4R4-80BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion and motor control applications where thermal resilience and avalanche capability are essential.

FAQ

What is the maximum continuous drain current for PSMN4R4-80BS at 100 °C mounting base temperature?

At T_mb = 100 °C, the normalized continuous drain current drops to approximately 65 A, as shown in Figure 1 of the datasheet. This derating reflects thermal limitations of the D2PAK package and must be applied when heatsink temperature exceeds 25 °C to avoid exceeding R_th(j-mb) limits and ensure long-term reliability.

Can PSMN4R4-80BS be driven directly by a 5 V microcontroller GPIO?

No-its gate threshold voltage (2–4 V) allows partial turn-on, but full enhancement requires V_GS ≥ 10 V to achieve the rated 4.5 mΩ R_DS(on). Driving with 5 V results in R_DS(on) > 15 mΩ and excessive conduction loss; a dedicated gate driver or level shifter is mandatory for efficient operation.

Is the drain pin electrically connected to the mounting base?

Yes-pin 2 (drain) is internally connected to the exposed mounting base in the D2PAK package. When mounted to a heatsink, the drain becomes electrically tied to the heatsink potential; electrical isolation (e.g., mica washer or thermal pad with dielectric layer) is required unless the heatsink is grounded to the drain net.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At t_p = 100 µs, the SOA curve (Figure 3) limits drain current to ~300 A at V_DS = 20 V and ~100 A at V_DS = 40 V. These boundaries reflect both thermal and avalanche constraints; operation beyond them risks single-pulse failure even with adequate average power dissipation.

PSMN4R4-80BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8400 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN4R4-80BS,118 FAQ

1.How can I place an order for PSMN4R4-80BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R4-80BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R4-80BS,118 reliable?

The price and inventory of PSMN4R4-80BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R4-80BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN4R4-80BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R4-80BS,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R4-80BS,118?

PSMN4R4-80BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R4-80BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R4-80BS,118?

For technical support, including PSMN4R4-80BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R4-80BS,118 requirements.

6.How does Aetrix verify that PSMN4R4-80BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN4R4-80BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R4-80BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN4R4-80BS,118?

All PSMN4R4-80BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R4-80BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R4-80BS,118 part is unused and in its original packaging.

Return procedure for PSMN4R4-80BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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