Nexperia USA Inc. PSMN4R4-80PS,127

Overview

PSMN4R4-80PS from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 80 V V_DS, 4.1 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, with 100 A continuous drain current capability and 306 W total power dissipation at T_mb = 25 °C - deployed in server power supplies and high-current DC-DC converters.

For engineers reviewing the PSMN4R4-80PS datasheet, PSMN4R4-80PS pinout, PSMN4R4-80PS application, or PSMN4R4-80PS equivalent, key selection criteria include its 0.23 K/W typical junction-to-mounting-base thermal resistance, 125 nC total gate charge at V_DS = 40 V, and suitability for standard 10 V gate drive without level-shifting circuitry.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low conduction loss and stable threshold voltage across temperature. Its gate-source threshold voltage ranges from 2–4 V at 25 °C and remains ≥1 V up to 175 °C junction temperature, enabling robust turn-on under thermal stress.

The device features a fully rated 80 V drain-source breakdown voltage at -55 °C to 175 °C, supports unclamped inductive switching with 591 mJ non-repetitive avalanche energy, and integrates a source-drain diode with 59 ns reverse recovery time and 130 nC recovered charge - critical for synchronous rectification and motor control freewheeling.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted base and one mounting hole; 3-lead configuration with isolated tab (drain-connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and STP80NF55-08, PSMN4R4-80PS delivers optimal balance of 80 V rating, ultra-low R_DS(on), and moderate gate charge - making it uniquely suited for next-generation 48 V datacenter power architectures where voltage headroom and efficiency are co-constrained.

Availability

PSMN4R4-80PS is available at Aetrix Electronics and suitable for server power supplies, DC-DC converters, and motor control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN4R4-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.

This device belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in computing, communications, and industrial power conversion.

FAQ

Is PSMN4R4-80PS suitable for high-frequency switching above 1 MHz?

No - its 125 nC total gate charge and 39 nC gate-source charge result in significant switching losses above 500 kHz. It is optimized for 100–500 kHz operation in server VRMs and telecom PSUs, where conduction loss dominates. For >1 MHz designs, consider Nexperia's NextPower series with lower Q_G.

Does the TO-220AB package require electrical isolation when mounted to a heatsink?

Yes - Pin 2 (Drain) is internally connected to the metal mounting base. If the heatsink is grounded or at a different potential, an insulating washer and shoulder washer must be used to prevent short circuits. Thermal interface material must maintain dielectric integrity at ≥80 V working voltage.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_mb = 100 °C, the SOA curve limits continuous I_D to ≈55 A at V_DS = 10 V and ≈12 A at V_DS = 40 V (per Figure 3). This reflects thermal derating due to reduced R_th(j-mb) effectiveness and must be verified with actual board-level thermal modeling.

Can PSMN4R4-80PS replace a logic-level MOSFET in 5 V gate drive circuits?

No - its V_GS(th) minimum is 2 V, but guaranteed turn-on requires ≥10 V for full R_DS(on) specification. At 5 V gate drive, R_DS(on) rises sharply (>20 mΩ), increasing conduction loss beyond acceptable limits. Use logic-level alternatives like PSMN2R0-30YL for 5 V systems.