Nexperia USA Inc. PSMN4R5-30YLC,115

Overview

PSMN4R5-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, designed for high-efficiency power switching in industrial and communications equipment. It delivers 30 V V_DS, 4.8 mΩ R_DS(on) at V_GS = 10 V and 20 A, ultra-low Q_G (9.6 nC @ 4.5 V), and 175 °C junction-rated operation - enabling robust load switching and synchronous rectification in compact DC-DC converters.

For engineers reviewing the PSMN4R5-30YLC datasheet, PSMN4R5-30YLC pinout, PSMN4R5-30YLC application, or PSMN4R5-30YLC equivalent, this device is selected for low-voltage, high-current switching where gate drive at 4.5 V is required, thermal performance under mounting-base-limited conditions matters, and avalanche ruggedness (14.5 mJ) supports unclamped inductive turn-off.

Technical Context

This MOSFET uses Nexperia's NextPower Superjunction technology to optimize conduction and switching losses simultaneously. Its R_DS(on) remains stable across T_j = 25–150 °C (max 11 mΩ @ 150 °C, V_GS = 4.5 V), and its low C_iss (1324 pF) and C_rss (97 pF) support fast, controllable switching with minimal Miller-induced oscillation.

The device features an integrated source-drain diode with V_SD = 0.8–1.1 V @ 20 A and t_rr = 29.8 ns, making it suitable for synchronous rectifier topologies requiring fast reverse recovery. Its mounting-base thermal path (R_th(j-mb) = 2.26 K/W typ.) enables direct PCB copper heatsinking without discrete thermal pads.

Key Specifications

Pinout & Package

LFPAK (SOT669) is a 4-lead plastic single-ended surface-mounted package with exposed mounting base connected to drain. Optimized for high-power density and low-inductance PCB layout, it integrates thermal and electrical performance in a footprint comparable to SO-8 but with superior thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLHS6342TRPBF and DMTH3004LPSQ-13, PSMN4R5-30YLC uniquely combines 175 °C junction rating, LFPAK's low R_th(j-mb), and sub-10 nC Q_G - making it optimal for thermally constrained, high-reliability industrial power stages where both conduction and switching losses must be minimized.

Availability

PSMN4R5-30YLC is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and industrial load switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN4R5-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, high-reliability discrete and logic devices for power management, signal integrity, and interface applications.

This part belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial, computing, and communications infrastructure where thermal resilience and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 10 V, the maximum continuous drain current is 60 A per the Limiting Values table. This reflects thermal derating due to reduced heat transfer efficiency at elevated mounting temperatures, and aligns with the normalized power dissipation curve in Figure 2.

Does PSMN4R5-30YLC have avalanche capability, and how is it specified?

Yes - it is rated for non-repetitive drain-source avalanche energy of 14.5 mJ at T_j(init) = 25 °C, I_D = 84 A, V_sup ≤ 30 V, and R_GS = 50 Ω (unclamped condition). This value is measured per JEDEC JESD22-A117 and supports robustness against inductive switching faults without external protection.

Can this MOSFET be used with 3.3 V logic-level gate drive?

No - while V_GS(th) starts at 1.05 V, full enhancement requires ≥4.5 V for low R_DS(on). At V_GS = 3.3 V, R_DS(on) rises significantly (>15 mΩ), increasing conduction loss beyond acceptable limits. It is validated for 4.5 V and 5 V gate drive only.

How is thermal performance affected when the mounting base is not soldered to a large copper area?

R_th(j-mb) = 2.26 K/W assumes optimal thermal connection to a ≥100 mm² 2 oz copper pad. Without that, effective R_th(j-a) degrades rapidly - e.g., on 10 mm² pad, junction temperature may rise >40 °C higher at 30 W, risking thermal runaway. Thermal vias and solder mask defined pads are strongly recommended.